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STP5NC90Z

Description
N-CHANNEL 900V - 2.1ohm - 4.6A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH⑩III MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size382KB,13 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance
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STP5NC90Z Overview

N-CHANNEL 900V - 2.1ohm - 4.6A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH⑩III MOSFET

STP5NC90Z Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSTMicroelectronics
Parts packaging codeSFM
package instructionTO-220, 3 PIN
Contacts3
Reach Compliance Code_compli
Avalanche Energy Efficiency Rating (Eas)220 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage900 V
Maximum drain current (Abs) (ID)4.6 A
Maximum drain current (ID)4.6 A
Maximum drain-source on-resistance2.5 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)125 W
Maximum pulsed drain current (IDM)18 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
STP5NC90Z - STP5NC90ZFP
STB5NC90Z - STB5NC90Z-1
N-CHANNEL 900V - 2.1Ω - 4.6A TO-220/FP/D²PAK/I²PAK
Zener-Protected PowerMESH™III MOSFET
TYPE
STP5NC90Z/FP
STB5NC90Z/-1
s
s
V
DSS
900V
900V
R
DS(on)
< 2.5Ω
< 2.5Ω
I
D
4.6 A
4.6 A
1
3
s
s
s
TYPICAL R
DS
(on) = 2.1Ω
EXTREMELY HIGH dv/dt AND CAPABILITY GATE
TO - SOURCE ZENER DIODES
100% AVALANCHE TESTED
VERY LOW GATE INPUT RESISTANCE
GATE CHARGE MINIMIZED
D²PAK
TO-220
3
1
2
TO-220FP
12
3
DESCRIPTION
The third generation of MESH OVERLAY™ Power
MOSFETs for very high voltage exhibits unsurpassed
on-resistance per unit area while integrating back-to-
back Zener diodes between gate and source. Such ar-
rangement gives extra ESD capability with higher rug-
gedness performance as requested by a large variety
of single-switch applications.
APPLICATIONS
SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
s
WELDING EQUIPMENT
s
I²PAK
(Tabless TO-220)
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
q
)
P
TOT
I
GS
V
ESD(G-S)
dv/dt
V
ISO
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 kΩ)
Gate- source Voltage
Drain Current (continuous) at T
C
= 25°C
Drain Current (continuous) at T
C
= 100°C
Drain Current (pulsed)
Total Dissipation at T
C
= 25°C
Derating Factor
Gate-source Current (*)
Gate source ESD(HBM-C=100pF, R=15KΩ)
Peak Diode Recovery voltage slope
Insulation Winthstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
--
–65 to 150
150
4.6
2.9
18
125
1
±50
3
3
2000
Value
STP(B)5NC90Z(-1)
900
900
± 25
4.6(*)
2.9(*)
18
40
0.32
STP5NC90ZFP
V
V
V
A
A
A
W
W/°C
mA
KV
V/ns
V
°C
°C
Unit
(•)Pulse width limited by safe operating area
December 2002
(1)I
SD
≤4.6A,
di/dt
≤100A/µs,
V
DD
V
(BR)DSS
, T
j
T
JMAX
(*)
.
Limited only by maximum temperature allowed
1/13

STP5NC90Z Related Products

STP5NC90Z STP5NC90ZFP STB5NC90Z-1 STB5NC90Z
Description N-CHANNEL 900V - 2.1ohm - 4.6A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH⑩III MOSFET N-CHANNEL 900V - 2.1ohm - 4.6A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH⑩III MOSFET N-CHANNEL 900V - 2.1ohm - 4.6A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH⑩III MOSFET N-CHANNEL 900V - 2.1ohm - 4.6A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH⑩III MOSFET
Maker STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Parts packaging code SFM TO-220AB TO-262AA D2PAK
package instruction TO-220, 3 PIN TO-220FP, 3 PIN IN-LINE, R-PSIP-T3 SMALL OUTLINE, R-PSSO-G2
Contacts 3 3 3 3
Reach Compliance Code _compli _compli compli _compli
Avalanche Energy Efficiency Rating (Eas) 220 mJ 220 mJ 220 mJ 220 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 900 V 900 V 900 V 900 V
Maximum drain current (Abs) (ID) 4.6 A 4.6 A 4.6 A 4.6 A
Maximum drain current (ID) 4.6 A 4.6 A 4.6 A 4.6 A
Maximum drain-source on-resistance 2.5 Ω 2.5 Ω 2.5 Ω 2.5 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-220 TO-220AB TO-262AA TO-263AB
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSIP-T3 R-PSSO-G2
Number of components 1 1 1 1
Number of terminals 3 3 3 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT IN-LINE SMALL OUTLINE
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 125 W 40 W 125 W 125 W
Maximum pulsed drain current (IDM) 18 A 18 A 18 A 18 A
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO YES
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE GULL WING
Terminal location SINGLE SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
Is it Rohs certified? conform to incompatible - conform to
JESD-609 code e3 e0 - e3
Terminal surface Matte Tin (Sn) Tin/Lead (Sn/Pb) - Matte Tin (Sn)
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