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STB16NS25

Description
N-CHANNEL 250V - 0.23ohm - 16A D2PAK MESH OVERLAY⑩ MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size332KB,9 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance
Download Datasheet Parametric View All

STB16NS25 Overview

N-CHANNEL 250V - 0.23ohm - 16A D2PAK MESH OVERLAY⑩ MOSFET

STB16NS25 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts3
Reach Compliance Code_compli
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)200 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage250 V
Maximum drain current (Abs) (ID)16 A
Maximum drain current (ID)16 A
Maximum drain-source on-resistance0.28 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)140 W
Maximum pulsed drain current (IDM)64 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
STB16NS25
N-CHANNEL 250V - 0.23Ω - 16A D
2
PAK
MESH OVERLAY™ MOSFET
TYPE
STB16NS25
s
s
s
V
DSS
250 V
R
DS(on)
< 0.28
I
D
16 A
TYPICAL R
DS
(on) = 0.23
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
1
3
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performance. The new patented STrip layout cou-
pled with the Company’s proprietary edge termina-
tion structure, makes it suitable in coverters for
lighting applications.
D
2
PAK
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITH MODE POWER SUPPLIES (SMPS)
s
DC-DC CONVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
( )
P
TOT
dv/dt (1)
T
stg
T
j
February 2003
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 kΩ)
Gate- source Voltage
Drain Current (continuos) at T
C
= 25°C
Drain Current (continuos) at T
C
= 100°C
Drain Current (pulsed)
Total Dissipation at T
C
= 25°C
Derating Factor
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
Value
250
250
± 20
16
11
64
140
1
5
–65 to 175
175
(1) I
SD
16A, di/dt≤300 A/µs, V
DD
V
(BR)DSS
, Tj≤T
jMAX
Unit
V
V
V
A
A
A
W
W/°C
V/ns
°C
°C
1/9
(•)Pulse width limited by safe operating area
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