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BCR135L3

Description
100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size490KB,10 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric Compare View All

BCR135L3 Overview

100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR

BCR135L3 Parametric

Parameter NameAttribute value
MakerInfineon
package instructionTSLP-3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresBUILT-IN BIAS RESISTOR RATIO IS 4.7
Shell connectionCOLLECTOR
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)70
JESD-30 codeR-XBCC-N3
Number of components1
Number of terminals3
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formCHIP CARRIER
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.25 W
Certification statusNot Qualified
surface mountYES
Terminal formNO LEAD
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
BCR135.../SEMH9
NPN Silicon Digital Transistor
Switching circuit, inverter, interface circuit
driver circuit
Built in bias resistor (R
1
=10kΩ,
R
2
=47kΩ)
For 6-PIN packages: two (galvanic) internal
isolated transistors with good matching
in one package
BCR135/F/L3
BCR135T/W
C
3
BCR135S
SEMH9
C1
6
B2
5
E2
4
R
1
R
1
R
2
TR2
R
1
R
2
TR1
R
2
1
B
2
E
EHA07184
1
E1
2
B1
3
C2
EHA07174
Type
BCR135
BCR135F
BCR135L3
BCR135S
BCR135T
BCR135W
SEMH9
Marking
WJs
WJs
WJ
WJs
WJs
WJs
WJ
1=B
1=B
1=B
1=B
1=B
Pin Configuration
2=E
2=E
2=E
2=E
2=E
3=C
3=C
3=C
3=C
3=C
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Package
SOT23
TSFP-3
TSLP-3-4
SC75
SOT323
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666
1
May-17-2004

BCR135L3 Related Products

BCR135L3 BCR135T BCR135F
Description 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Maker Infineon Infineon Infineon
package instruction TSLP-3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-F3
Contacts 3 3 3
Reach Compliance Code compli unknow unknow
ECCN code EAR99 EAR99 EAR99
Other features BUILT-IN BIAS RESISTOR RATIO IS 4.7 BUILT-IN BIAS RESISTOR RATIO IS 4.7 BUILT-IN BIAS RESISTOR RATIO IS 4.7
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A
Collector-emitter maximum voltage 50 V 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 70 70 70
JESD-30 code R-XBCC-N3 R-PDSO-G3 R-PDSO-F3
Number of components 1 1 1
Number of terminals 3 3 3
Package body material UNSPECIFIED PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form CHIP CARRIER SMALL OUTLINE SMALL OUTLINE
Polarity/channel type NPN NPN NPN
Maximum power dissipation(Abs) 0.25 W 0.25 W 0.25 W
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES YES
Terminal form NO LEAD GULL WING FLAT
Terminal location BOTTOM DUAL DUAL
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 150 MHz 150 MHz 150 MHz
Is it Rohs certified? - conform to conform to
Is Samacsys - N N
Humidity sensitivity level - 1 1
Peak Reflow Temperature (Celsius) - NOT SPECIFIED NOT SPECIFIED
Maximum time at peak reflow temperature - NOT SPECIFIED NOT SPECIFIED
Base Number Matches - 1 1
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