STB5NC90Z datasheet, PDF - EEWORLD Datasheet

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STB5NC90Z: DescriptionN-CHANNEL 900V - 2.1ohm - 4.6A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH⑩III MOSFET; CategoryDiscrete semiconductor The transistor; File Size382KB，13 Pages; ManufacturerSTMicroelectronics; Websitehttp://www.st.com/; Environmental Compliance

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STB5NC90Z Overview

N-CHANNEL 900V - 2.1ohm - 4.6A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH⑩III MOSFET

STB5NC90Z Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	STMicroelectronics
Parts packaging code	D2PAK
package instruction	SMALL OUTLINE, R-PSSO-G2
Contacts	3
Reach Compliance Code	_compli
Avalanche Energy Efficiency Rating (Eas)	220 mJ
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	900 V
Maximum drain current (Abs) (ID)	4.6 A
Maximum drain current (ID)	4.6 A
Maximum drain-source on-resistance	2.5 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-263AB
JESD-30 code	R-PSSO-G2
JESD-609 code	e3
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	125 W
Maximum pulsed drain current (IDM)	18 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON

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STP5NC90Z - STP5NC90ZFP

STB5NC90Z - STB5NC90Z-1

N-CHANNEL 900V - 2.1Ω - 4.6A TO-220/FP/D²PAK/I²PAK

Zener-Protected PowerMESH™III MOSFET

TYPE

STP5NC90Z/FP

STB5NC90Z/-1

DSS

900V

DS(on)

< 2.5Ω

4.6 A

TYPICAL R

(on) = 2.1Ω

EXTREMELY HIGH dv/dt AND CAPABILITY GATE

TO - SOURCE ZENER DIODES

100% AVALANCHE TESTED

VERY LOW GATE INPUT RESISTANCE

GATE CHARGE MINIMIZED

D²PAK

TO-220

TO-220FP

DESCRIPTION

The third generation of MESH OVERLAY™ Power

MOSFETs for very high voltage exhibits unsurpassed

on-resistance per unit area while integrating back-to-

back Zener diodes between gate and source. Such ar-

rangement gives extra ESD capability with higher rug-

gedness performance as requested by a large variety

of single-switch applications.

APPLICATIONS

SINGLE-ENDED SMPS IN MONITORS,

COMPUTER AND INDUSTRIAL APPLICATION

WELDING EQUIPMENT

I²PAK

(Tabless TO-220)

ABSOLUTE MAXIMUM RATINGS

Symbol

DGR

(

)

TOT

ESD(G-S)

dv/dt

ISO

stg

Parameter

Drain-source Voltage (V

= 0)

Drain-gate Voltage (R

= 20 kΩ)

Gate- source Voltage

Drain Current (continuous) at T

= 25°C

Drain Current (continuous) at T

= 100°C

Drain Current (pulsed)

Total Dissipation at T

= 25°C

Derating Factor

Gate-source Current (*)

Gate source ESD(HBM-C=100pF, R=15KΩ)

Peak Diode Recovery voltage slope

Insulation Winthstand Voltage (DC)

Storage Temperature

Max. Operating Junction Temperature

–65 to 150

150

4.6

2.9

125

±50

2000

Value

STP(B)5NC90Z(-1)

900

± 25

4.6(*)

2.9(*)

0.32

STP5NC90ZFP

W/°C

V/ns

°C

Unit

(•)Pulse width limited by safe operating area

December 2002

(1)I

≤4.6A,

di/dt

≤100A/µs,

≤

(BR)DSS

, T

≤

JMAX

(*)

Limited only by maximum temperature allowed

1/13

STB5NC90Z Related Products

	STB5NC90Z	STP5NC90Z	STP5NC90ZFP	STB5NC90Z-1
Description	N-CHANNEL 900V - 2.1ohm - 4.6A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH⑩III MOSFET	N-CHANNEL 900V - 2.1ohm - 4.6A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH⑩III MOSFET	N-CHANNEL 900V - 2.1ohm - 4.6A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH⑩III MOSFET	N-CHANNEL 900V - 2.1ohm - 4.6A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH⑩III MOSFET
Maker	STMicroelectronics	STMicroelectronics	STMicroelectronics	STMicroelectronics
Parts packaging code	D2PAK	SFM	TO-220AB	TO-262AA
package instruction	SMALL OUTLINE, R-PSSO-G2	TO-220, 3 PIN	TO-220FP, 3 PIN	IN-LINE, R-PSIP-T3
Contacts	3	3	3	3
Reach Compliance Code	_compli	_compli	_compli	compli
Avalanche Energy Efficiency Rating (Eas)	220 mJ	220 mJ	220 mJ	220 mJ
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	900 V	900 V	900 V	900 V
Maximum drain current (Abs) (ID)	4.6 A	4.6 A	4.6 A	4.6 A
Maximum drain current (ID)	4.6 A	4.6 A	4.6 A	4.6 A
Maximum drain-source on-resistance	2.5 Ω	2.5 Ω	2.5 Ω	2.5 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-263AB	TO-220	TO-220AB	TO-262AA
JESD-30 code	R-PSSO-G2	R-PSFM-T3	R-PSFM-T3	R-PSIP-T3
Number of components	1	1	1	1
Number of terminals	2	3	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	FLANGE MOUNT	FLANGE MOUNT	IN-LINE
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	125 W	125 W	40 W	125 W
Maximum pulsed drain current (IDM)	18 A	18 A	18 A	18 A
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	NO	NO	NO
Terminal form	GULL WING	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Is it Rohs certified?	conform to	conform to	incompatible	-
JESD-609 code	e3	e3	e0	-
Terminal surface	Matte Tin (Sn)	Matte Tin (Sn)	Tin/Lead (Sn/Pb)	-

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