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STD3NK60ZFP

Description
2.4 A, 600 V, 3.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Categorysemiconductor    Discrete semiconductor   
File Size915KB,34 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Download Datasheet Parametric Compare View All

STD3NK60ZFP Overview

2.4 A, 600 V, 3.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

STD3NK60ZFP Parametric

Parameter NameAttribute value
Number of terminals3
Minimum breakdown voltage600 V
Processing package descriptionTO-220, 3 PIN
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRectangle
Package SizeFlange mounting
Terminal formTHROUGH-hole
terminal coatingtin
Terminal locationsingle
Packaging MaterialsPlastic/Epoxy
structureSingle WITH BUILT-IN diode
Number of components1
transistor applicationsswitch
Transistor component materialssilicon
Channel typeN channel
field effect transistor technologyMetal-OXIDE SEMICONDUCTOR
operating modeENHANCEMENT
Transistor typeuniversal power supply
Maximum leakage current2.4 A
Rated avalanche energy150 mJ
Maximum drain on-resistance3.6 ohm
Maximum leakage current pulse9.6 A
STB3NK60ZT4, STD3NK60Z-1, STD3NK60ZT4
STP3NK60Z, STP3NK60ZFP
Datasheet
N-channel 600 V, 3.2 Ω typ., 2.4 A SuperMESH™ Power MOSFETs in
D²PAK, IPAK, DPAK, TO-220 and TO-220FP packages
TAB
TAB
3
Features
1
2
1
D
2
PAK
TAB
3
TAB
2 3
1
Order codes
STB3NK60ZT4
STD3NK60Z-1
STD3NK60ZT4
V
DS
R
DS(on)
max.
I
D
Package
D
2
PAK
IPAK
IPAK
DPAK
3
1
2
600 V
3.6 Ω
2.4 A
DPAK
TO-220
TO-220FP
1
TO-220
2
3
STP3NK60Z
STP3NK60ZFP
TO-220FP
D(2, TAB)
G(1)
Extremely high dv/dt capability
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitance
Zener-protected
Applications
S(3)
AM01475V1
Switching applications
Description
Product status link
STB3NK60ZT4
STD3NK60Z-1
STD3NK60ZT4
STP3NK60Z
STP3NK60ZFP
These high-voltage devices are Zener-protected N-channel Power MOSFETs
developed using the SuperMESH™ technology by STMicroelectronics, an
optimization of the well-established PowerMESH™. In addition to a significant
reduction in on-resistance, these devices are designed to ensure a high level of dv/dt
capability for the most demanding applications.
DS2912
-
Rev 6
-
August 2018
For further information contact your local STMicroelectronics sales office.
www.st.com

STD3NK60ZFP Related Products

STD3NK60ZFP STD3NK60Z STB3NK60Z
Description 2.4 A, 600 V, 3.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 2.4 A, 600 V, 3.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 2.4 A, 600 V, 3.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Number of terminals 3 3 2
Terminal form THROUGH-hole THROUGH-hole GULL WING
Terminal location single single SINGLE
Number of components 1 1 1
transistor applications switch switch SWITCHING
Transistor component materials silicon silicon SILICON
Minimum breakdown voltage 600 V 600 V -
Processing package description TO-220, 3 PIN TO-220, 3 PIN -
Lead-free Yes Yes -
EU RoHS regulations Yes Yes -
state ACTIVE ACTIVE -
packaging shape Rectangle Rectangle -
Package Size Flange mounting Flange mounting -
terminal coating tin tin -
Packaging Materials Plastic/Epoxy Plastic/Epoxy -
structure Single WITH BUILT-IN diode Single WITH BUILT-IN diode -
Channel type N channel N channel -
field effect transistor technology Metal-OXIDE SEMICONDUCTOR Metal-OXIDE SEMICONDUCTOR -
operating mode ENHANCEMENT ENHANCEMENT -
Transistor type universal power supply universal power supply -
Maximum leakage current 2.4 A 2.4 A -
Rated avalanche energy 150 mJ 150 mJ -
Maximum drain on-resistance 3.6 ohm 3.6 ohm -
Maximum leakage current pulse 9.6 A 9.6 A -
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