HSMS-280x
Surface Mount RF Schottky Barrier Diodes
Data Sheet
Description/Applications
These Schottky diodes are specifically designed for both
analog and digital applications. This series offers a wide
range of specifications and package configurations to
give the designer wide flexibility. The HSMS-280x series
of diodes is optimized for high voltage applications.
Note that Avago’s manufacturing techniques assure that
dice found in pairs and quads are taken from adjacent sites
on the wafer, assuring the highest degree of match.
Features
x
Surface Mount Packages
x
High Breakdown Voltage
x
Low FIT (Failure in Time) Rate*
x
Six-sigma Quality Level
x
Single, Dual and Quad Versions
x
Tape and Reel Options Available
x
Lead-free
*
For more information see the Surface Mount Schottky Reliability
Data Sheet.
Package Lead Code Identification, SOT-323 (Top View)
SINGLE
SERIES
Package Lead Code Identification, SOT-363 (Top View)
HIGH ISOLATION
UNCONNECTED PAIR
6
5
4
UNCONNECTED
TRIO
6
5
4
B
COMMON
ANODE
C
COMMON
CATHODE
1
2
K
3
1
2
L
3
COMMON
CATHODE QUAD
6
5
4
6
COMMON
ANODE QUAD
5
4
E
F
1
2
M
3
1
2
N
3
6
BRIDGE
QUAD
5
4
6
RING
QUAD
5
4
Package Lead Code Identification, SOT-23/SOT-143 (Top View)
SINGLE
3
SERIES
3
COMMON
ANODE
3
COMMON
CATHODE
3
1
2
P
3
1
2
R
3
1
#0
2
1
#2
2
1
#3
2
1
#4
2
UNCONNECTED
PAIR
3
4
BRIDGE
QUAD
3
4
1
#5
2
1
#8
2
Pin Connections and Package Marking, SOT-363
1
2
3
6
5
4
Notes:
1. Package marking provides orientation and identification.
2. See “Electrical Specifications” for appropriate package marking.
ESD WARNING:
Handling Precautions Should Be Taken To Avoid Static Discharge.
Absolute Maximum Ratings
[1]
T
C
= 25°C
Symbol
I
f
P
IV
T
j
T
stg
T
jc
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to the device.
2. T
C
= +25°C, where T
C
is defined to be the temperature at the package pins where contact is made to the circuit board.
Electrical Specifications T
A
= 25°C, Single Diode
[3]
Part
Number
HSMS
[4]
2800
2802
2803
2804
2805
2808
280B
280C
280E
280F
280K
280L
280M
280N
280P
280R
Package
Marking
Code
A0
A2
A3
A4
A5
A8
A0
A2
A3
A4
AK
AL
H
N
AP
O
Lead
Code
0
2
3
4
5
8
B
C
E
F
K
L
M
N
P
R
Minimum
Breakdown
Voltage
V
BR
(V)
Maximum
Forward
Voltage
V
F
(mV)
Maximum
Forward
Voltage
V
F
(V) @ I
F
(mA)
Maximum
Reverse
Leakage
I
R
(nA) @ V
R
(V)
Maximum
Capacitance
C
T
(pF)
Typical
Dynamic
Resistance
R
D
(Ω)
[5]
Test Conditions
Notes:
1. DV
F
for diodes in pairs and quads in 15 mV maximum at 1 mA.
2. DC
TO
for diodes in pairs and quads is 0.2 pF maximum.
3. Effective Carrier Lifetime (t) for all these diodes is 100 ps maximum measured with Krakauer method at 5 mA.
4. See section titled “Quad Capacitance.”
5. R
D
= R
S
+ 5.2 Ω at 25°C and I
f
= 5 mA.
GUx
Parameter
Forward Current (1 μs Pulse)
Peak Inverse Voltage
Junction Temperature
Storage Temperature
Thermal Resistance
[2]
Unit
Amp
V
°C
°C
°C/W
SOT-23/SOT-143
1
Same as V
BR
150
-65 to 150
500
SOT-323/SOT-363
1
Same as V
BR
150
-65 to 150
150
Configuration
Single
Series
Common Anode
Common Cathode
Unconnected Pair
Bridge Quad
[4]
Single
Series
Common Anode
Common Cathode
High Isolation
Unconnected Pair
Unconnected Trio
Common Cathode Quad
Common Anode Quad
Bridge Quad
Ring Quad
70
410
1.0 @ 15
200 @ 50
2.0
35
I
R
= 10 mA
I
F
= 1 mA
V
F
= 0 V
f = 1 MHz
I
F
= 5 mA
2
Quad Capacitance
Capacitance of Schottky diode quads is measured using
an HP4271 LCR meter. This instrument effectively isolates
individual diode branches from the others, allowing
accurate capacitance measurement of each branch or
each diode. The conditions are: 20 mV R.M.S. voltage at 1
MHz. Avago defines this measurement as “CM”, and it is
equivalent to the capacitance of the diode by itself. The
equivalent diagonal and adjacent capacitances can then
be calculated by the formulas given below.
In a quad, the diagonal capacitance is the capacitance
between points A and B as shown in the figure below.
The diagonal capacitance is calculated using the follow-
ing formula
C
1
x C
2
C
3
x C
C
DIAGONAL
= _______ + _______
4
C
1
+ C
2
C
3
+ C
4
C
1
C
C
2
C
4
C
3
A
B
The equivalent adjacent capacitance is the capacitance
between points A and C in the figure below. This capaci-
tance is calculated using the following formula
1
C
ADJACENT
= C
1
+ ____________
1 1
1
–– + –– + ––
C
2
C
3
C
4
This information does not apply to cross-over quad
diodes.
Linear Equivalent Circuit, Diode Chip
R
j
R
S
SPICE Parameters
Parameter
B
V
C
J0
E
G
I
BV
I
S
Units
V
pF
eV
A
A
Ω
V
HSMS-280x
75
1.6
0.69
E-5
3.00E-08
1.08
30
0.65
2
0.5
C
j
N
R
S
P
B
P
T
M
R
S
= series resistance (see Table of SPICE parameters)
C
j
= junction capacitance (see Table of SPICE parameters)
8.33 X 10
-5
nT
R
j
=
I
b
+ I
s
where
I
b
= externally applied bias current in amps
I
s
= saturation current (see table of SPICE parameters)
T = temperature, K
n = ideality factor (see table of SPICE parameters)
Note:
To effectively model the packaged HSMS-280x product,
please refer to Application Note AN1124.
3
Typical Performance, T
C
= 25°C (unless otherwise noted), Single Diode
100
100,000
1000
I
F
– FORWARD CURRENT (mA)
I
R
– REVERSE CURRENT (nA)
10
10,000
R
D
– DYNAMIC RESISTANCE ()
100
1000
1
100
0.1
0.01
0
T
A
= +125C
T
A
= +75C
T
A
= +25C
T
A
= –25C
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
V
F
– FORWARD VOLTAGE (V)
10
10
1
0
10
20
T
A
= +125C
T
A
= +75C
T
A
= +25C
30
40
50
1
0.1
1
10
100
V
R
– REVERSE VOLTAGE (V)
I
F
– FORWARD CURRENT (mA)
Figure 1. Forward Current vs. Forward Voltage
at Temperatures.
2
Figure 2. Reverse Current vs. Reverse Voltage
at Temperatures.
V
F
- FORWARD VOLTAGE DIFFERENCE (mV)
30
30
Figure 3. Dynamic Resistance vs. Forward
Current.
I
F
- FORWARD CURRENT (mA)
C
T
– CAPACITANCE (pF)
1.5
10
I
F
(Left Scale)
10
1
V
F
(Right Scale)
1
1
0.5
0
0
10
20
30
40
50
V
R
– REVERSE VOLTAGE (V)
0.3
0.2
0.4
0.6
0.8
1.0
1.2
0.3
1.4
V
F
- FORWARD VOLTAGE (V)
Figure 4. Total Capacitance vs. Reverse
Voltage.
Figure 5. Typical V
f
Match, Pairs and Quads.
4
Applications Information Introduction —
Product Selection
Avago’s family of Schottky products provides unique
solutions to many design problems.
The first step in choosing the right product is to select the
diode type. All of the products in the HSMS-280x family
use the same diode chip, and the same is true of the
HSMS-281x and HSMS-282x families. Each family has a dif-
ferent set of characteristics which can be compared most
easily by consulting the SPICE parameters in Table 1.
A review of these data shows that the HSMS-280x family
has the highest breakdown voltage, but at the expense of
a high value of series resistance (R
s
). In applications which
do not require high voltage the HSMS-282x family, with a
lower value of series resistance, will offer higher current
carrying capacity and better performance. The HSMS-281x
family is a hybrid Schottky (as is the HSMS-280x), offering
lower 1/f or flicker noise than the HSMS-282x family.
In general, the HSMS-282x family should be the designer’s
first choice, with the -280x family reserved for high voltage
applications and the HSMS-281x family for low flicker
noise applications.
0.026
0.079
0.039
0.022
Dimensions in inches
Figure 6. Recommended PCB Pad Layout for Avago’s SC70 3L/SOT-323
Products.
Assembly Instructions
SOT-363 PCB Footprint
A recommended PCB pad layout for the miniature SOT-
363 (SC-70, 6 lead) package is shown in Figure 7 (dimen-
sions are in inches). This layout provides ample allowance
for package placement by automated assembly equip-
ment without adding parasitics that could impair the
performance.
0.026
Assembly Instructions
SOT-323 PCB Footprint
A recommended PCB pad layout for the miniature SOT-
323 (SC-70) package is shown in Figure 6 (dimensions
are in inches). This layout provides ample allowance for
package placement by automated assembly equipment
without adding parasitics that could impair the perfor-
mance.
0.079
0.039
0.018
Dimensions in inches
Figure 7. Recommended PCB Pad Layout for Avago’s SC70 6L/SOT-363
Products.
Table 1. Typical SPICE Parameters
Parameter
B
V
C
J0
E
G
I
BV
I
S
N
R
S
P
B
(V
J
)
P
T
(XTI)
M
Ω
V
Units
V
pF
eV
A
A
HSMS-280x
75
1.6
0.69
1 E-5
3 E-8
1.08
30
0.65
2
0.5
HSMS-281x
25
1.1
0.69
1 E-5
4.8 E-9
1.08
10
0.65
2
0.5
HSMS-282x
15
0.7
0.69
1 E-4
2.2 E-8
1.08
6
0.65
2
0.5
5
Microcontroller MCU
京公网安备 11010802033920号
EEWORLD
