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STB6NC80Z

Description
N-CHANNEL 800V - 1.5ohm - 5.4A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH⑩III MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size376KB,13 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance
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STB6NC80Z Overview

N-CHANNEL 800V - 1.5ohm - 5.4A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH⑩III MOSFET

STB6NC80Z Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSTMicroelectronics
Parts packaging codeD2PAK
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts4
Reach Compliance Code_compli
Is SamacsysN
Avalanche Energy Efficiency Rating (Eas)237 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage800 V
Maximum drain current (Abs) (ID)5.4 A
Maximum drain current (ID)5.4 A
Maximum drain-source on-resistance1.8 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-263AB
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)125 W
Maximum pulsed drain current (IDM)21 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
STP6NC80Z - STP6NC80ZFP
STB6NC80Z - STB6NC80Z-1
N-CHANNEL 800V - 1.5Ω - 5.4A TO-220/FP/D²PAK/I²PAK
Zener-Protected PowerMESH™III MOSFET
TYPE
STP6NC80Z/FP
STB6NC80Z/-1
s
s
V
DSS
800V
800V
R
DS(on)
< 1.8
< 1.8
I
D
5.4 A
5.4 A
1
3
s
s
s
TYPICAL R
DS
(on) = 1.5
EXTREMELY HIGH dv/dt AND CAPABILITY
GATE-TO- SOURCE ZENER DIODES
100% AVALANCHE TESTED
VERY LOW GATE INPUT RESISTANCE
GATE CHARGE MINIMIZED
D²PAK
TO-220
3
1
2
TO-220FP
12
3
DESCRIPTION
The third generation of MESH OVERLAY™ Power
MOSFETs for very high voltage exhibits unsurpassed
on-resistance per unit area while integrating back-to-
back Zener diodes between gate and source. Such ar-
rangement gives extra ESD capability with higher rug-
gedness performance as requested by a large variety
of single-switch applications.
APPLICATIONS
SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
s
WELDING EQUIPMENT
s
I²PAK
(Tabless TO-220)
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(1)
P
TOT
I
GS
V
ESD(G-S)
dv/dt
V
ISO
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 kΩ)
Gate- source Voltage
Drain Current (continuous) at T
C
= 25°C
Drain Current (continuous) at T
C
= 100°C
Drain Current (pulsed)
Total Dissipation at T
C
= 25°C
Derating Factor
Gate-source Current (
q
)
Gate source ESD(HBM-C=100pF, R=15KΩ)
Peak Diode Recovery voltage slope
Insulation Winthstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
--
–65 to 150
150
5.4
3.4
21
125
1
±50
3
3
2000
Value
STP(B)6NC80Z(-1)
800
800
± 25
5.4(*)
3.4(*)
21(*)
40
0.32
STP6NC80ZFP
V
V
V
A
A
A
W
W/°C
mA
KV
V/ns
V
°C
°C
Unit
(•)Pulse width limited by safe operating area
December 2002
(1)I
SD
≤5.4A,
di/dt
≤100A/µs,
V
DD
V
(BR)DSS
, T
j
T
JMAX
.
(*)Pulse width Limited by maximum temperature allowed
1/13

STB6NC80Z Related Products

STB6NC80Z STP6NC80ZFP STP6NC80Z STB6NC80Z-1 STB6NC80 P6NC80
Description N-CHANNEL 800V - 1.5ohm - 5.4A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH⑩III MOSFET N-CHANNEL 800V - 1.5ohm - 5.4A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH⑩III MOSFET N-CHANNEL 800V - 1.5ohm - 5.4A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH⑩III MOSFET N-CHANNEL 800V - 1.5ohm - 5.4A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH⑩III MOSFET N-CHANNEL 800V - 1.5ohm - 5.4A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH⑩III MOSFET N-CHANNEL 800V - 1.5ohm - 5.4A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH⑩III MOSFET
Maker STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics - -
Parts packaging code D2PAK TO-220AB TO-220AB TO-262AA - -
package instruction SMALL OUTLINE, R-PSSO-G2 TO-220FP, 3 PIN TO-220, 3 PIN IN-LINE, R-PSIP-T3 - -
Contacts 4 3 3 3 - -
Reach Compliance Code _compli compli compli compli - -
Is Samacsys N N N N - -
Avalanche Energy Efficiency Rating (Eas) 237 mJ 237 mJ 237 mJ 237 mJ - -
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE - -
Minimum drain-source breakdown voltage 800 V 800 V 800 V 800 V - -
Maximum drain current (Abs) (ID) 5.4 A 5.4 A 5.1 A 5.1 A - -
Maximum drain current (ID) 5.4 A 5.4 A 5.4 A 5.4 A - -
Maximum drain-source on-resistance 1.8 Ω 1.8 Ω 1.8 Ω 1.8 Ω - -
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR - -
JEDEC-95 code TO-263AB TO-220AB TO-220AB TO-262AA - -
JESD-30 code R-PSSO-G2 R-PSFM-T3 R-PSFM-T3 R-PSIP-T3 - -
Number of components 1 1 1 1 - -
Number of terminals 2 3 3 3 - -
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE - -
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C - -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY - -
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR - -
Package form SMALL OUTLINE FLANGE MOUNT FLANGE MOUNT IN-LINE - -
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL - -
Maximum power dissipation(Abs) 125 W 40 W 125 W 125 W - -
Maximum pulsed drain current (IDM) 21 A 21 A 21 A 21 A - -
Certification status Not Qualified Not Qualified Not Qualified Not Qualified - -
surface mount YES NO NO NO - -
Terminal form GULL WING THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE - -
Terminal location SINGLE SINGLE SINGLE SINGLE - -
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING - -
Transistor component materials SILICON SILICON SILICON SILICON - -
Base Number Matches 1 1 1 1 - -
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