N-CHANNEL 20V - 0.0026
Ω
- 120A D
²
PAK/I
²
PAK/TO-220
STripFET™ II POWER MOSFET
TYPE
STB210NF02/-1
STP210NF02
s
s
s
STP210NF02
STB210NF02 STB210NF02-1
AUTOMOTIVE SPECIFIC
V
DSS
20 V
20 V
R
DS(on)
<0.0032
Ω
<0.0032
Ω
I
D
120 A
(**)
120 A
(**)
3
1
TYPICAL R
DS
(on) = 0.0026Ω
STANDARD THRESHOLD DRIVE
100% AVALANCHE TESTED
3
12
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™" strip-
based process. The resulting transistor shows extremely
high packing density for low on-resistance, rugged
avalanche characteristics and less critical alignment
steps
therefore
a
remarkable
manufacturing
reproducibility.
D
²
PAK
TO-263
I
²
PAK
TO-262
3
1
2
TO-220
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SOLENOID AND RELAY DRIVERS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
DC-DC & DC-AC CONVERTERS
INTERNAL SCHEMATIC DIAGRAM
Ordering Information
SALES TYPE
STB210NF02
STB210NF02T4
STP210NF02
STB210NF02-1
MARKING
B210NF02
B210NF02
P210NF02
B210NF02
PACKAGE
D
2
PAK
D
2
PAK
TO-220
I
2
PAK
PACKAGING
TUBE
TAPE & REEL
TUBE
TUBE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V
DS
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 kΩ)
V
DGR
V
GS
Gate- source Voltage
Drain Current (continuous) at T
C
= 25°C
I
D
(**)
Drain Current (continuous) at T
C
= 100°C
I
D
I
DM
(•)
Drain Current (pulsed)
P
tot
Total Dissipation at T
C
= 25°C
Derating Factor
(1)
Peak Diode Recovery voltage slope
dv/dt
E
AS (2)
Single Pulse Avalanche Energy
T
stg
Storage Temperature
T
j
Operating Junction Temperature
(•)
Pulse width limited by safe operating area.
(**) Current Limited by Package
Value
20
20
± 20
120
120
480
300
2.0
1
2.3
-55 to 175
Unit
V
V
V
A
A
A
W
W/°C
V/ns
J
°C
(1) I
SD
≤120A,
di/dt
≤250A/µs,
V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
(2) Starting T
j
= 25
o
C, I
D
= 60 A, V
DD
= 14 V
October 2002
.
1/14
STB210NF02/-1 STP210NF02
THERMAL DATA
Rthj-case
Rthj-amb
Rthj-pcb
T
l
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Junction-pcb
Maximum Lead Temperature For Soldering Purpose
(for 10 sec. 1.6 mm from case)
Max
Max
Max
Typ
0.5
62.5
see curve on page 6
300
°C/W
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS
(T
case
= 25 °C unless otherwise specified)
OFF
Symbol
V
(BR)DSS
I
DSS
Parameter
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
Gate-body Leakage
Current (V
DS
= 0)
Test Conditions
I
D
= 250 µA
V
GS
= 0
Min.
20
1
10
±100
Typ.
Max.
Unit
V
µA
µA
nA
V
DS
= Max Rating
V
DS
= Max Rating T
C
= 125°C
V
GS
= ± 20V
I
GSS
ON
(*)
Symbol
V
GS(th)
R
DS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
V
DS
= V
GS
V
GS
= 10 V
I
D
= 250 µA
I
D
= 50 A
Min.
2
2.6
Typ.
Max.
4
3.2
Unit
V
mΩ
DYNAMIC
Symbol
g
fs (*)
C
iss
C
oss
C
rss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
V
DS =
10 V
I
D
= 50 A
Min.
Typ.
130
5100
3500
800
Max.
Unit
S
pF
pF
pF
V
DS
= 15V, f = 1 MHz, V
GS
= 0
2/14
STB210NF02/-1 STP210NF02
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol
t
d(on)
t
r
Q
g
Q
gs
Q
gd
Parameter
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
I
D
= 60 A
V
DD
= 10 V
R
G
= 4.7
Ω
V
GS
= 10 V
(Resistive Load, Figure 3)
V
DD
=10V I
D
=120A V
GS
=10V
Min.
Typ.
35
360
125
40
50
150
Max.
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbol
t
d(off)
t
f
Parameter
Turn-off Delay Time
Fall Time
Test Conditions
I
D
= 60 A
V
DD
= 10 V
R
G
= 4.7Ω,
V
GS
= 10 V
(Resistive Load, Figure 3)
Min.
Typ.
75
110
Max.
Unit
ns
ns
SOURCE DRAIN DIODE
Symbol
I
SD
I
SDM (•)
V
SD (*)
t
rr
Q
rr
I
RRM
Parameter
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 120 A
V
GS
= 0
70
120
3.5
Test Conditions
Min.
Typ.
Max.
120
480
1.3
Unit
A
A
V
ns
nC
A
di/dt = 100A/µs
I
SD
= 120 A
V
DD
= 15 V
T
j
= 150°C
(see test circuit, Figure 5)
(*)
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(
•)
Pulse width limited by safe operating area.
Safe Operating Area
Thermal Impedance
3/14
STB210NF02/-1 STP210NF02
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
4/14
STB210NF02/-1 STP210NF02
Normalized Gate Threshold Voltage vs Temperature
Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Breakdown Voltage vs Temperature.
Power Derating vs Tc
.
Max Id Current vs Tc
.
5/14
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