STB6NC80 datasheet, PDF - EEWORLD Datasheet

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STB6NC80: DescriptionN-CHANNEL 800V - 1.5ohm - 5.4A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH⑩III MOSFET; File Size376KB，13 Pages; ManufacturerSTMicroelectronics; Websitehttp://www.st.com/

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STB6NC80 Overview

N-CHANNEL 800V - 1.5ohm - 5.4A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH⑩III MOSFET

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STP6NC80Z - STP6NC80ZFP

STB6NC80Z - STB6NC80Z-1

N-CHANNEL 800V - 1.5Ω - 5.4A TO-220/FP/D²PAK/I²PAK

Zener-Protected PowerMESH™III MOSFET

TYPE

STP6NC80Z/FP

STB6NC80Z/-1

DSS

800V

DS(on)

< 1.8

Ω

< 1.8

Ω

5.4 A

TYPICAL R

(on) = 1.5

Ω

EXTREMELY HIGH dv/dt AND CAPABILITY

GATE-TO- SOURCE ZENER DIODES

100% AVALANCHE TESTED

VERY LOW GATE INPUT RESISTANCE

GATE CHARGE MINIMIZED

D²PAK

TO-220

TO-220FP

DESCRIPTION

The third generation of MESH OVERLAY™ Power

MOSFETs for very high voltage exhibits unsurpassed

on-resistance per unit area while integrating back-to-

back Zener diodes between gate and source. Such ar-

rangement gives extra ESD capability with higher rug-

gedness performance as requested by a large variety

of single-switch applications.

APPLICATIONS

SINGLE-ENDED SMPS IN MONITORS,

COMPUTER AND INDUSTRIAL APPLICATION

WELDING EQUIPMENT

I²PAK

(Tabless TO-220)

ABSOLUTE MAXIMUM RATINGS

Symbol

DGR

(1)

TOT

ESD(G-S)

dv/dt

ISO

stg

Parameter

Drain-source Voltage (V

= 0)

Drain-gate Voltage (R

= 20 kΩ)

Gate- source Voltage

Drain Current (continuous) at T

= 25°C

Drain Current (continuous) at T

= 100°C

Drain Current (pulsed)

Total Dissipation at T

= 25°C

Derating Factor

Gate-source Current (

)

Gate source ESD(HBM-C=100pF, R=15KΩ)

Peak Diode Recovery voltage slope

Insulation Winthstand Voltage (DC)

Storage Temperature

Max. Operating Junction Temperature

–65 to 150

150

5.4

3.4

125

±50

2000

Value

STP(B)6NC80Z(-1)

800

± 25

5.4(*)

3.4(*)

21(*)

0.32

STP6NC80ZFP

W/°C

V/ns

°C

Unit

(•)Pulse width limited by safe operating area

December 2002

(1)I

≤5.4A,

di/dt

≤100A/µs,

≤

(BR)DSS

, T

≤

JMAX

(*)Pulse width Limited by maximum temperature allowed

1/13

STB6NC80 Related Products

	STB6NC80	STP6NC80ZFP	STP6NC80Z	STB6NC80Z	STB6NC80Z-1	P6NC80
Description	N-CHANNEL 800V - 1.5ohm - 5.4A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH⑩III MOSFET	N-CHANNEL 800V - 1.5ohm - 5.4A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH⑩III MOSFET	N-CHANNEL 800V - 1.5ohm - 5.4A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH⑩III MOSFET	N-CHANNEL 800V - 1.5ohm - 5.4A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH⑩III MOSFET	N-CHANNEL 800V - 1.5ohm - 5.4A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH⑩III MOSFET	N-CHANNEL 800V - 1.5ohm - 5.4A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH⑩III MOSFET
Maker	-	STMicroelectronics	STMicroelectronics	STMicroelectronics	STMicroelectronics	-
Parts packaging code	-	TO-220AB	TO-220AB	D2PAK	TO-262AA	-
package instruction	-	TO-220FP, 3 PIN	TO-220, 3 PIN	SMALL OUTLINE, R-PSSO-G2	IN-LINE, R-PSIP-T3	-
Contacts	-	3	3	4	3	-
Reach Compliance Code	-	compli	compli	_compli	compli	-
Is Samacsys	-	N	N	N	N	-
Avalanche Energy Efficiency Rating (Eas)	-	237 mJ	237 mJ	237 mJ	237 mJ	-
Configuration	-	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	-
Minimum drain-source breakdown voltage	-	800 V	800 V	800 V	800 V	-
Maximum drain current (Abs) (ID)	-	5.4 A	5.1 A	5.4 A	5.1 A	-
Maximum drain current (ID)	-	5.4 A	5.4 A	5.4 A	5.4 A	-
Maximum drain-source on-resistance	-	1.8 Ω	1.8 Ω	1.8 Ω	1.8 Ω	-
FET technology	-	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	-
JEDEC-95 code	-	TO-220AB	TO-220AB	TO-263AB	TO-262AA	-
JESD-30 code	-	R-PSFM-T3	R-PSFM-T3	R-PSSO-G2	R-PSIP-T3	-
Number of components	-	1	1	1	1	-
Number of terminals	-	3	3	2	3	-
Operating mode	-	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	-
Maximum operating temperature	-	150 °C	150 °C	150 °C	150 °C	-
Package body material	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-
Package shape	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	-
Package form	-	FLANGE MOUNT	FLANGE MOUNT	SMALL OUTLINE	IN-LINE	-
Polarity/channel type	-	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	-
Maximum power dissipation(Abs)	-	40 W	125 W	125 W	125 W	-
Maximum pulsed drain current (IDM)	-	21 A	21 A	21 A	21 A	-
Certification status	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	-
surface mount	-	NO	NO	YES	NO	-
Terminal form	-	THROUGH-HOLE	THROUGH-HOLE	GULL WING	THROUGH-HOLE	-
Terminal location	-	SINGLE	SINGLE	SINGLE	SINGLE	-
transistor applications	-	SWITCHING	SWITCHING	SWITCHING	SWITCHING	-
Transistor component materials	-	SILICON	SILICON	SILICON	SILICON	-
Base Number Matches	-	1	1	1	1	-

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