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BCR135T

Description
100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size490KB,10 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

BCR135T Overview

100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR

BCR135T Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInfineon
Parts packaging codeSC-75
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Is SamacsysN
Other featuresBUILT-IN BIAS RESISTOR RATIO IS 4.7
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)70
JESD-30 codeR-PDSO-G3
Humidity sensitivity level1
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.25 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
Base Number Matches1
BCR135.../SEMH9
NPN Silicon Digital Transistor
Switching circuit, inverter, interface circuit
driver circuit
Built in bias resistor (R
1
=10kΩ,
R
2
=47kΩ)
For 6-PIN packages: two (galvanic) internal
isolated transistors with good matching
in one package
BCR135/F/L3
BCR135T/W
C
3
BCR135S
SEMH9
C1
6
B2
5
E2
4
R
1
R
1
R
2
TR2
R
1
R
2
TR1
R
2
1
B
2
E
EHA07184
1
E1
2
B1
3
C2
EHA07174
Type
BCR135
BCR135F
BCR135L3
BCR135S
BCR135T
BCR135W
SEMH9
Marking
WJs
WJs
WJ
WJs
WJs
WJs
WJ
1=B
1=B
1=B
1=B
1=B
Pin Configuration
2=E
2=E
2=E
2=E
2=E
3=C
3=C
3=C
3=C
3=C
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Package
SOT23
TSFP-3
TSLP-3-4
SC75
SOT323
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666
1
May-17-2004

BCR135T Related Products

BCR135T BCR135L3 BCR135F
Description 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Maker Infineon Infineon Infineon
package instruction SMALL OUTLINE, R-PDSO-G3 TSLP-3 SMALL OUTLINE, R-PDSO-F3
Contacts 3 3 3
Reach Compliance Code unknow compli unknow
ECCN code EAR99 EAR99 EAR99
Other features BUILT-IN BIAS RESISTOR RATIO IS 4.7 BUILT-IN BIAS RESISTOR RATIO IS 4.7 BUILT-IN BIAS RESISTOR RATIO IS 4.7
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A
Collector-emitter maximum voltage 50 V 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 70 70 70
JESD-30 code R-PDSO-G3 R-XBCC-N3 R-PDSO-F3
Number of components 1 1 1
Number of terminals 3 3 3
Package body material PLASTIC/EPOXY UNSPECIFIED PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE CHIP CARRIER SMALL OUTLINE
Polarity/channel type NPN NPN NPN
Maximum power dissipation(Abs) 0.25 W 0.25 W 0.25 W
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES YES
Terminal form GULL WING NO LEAD FLAT
Terminal location DUAL BOTTOM DUAL
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 150 MHz 150 MHz 150 MHz
Is it Rohs certified? conform to - conform to
Is Samacsys N - N
Humidity sensitivity level 1 - 1
Peak Reflow Temperature (Celsius) NOT SPECIFIED - NOT SPECIFIED
Maximum time at peak reflow temperature NOT SPECIFIED - NOT SPECIFIED
Base Number Matches 1 - 1
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