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STH7NA90FI

Description
N - CHANNEL 900V - 1.05ohm - 7A - TO-247/ISOWATT218 FAST POWER MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size101KB,9 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Download Datasheet Parametric Compare View All

STH7NA90FI Overview

N - CHANNEL 900V - 1.05ohm - 7A - TO-247/ISOWATT218 FAST POWER MOSFET

STH7NA90FI Parametric

Parameter NameAttribute value
MakerSTMicroelectronics
Parts packaging codeTO-218
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codecompli
Avalanche Energy Efficiency Rating (Eas)700 mJ
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage900 V
Maximum drain current (ID)4.7 A
Maximum drain-source on-resistance1.3 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-218
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)30 A
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
®
STW7NA90
STH7NA90FI
N - CHANNEL 900V - 1.05Ω - 7A - TO-247/ISOWATT218
FAST POWER MOSFET
TYPE
STW 7NA90
STH7NA90F I
s
s
s
s
s
s
s
V
DSS
900 V
900 V
R
DS(on)
< 1.3
<
1.3
I
D
7 A
4.7 A
TYPICAL R
DS(on)
= 1.05
±
30V GATE TO SOURCE VOLTAGE RATING
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100
o
C
LOW INTRINSIC CAPACITANCE
GATE CHARGE MINIMIZED
REDUCED VOLTAGE SPREAD
TO-247
1
2
3
2
1
3
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITCH MODE POWER SUPPLY (SMPS)
s
CONSUMER AND INDUSTRIAL LIGHTING
s
DC-AC CONVERTER FOR WELDING
EQUIPMENT AND UNINTERRUPTABLE
POWER SUPPLY (UPS)
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(•)
P
tot
V
ISO
T
s tg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
G ate-source Voltage
Drain Current (continuous) at T
c
= 25 C
Drain Current (continuous) at T
c
= 100 C
Drain Current (pulsed)
T otal Dissipation at T
c
= 25
o
C
Derating Factor
Insulation W ithstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
o
o
Value
ST W7NA90
STH7NA90F I
900
900
±
30
7
4
30
190
1.52
−−−−−−
-65 to 150
150
4.7
3
30
70
0.56
4000
Un it
V
V
V
A
A
A
W
W /
o
C
V
o
o
C
C
(•) Pulse width limited by safe operating area
October 1998
1/9

STH7NA90FI Related Products

STH7NA90FI STW7NA90FI STW7NA90
Description N - CHANNEL 900V - 1.05ohm - 7A - TO-247/ISOWATT218 FAST POWER MOSFET N - CHANNEL 900V - 1.05ohm - 7A - TO-247/ISOWATT218 FAST POWER MOSFET N - CHANNEL 900V - 1.05ohm - 7A - TO-247/ISOWATT218 FAST POWER MOSFET
Maker STMicroelectronics STMicroelectronics STMicroelectronics
Reach Compliance Code compli _compli _compli
Configuration SINGLE WITH BUILT-IN DIODE Single SINGLE WITH BUILT-IN DIODE
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C 150 °C
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
surface mount NO NO NO
Parts packaging code TO-218 - TO-247
package instruction FLANGE MOUNT, R-PSFM-T3 - TO-247, 3 PIN
Contacts 3 - 3
Avalanche Energy Efficiency Rating (Eas) 700 mJ - 700 mJ
Shell connection ISOLATED - ISOLATED
Minimum drain-source breakdown voltage 900 V - 900 V
Maximum drain current (ID) 4.7 A - 7 A
Maximum drain-source on-resistance 1.3 Ω - 1.3 Ω
JEDEC-95 code TO-218 - TO-247
JESD-30 code R-PSFM-T3 - R-PSFM-T3
Number of components 1 - 1
Number of terminals 3 - 3
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR
Package form FLANGE MOUNT - FLANGE MOUNT
Maximum pulsed drain current (IDM) 30 A - 30 A
Certification status Not Qualified - Not Qualified
Terminal form THROUGH-HOLE - THROUGH-HOLE
Terminal location SINGLE - SINGLE
transistor applications SWITCHING - SWITCHING
Transistor component materials SILICON - SILICON
Is it Rohs certified? - incompatible incompatible
Maximum drain current (Abs) (ID) - 4.7 A 7 A
JESD-609 code - e0 e0
Maximum power dissipation(Abs) - 70 W 190 W
Terminal surface - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
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