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HZ36L2

Description
SILICON EPITAXIAL PLANER ZENER DIODES
File Size214KB,3 Pages
ManufacturerSEMTECH_ELEC
Websitehttp://www.semtech.net.cn
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HZ36L2 Overview

SILICON EPITAXIAL PLANER ZENER DIODES

HZ…L Series
SILICON EPITAXIAL PLANER ZENER DIODES
for low noise application
Features
• Diode noise level of this series is approximately
1/3 – 1/10 lower than the HZ series.
• Low leakage, low zener impedance and maximum
power dissipation of 400 mW are ideally suited for
stabilized power supply, etc.
• Wide spectrum from 5.2 V through 38 V of zener
voltage provide flexible application.
Max. 0.5
Min. 27.5
Max. 1.9
Black
Cathode Band
Black
Part No.
Black
"ST" Brand
XXX
ST
Max. 3.9
Min. 27.5
Glass Case DO-35
Dimensions in mm
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
P
d
T
j
T
S
Value
400
175
- 55 to + 175
Unit
mW
O
C
C
O
Characteristics at T
a
= 25
O
C
Type
HZ6LA1
HZ6LA2
HZ6LA3
HZ6LB1
HZ6LB2
HZ6LB3
HZ6LC1
HZ6LC2
HZ6LC3
HZ7LA1
HZ7LA2
HZ7LA3
HZ7LB1
HZ7LB2
HZ7LB3
HZ7LC1
HZ7LC2
HZ7LC3
HZ9LA1
HZ9LA2
HZ9LA3
HZ9LB1
HZ9LB2
HZ9LB3
HZ9LC1
HZ9LC2
HZ9LC3
Min.
5.2
5.3
5.4
5.5
5.6
5.7
5.8
6
6.1
6.3
6.4
6.6
6.7
6.9
7
7.2
7.3
7.5
7.7
7.9
8.1
8.3
8.5
8.7
8.9
9.1
9.3
Zener Voltage
V
Z
(V)
1)
Max.
5.5
5.6
5.7
5.8
5.9
6
6.1
6.3
6.4
6.6
6.7
6.9
7
7.2
7.3
7.6
7.7
7.9
8.1
8.3
8.5
8.7
8.9
9.1
9.3
9.5
9.7
Maximum Reverse Current
I
R
(µA)
V
R
(V)
Maximum Dynamic Resistance
r
d
(Ω)
l
Z
(mA)
150
0.5
I
Z
(mA)
0.5
1
2
80
0.5
60
0.5
0.5
1
3.5
60
0.5
0.5
1
6
60
0.5
SEMTECH ELECTRONICS LTD.
®
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 22/06/2007
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