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BCR3KM

Description
LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE
CategoryAnalog mixed-signal IC    Trigger device   
File Size55KB,5 Pages
ManufacturerMitsubishi
Websitehttp://www.mitsubishielectric.com/semiconductors/
Download Datasheet Parametric Compare View All

BCR3KM Overview

LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE

BCR3KM Parametric

Parameter NameAttribute value
Parts packaging codeTO-220FN
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknow
Other featuresUL RECOGNIZED
Shell connectionISOLATED
ConfigurationSINGLE
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Certification statusNot Qualified
Maximum rms on-state current3 A
Off-state repetitive peak voltage600 V
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Trigger device typeTRIAC
Base Number Matches1
MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR3KM
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR3KM
OUTLINE DRAWING
10
±
0.3
6.5
±
0.3
3
±
0.3
Dimensions in mm
2.8
±
0.2
15
±
0.3
φ
3.2
±
0.2
14
±
0.5
3.6
±
0.3
1.1
±
0.2
1.1
±
0.2
0.75
±
0.15
E
0.75
±
0.15
2.54
±
0.25
2.54
±
0.25
4.5
±
0.2
ŒŽ
2.6
±
0.2
V
Measurement point of
case temperature

.................................................................. 3A
q
V
DRM
...................................................... 400V / 600V
q
I
FGT
!
, I
RGT
!
, I
RGT
#
................... 15mA (10mA)
V2
q
I
T (RMS)
q
UL
Œ
Œ
T
1
TERMINAL

T
2
TERMINAL
Ž Ž
GATE TERMINAL
Recognized : File No. E80271
TO-220FN
APPLICATION
Control of heater such as electric rice cooker, electric pot
MAXIMUM RATINGS
Symbol
V
DRM
V
DSM
Parameter
Repetitive peak off-state voltage
V1
Non-repetitive peak off-state
voltage
V1
Voltage class
8
400
500
12
600
720
Unit
V
V
Symbol
I
T (RMS)
I
TSM
I
2t
P
GM
P
G (AV)
V
GM
I
GM
T
j
T
stg
V
iso
Parameter
RMS on-state current
Surge on-state current
I
2t
for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Weight
Isolation voltage
Conditions
Commercial frequency, sine full wave 360° conduction, Tc=111°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Ratings
3
30
3.7
3
0.3
6
0.5
–40 ~ +125
–40 ~ +125
2.0
Unit
A
A
A
2
s
W
W
V
A
°C
°C
g
V
Feb.1999
T
a
=25°C, AC 1 minute, T
1
· T
2
· G terminal to case
2000
V1.
Gate open.

BCR3KM Related Products

BCR3KM BCR3KM-12
Description LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknow unknown
Other features UL RECOGNIZED UL RECOGNIZED
Shell connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
JESD-30 code R-PSFM-T3 R-PSFM-T3
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 125 °C 125 °C
Minimum operating temperature -40 °C -40 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Certification status Not Qualified Not Qualified
Maximum rms on-state current 3 A 3 A
Off-state repetitive peak voltage 600 V 600 V
surface mount NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
Trigger device type TRIAC TRIAC
Base Number Matches 1 1

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