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STD17N05L

Description
N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size158KB,10 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance
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STD17N05L Overview

N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR

STD17N05L Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerSTMicroelectronics
Parts packaging codeTO-252AA
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts3
Reach Compliance Code_compli
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)60 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage50 V
Maximum drain current (Abs) (ID)17 A
Maximum drain current (ID)17 A
Maximum drain-source on-resistance0.085 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-252AA
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)55 W
Maximum pulsed drain current (IDM)68 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
STD17N05L
STD17N06L
N - CHANNEL ENHANCEMENT MODE
LOW THRESHOLD POWER MOS TRANSISTOR
TYPE
STD17N05L
STD17N06L
s
s
s
s
s
s
s
s
V
DSS
50 V
60 V
R
DS( on)
< 0.085
< 0.085
I
D
17 A
17 A
s
s
TYPICAL R
DS(on)
= 0.065
AVALANCHE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100
o
C
LOW GATE CHARGE
LOGIC LEVEL COMPATIBLE INPUT
175
o
C OPERATING TEMPERATURE
APPLICATION ORIENTED
CHARACTERIZATION
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX ”-1”)
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX ”T4”)
3
1
IPAK
TO-251
(Suffix ”-1”)
2
1
DPAK
TO-252
3
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SOLENOID AND RELAY DRIVERS
s
REGULATORS
s
DC-DC & DC-AC CONVERTERS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
STD17N05L
V
D S
V
DG R
V
GS
I
D
I
D
I
D M
(•)
P
tot
T
stg
T
j
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25 C
Derating Factor
Storage Temperature
Max. Operating Junction Temperature
o
Value
STD17N06L
60
60
±
15
17
12
68
55
0.37
-65 to 175
175
Unit
50
50
V
V
V
A
A
A
W
W/
o
C
o
o
C
C
(•) Pulse width limited by safe operating area
January 1995
1/10

STD17N05L Related Products

STD17N05L STD17N06L
Description N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR
Is it Rohs certified? conform to incompatible
Maker STMicroelectronics STMicroelectronics
Parts packaging code TO-252AA TO-252AA
package instruction SMALL OUTLINE, R-PSSO-G2 TO-252, DPAK-3
Contacts 3 3
Reach Compliance Code _compli _compli
ECCN code EAR99 EAR99
Avalanche Energy Efficiency Rating (Eas) 60 mJ 60 mJ
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 50 V 60 V
Maximum drain current (Abs) (ID) 17 A 17 A
Maximum drain current (ID) 17 A 17 A
Maximum drain-source on-resistance 0.085 Ω 0.085 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-252AA TO-252AA
JESD-30 code R-PSSO-G2 R-PSSO-G2
JESD-609 code e3 e0
Number of components 1 1
Number of terminals 2 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 175 °C 175 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 55 W 55 W
Maximum pulsed drain current (IDM) 68 A 68 A
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface Matte Tin (Sn) Tin/Lead (Sn/Pb)
Terminal form GULL WING GULL WING
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
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