EEWORLDEEWORLDEEWORLD

Part Number

Search

GS88118GT-11.5I

Description
Cache SRAM, 512KX18, 11.5ns, CMOS, PQFP100, TQFP-100
Categorystorage    storage   
File Size463KB,33 Pages
ManufacturerGSI Technology
Websitehttp://www.gsitechnology.com/
Environmental Compliance
Download Datasheet Parametric View All

GS88118GT-11.5I Overview

Cache SRAM, 512KX18, 11.5ns, CMOS, PQFP100, TQFP-100

GS88118GT-11.5I Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerGSI Technology
Parts packaging codeQFP
package instructionLQFP,
Contacts100
Reach Compliance Codecompliant
ECCN code3A991.B.2.A
Maximum access time11.5 ns
Other featuresFLOW-THROUGH OR PIPELINED ARCHITECTURE
JESD-30 codeR-PQFP-G100
JESD-609 codee3
length20 mm
memory density9437184 bit
Memory IC TypeCACHE SRAM
memory width18
Humidity sensitivity level3
Number of functions1
Number of terminals100
word count524288 words
character code512000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize512KX18
Package body materialPLASTIC/EPOXY
encapsulated codeLQFP
Package shapeRECTANGULAR
Package formFLATPACK, LOW PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum seat height1.6 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3.135 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfacePURE MATTE TIN
Terminal formGULL WING
Terminal pitch0.65 mm
Terminal locationQUAD
Maximum time at peak reflow temperatureNOT SPECIFIED
width14 mm
Preliminary
GS88118/36T-11/11.5/100/80/66
100-Pin TQFP
Commercial Temp
Industrial Temp
1.11 9/2000Features
• FT pin for user-configurable flow through or pipelined
operation
• Single Cycle Deselect (SCD) Operation
• IEEE 1149.1 JTAG-compatible Boundary Scan
• On-chip write parity checking; even or odd selectable
• 3.3 V +10%/–5% core power supply
• 2.5 V or 3.3 V I/O supply
• LBO pin for Linear or Interleaved Burst mode
• Internal input resistors on mode pins allow floating mode pins
• Default to Interleaved Pipeline mode
• Byte Write (BW) and/or Global Write (GW) operation
• Common data inputs and data outputs
• Clock Control, registered, address, data, and control
• Internal self-timed write cycle
• Automatic power-down for portable applications
• 100-lead TQFP package
-11
-11.5
-100
-80
-66
10 ns
10 ns 12.5 ns 15 ns
Pipeline tCycle 10 ns
4.0 ns 4.0 ns 4.0 ns 4.5 ns 5.0 ns
3-1-1-1
t
KQ
I
DD
225 mA 225 mA 225 mA 200 mA 185 mA
11 ns 11.5 ns 12 ns
14 ns
18 ns
Flow
t
KQ
Through tCycle 15 ns
15 ns
15 ns
15 ns
20 ns
2-1-1-1
I
DD
180 mA 180 mA 180 mA 175 mA 165 mA
512K x 18, 256K x 36 ByteSafe™
100 MHz–66 MHz
3.3 V V
DD
8Mb Sync Burst SRAMs
3.3 V and 2.5 V I/O
counter may be configured to count in either linear or
interleave order with the Linear Burst Order (LBO) input. The
Burst function need not be used. New addresses can be loaded
on every cycle with no degradation of chip performance.
Flow Through/Pipeline Reads
The function of the Data Output register can be controlled by
the user via the FT mode pin (Pin 14). Holding the FT mode
pin low places the RAM in Flow Through mode, causing
output data to bypass the Data Output Register. Holding FT
high places the RAM in Pipeline mode, activating the rising-
edge-triggered Data Output Register.
SCD Pipelined Reads
The GS88118//36T is a SCD (Single Cycle Deselect) pipelined
synchronous SRAM. DCD (Dual Cycle Deselect) versions are
also available. SCD SRAMs pipeline deselect commands one
stage less than read commands. SCD RAMs begin turning off
their outputs immediately after the deselect command has been
captured in the input registers.
Byte Write and Global Write
Byte write operation is performed by using Byte Write enable
(BW) input combined with one or more individual byte write
signals (Bx). In addition, Global Write (GW) is available for
writing all bytes at one time, regardless of the byte write
control inputs.
ByteSafe™ Parity Functions
The GS88118/36T features ByteSafe data security functions.
See detailed discussion following.
Functional Description
Applications
The GS88118//36T is a 9,437,184-bit high performance
synchronous SRAM with a 2-bit burst address counter.
Although of a type originally developed for Level 2 Cache
applications supporting high performance CPUs, the device
now finds application in synchronous SRAM applications,
ranging from DSP main store to networking chip set support.
Sleep Mode
Low power (Sleep mode) is attained through the assertion
(high) of the ZZ signal, or by stopping the clock (CK).
Memory data is retained during Sleep mode.
Core and Interface Voltages
The GS88118//36T operates on a 3.3 V power supply, and all
inputs/outputs are 3.3 V- and 2.5 V-compatible. Separate
output power (V
DDQ
) pins are used to decouple output noise
from the internal circuit.
Controls
Addresses, data I/Os, chip enables (E1, E2), address burst
control inputs (ADSP, ADSC, ADV) and write control inputs
(Bx, BW, GW) are synchronous and are controlled by a
positive-edge-triggered clock input (CK). Output enable (G)
and power down control (ZZ) are asynchronous inputs. Burst
cycles can be initiated with either ADSP or ADSC inputs. In
Burst mode, subsequent burst addresses are generated
internally and are controlled by ADV. The burst address
Rev: 1.11 9/2000
1/33
© 2000, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2011  1323  918  1452  2451  41  27  19  30  50 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号