EEWORLDEEWORLDEEWORLD

Part Number

Search

HX6356-BNC

Description
32K x 8 STATIC RAM-SOI
File Size142KB,12 Pages
ManufacturerETC1
Download Datasheet View All

HX6356-BNC Overview

32K x 8 STATIC RAM-SOI

Aerospace Electronics
32K x 8 STATIC RAM—SOI
FEATURES
RADIATION
• Fabricated with RICMOS
IV Silicon on Insulator (SOI)
0.75
µm
Process (L
eff
= 0.6
µm)
• Total Dose Hardness through 1x10 rad(SiO
2
)
• Neutron Hardness through 1x10
14
cm
-2
• Typical Operating power < 15 mW/MHz
• Dynamic and Static Transient Upset Hardness
through 1x10
11
rad(Si)/s
• Dose Rate Survivability through 1x10
12
rad(Si)/s
• Soft Error Rate of <1x10
-10
upsets/bit-day
in Geosynchronous Orbit
• Latchup Free
• Asynchronous Operation
• CMOS or TTL Compatible I/O
• Single 5 V
±
10% Power Supply
6
HX6356
OTHER
• Listed On SMD# 5962-95845
• Fast Read/Write Cycle Times
17 ns (Typical)
25 ns (-55 to 125°C)
• Packaging Options
- 36-Lead CFP—Bottom Braze (0.630 in. x 0.650 in.)
- 36-Lead CFP—Top Braze (0.630 in. x 0.650 in.)
GENERAL DESCRIPTION
The 32K x 8 Radiation Hardened Static RAM is a high
performance 32,768 word x 8-bit static random access
memory with industry-standard functionality. It is fabricated
with Honeywell’s radiation hardened technology, and is
designed for use in systems operating in harsh, transient
radiation environments. The RAM operates over the full
military temperature range and requires only a single 5 V
±
10% power supply. The RAM is available with either TTL or
CMOS compatible I/O. Power consumption is typically less
than 15 mW/MHz in operation, and less than 5 mW when
de-selected. The RAM read operation is fully asynchro-
nous, with an associated typical access time of 14 ns at 5V.
Honeywell’s enhanced SOI RICMOS
IV (Radiation Insen-
sitive CMOS) technology is radiation hardened through the
use of advanced and proprietary design, layout and pro-
cess hardening techniques. The RICMOS
IV process is a
5-volt, SIMOX CMOS technology with a 150 Å gate oxide
and a minimum drawn feature size of 0.75
µm
(0.6
µm
effective gate length—L
eff
). Additional features include
tungsten via plugs, Honeywell’s proprietary SHARP pla-
narization process, and a lightly doped drain (LDD) struc-
ture for improved short channel reliability. A 7 transistor
(7T) memory cell is used for superior single event upset
hardening, while three layer metal power bussing and the
low collection volume SIMOX substrate provide improved
dose rate hardening.
How can I make my application stay on top when MediaPlayer is playing in full screen? I searched through previous posts but couldn't find a solution
The platform is an embedded platform compiled by wince. When using Mediaplayer for full-screen playback, I want to put my application on top. I used the API SetWindowPos(v_hWndMain, HWND_TOPMOST, 0, 0...
goout Embedded System
How to input xy coordinates for hole location in pads packaging
Now the company requires all to use PADS drawing board. I used to use Allegro. When I first started learning PADS, I found that I didn’t know how to input the XY coordinates for accurate positioning w...
ou513 PCB Design
MSP430 precise delay program in CCS development environment
MSP430 precise delay program in CCS development environment Below is the code analysis! If you have any questions, please continue to communicate! I will study the low power consumption problem later!...
灞波儿奔 Microcontroller MCU
CC3200 activity photos, I want to buy one too
Support the [url]https://bbs.eeworld.com.cn/huodong/TI_wireless20160602/index.php[/url] event. I don’t know how long it will take to ship. By the way, you can take out the books that were impulsively ...
cl17726 Wireless Connectivity
Does anyone know about the company OS?
Does anyone know about the company OS?...
Melinda123 Recruitment

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1811  2051  2353  1990  688  37  42  48  41  14 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号