MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR3KM
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR3KM
OUTLINE DRAWING
10
±
0.3
6.5
±
0.3
3
±
0.3
Dimensions in mm
2.8
±
0.2
15
±
0.3
φ
3.2
±
0.2
14
±
0.5
3.6
±
0.3
1.1
±
0.2
1.1
±
0.2
0.75
±
0.15
E
0.75
±
0.15
2.54
±
0.25
2.54
±
0.25
4.5
±
0.2
2.6
±
0.2
V
Measurement point of
case temperature
.................................................................. 3A
q
V
DRM
...................................................... 400V / 600V
q
I
FGT
!
, I
RGT
!
, I
RGT
#
................... 15mA (10mA)
V2
q
I
T (RMS)
q
UL
T
1
TERMINAL
T
2
TERMINAL
GATE TERMINAL
Recognized : File No. E80271
TO-220FN
APPLICATION
Control of heater such as electric rice cooker, electric pot
MAXIMUM RATINGS
Symbol
V
DRM
V
DSM
Parameter
Repetitive peak off-state voltage
V1
Non-repetitive peak off-state
voltage
V1
Voltage class
8
400
500
12
600
720
Unit
V
V
Symbol
I
T (RMS)
I
TSM
I
2t
P
GM
P
G (AV)
V
GM
I
GM
T
j
T
stg
—
V
iso
Parameter
RMS on-state current
Surge on-state current
I
2t
for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Weight
Isolation voltage
Conditions
Commercial frequency, sine full wave 360° conduction, Tc=111°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Ratings
3
30
3.7
3
0.3
6
0.5
–40 ~ +125
–40 ~ +125
2.0
Unit
A
A
A
2
s
W
W
V
A
°C
°C
g
V
Feb.1999
T
a
=25°C, AC 1 minute, T
1
· T
2
· G terminal to case
2000
V1.
Gate open.
MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR3KM
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Symbol
I
DRM
V
TM
V
FGT
!
V
RGT
!
V
RGT
#
I
FGT
!
I
RGT
!
I
RGT
#
V
GD
R
th (j-c)
R
th (j-a)
Parameter
Repetitive peak off-state current
On-state voltage
!
Test conditions
T
j
=125°C, V
DRM
applied
T
c
=25°C, I
TM
=4.5A, Instantaneous measurement
Limits
Min.
—
—
—
—
—
—
—
—
0.2
—
—
Typ.
—
—
—
—
—
—
—
—
—
—
—
Max.
2.0
1.5
1.5
1.5
1.5
15
V2
15
V2
15
V2
—
4.0
50
Unit
mA
V
V
V
V
mA
mA
mA
V
°C/
W
°C/
W
Gate trigger voltage
V2
@
#
!
T
j
=25°C, V
D
=6V, R
L
=6Ω, R
G
=330Ω
Gate trigger
current
V2
@
#
T
j
=25°C, V
D
=6V, R
L
=6Ω, R
G
=330Ω
T
j
=125°C, V
D
=1/2V
DRM
Junction to
case
V3
Junction to ambient
Gate non-trigger voltage
Thermal resistance
Thermal resistance
V2.
High sensitivity (I
GT
≤
10mA) is also available. (I
GT
item
)
V3.
The contact thermal resistance R
th (c-f)
in case of greasing is 0.5°C/W.
PERFORMANCE CURVES
MAXIMUM ON-STATE
CHARACTERISTICS
RATED SURGE ON-STATE
CURRENT
40
SURGE ON-STATE CURRENT (A)
ON-STATE CURRENT (A)
10
2
7
5
3
2
10
1
7
5
3
2
T
C
= 25°C
35
30
25
20
15
10
5
0
10
0
2 3 4 5 7 10
1
2 3 4 5 7 10
2
10
0
7
5
3
2
10
–1
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8
ON-STATE VOLTAGE (V)
CONDUCTION TIME
(CYCLES AT 60Hz)
Feb.1999
MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR3KM
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
10
2
7
5
3
2
100 (%)
GATE CHARACTERISTICS
(Ι,
ΙΙ
AND
ΙΙΙ)
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
10
3
7
5
4
3
2
10
2
7
5
4
3
2
TYPICAL EXAMPLE
GATE TRIGGER CURRENT (T
j
= t°C)
GATE TRIGGER CURRENT (T
j
= 25°C)
GATE VOLTAGE (V)
10
1
7
5
3
V
GT
2
P
GM
= 3W
I
GM
=
0.5A
I
RGT III
P
G(AV)
= 0.3W
I
FGT I
,
I
RGT I
10
0
7
5
3
2
I
RGT I
I
FGM I
,
I
RGM III
V
GD
= 0.2V
10
–1 0
10
2 3 5 7
10
1
2 3 5 7
10
2
2 3 5 7
10
3
GATE CURRENT (mA)
10
1
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)
100 (%)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
10
3
7
5
4
3
2
10
2
7
5
4
3
2
10
1
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
TYPICAL EXAMPLE
TRANSIENT THERMAL IMPEDANCE (°C/W)
10
2
2 3 5 7 10
3
2 3 5 7
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
10
–1
2 3 5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
CONDUCTION TIME
(CYCLES AT 60Hz)
GATE TRIGGER VOLTAGE (T
j
= t°C)
GATE TRIGGER VOLTAGE (T
j
= 25°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO AMBIENT)
TRANSIENT THERMAL IMPEDANCE (°C/W)
7
5
4
3
2
MAXIMUM ON-STATE POWER
DISSIPATION
ON-STATE POWER DISSIPATION (W)
10
2
5.0
4.5
4.0 360°
3.5 CONDUCTION
RESISTIVE,
3.0 INDUCTIVE
2.5 LOADS
2.0
1.5
1.0
0.5
0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
RMS ON-STATE CURRENT (A)
10
1
7
5
4
3
2
10
0 2
10
2 3 5 7
10
3
2 3 5 7
10
4
2 3 5 7
10
5
CONDUCTION TIME
(CYCLES AT 60Hz)
Feb.1999
MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR3KM
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
130
110 CURVES APPLY
REGARDLESS
100 OF CONDUCTION
90 ANGLE
80
70
60 360°
CONDUCTION
50 RESISTIVE,
40 INDUCTIVE
LOADS
30
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
RMS ON-STATE CURRENT (A)
AMBIENT TEMPERATURE (°C)
120
CASE TEMPERATURE (°C)
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
160
ALL FINS ARE BLACK PAINTED
ALUMINUM AND GREASED
140
120
100
80
60
40
20
0
0
1
2
3
CURVES APPLY
REGARDLESS OF
CONDUCTION ANGLE
RESISTIVE,
INDUCTIVE LOADS
NATURAL CONVECTION
120 120 t2.3
100 100 t2.3
60 60 t2.3
4
5
6
7
8
RMS ON-STATE CURRENT (A)
REPETITIVE PEAK OFF-STATE CURRENT (T
j
= t°C)
REPETITIVE PEAK OFF-STATE CURRENT (T
j
= 25°C)
AMBIENT TEMPERATURE (°C)
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
160
NATURAL CONVECTION
NO FINS
140
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
120
RESISTIVE, INDUCTIVE LOADS
100
80
60
40
20
0
0
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
RMS ON-STATE CURRENT (A)
REPETITIVE PEAK OFF-STATE
CURRENT VS. JUNCTION
TEMPERATURE
10
5
7
5
3
2
100 (%)
TYPICAL EXAMPLE
10
4
7
5
3
2
10
3
7
5
3
2
10
2
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
100 (%)
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
10
3
7
5
4
3
2
LACHING CURRENT VS.
JUNCTION TEMPERATURE
10
3
7
5
3
2
TYPICAL EXAMPLE
HOLDING CURRENT (T
j
= t°C)
HOLDING CURRENT (T
j
= 25°C)
10
2
7
5
3
2
10
2
7
5
4
3
2
10
1
7
5
10
1
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
T
2
, G EXAMPLE
10
0
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
3
+
+
2
T
2
, G
–
TYPICAL
–
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
LACHING CURRENT (mA)
DISTRIBUTION
+
T
2
, G
–
TYPICAL
EXAMPLE
Feb.1999
MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR3KM
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
100 (%)
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
100 (%)
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE
160
140
TYPICAL EXAMPLE
T
j
= 125°C
160
140
TYPICAL EXAMPLE
BREAKOVER VOLTAGE (dv/dt = xV/µs )
BREAKOVER VOLTAGE (dv/dt = 1V/µs )
BREAKOVER VOLTAGE (T
j
= t°C)
BREAKOVER VOLTAGE (T
j
= 25°C)
120
100
80
60
40
20
0
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
120
100
80
III QUADRANT
60
40
20
0
10
1
2 3 5 7
10
2
2 3 5 7
10
3
2 3 5 7
10
4
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
I QUADRANT
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
100 (%)
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS
6Ω
6Ω
10
3
7
5
4
3
2
I
RGT III
I
RGT I
TYPICAL EXAMPLE
GATE TRIGGER CURRENT (tw)
GATE TRIGGER CURRENT (DC)
I
FGT I
6V
V
A
R
G
6V
V
A
R
G
10
2
7
5
4
3
2
TEST PROCEDURE
6Ω
TEST PROCEDURE
6V
A
V
R
G
10
1
10
0
2
3 4 5 7
10
1
2
3 4 5 7
10
2
GATE CURRENT PULSE WIDTH (µs)
TEST PROCEDURE
Feb.1999
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