HB526C464EN-10IN datasheet, PDF

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HB526C464EN-10IN: DescriptionSynchronous DRAM Module, 4MX64, 9ns, CMOS, 133.37 X 2.92 MM, 31.75 MM HEIGHT, 1.27 MM PITCH, DIMM-168; Categorystorage storage; File Size542KB，59 Pages; ManufacturerHitachi （Renesas ）; Websitehttp://www.renesas.com/eng/

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HB526C464EN-10IN Overview

Synchronous DRAM Module, 4MX64, 9ns, CMOS, 133.37 X 2.92 MM, 31.75 MM HEIGHT, 1.27 MM PITCH, DIMM-168

HB526C464EN-10IN Parametric

Parameter Name	Attribute value
Maker	Hitachi （Renesas ）
Parts packaging code	DIMM
package instruction	DIMM, DIMM168
Contacts	168
Reach Compliance Code	unknown
ECCN code	EAR99
access mode	FOUR BANK PAGE BURST
Maximum access time	9 ns
Maximum clock frequency (fCLK)	66 MHz
I/O type	COMMON
JESD-30 code	R-XDMA-N168
memory density	268435456 bit
Memory IC Type	SYNCHRONOUS DRAM MODULE
memory width	64
Number of functions	1
Number of ports	1
Number of terminals	168
word count	4194304 words
character code	4000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	65 °C
Minimum operating temperature
organize	4MX64
Output characteristics	3-STATE
Package body material	UNSPECIFIED
encapsulated code	DIMM
Encapsulate equivalent code	DIMM168
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
power supply	3.3 V
Certification status	Not Qualified
refresh cycle	4096
Maximum seat height	31.75 mm
Maximum standby current	0.032 A
Maximum slew rate	1.08 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal pitch	1.27 mm
Terminal location	DUAL

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HB526C264EN-10IN,

HB526C464EN-10IN

1,048,576-word

64-bit

2-bank Synchronous Dynamic RAM

Module

1,048,576-word

64-bit

4-bank Synchronous Dynamic RAM

Module

ADE-203-737B (Z)

Rev. 2.0

Mar. 14, 1997

Description

The HB526C264EN, HB526C464EN belong to 8-byte DIMM (Dual In-line Memory Module) family,

and have been developed as an optimized main memory solution for 8-byte processor applications. The

HB526C264EN is a 1M

2-bank Synchronous Dynamic RAM Module, mounted 8 pieces of 16-

Mbit SDRAM (HM5216805TT) sealed in TSOP package and 1 piece of serial EEPROM (24C02) for

Presence Detect (PD). The HB526C464EN is a 1M

4-bank Synchronous Dynamic RAM Module,

mounted 16 pieces of 16-Mbit SDRAM (HM5216805TT) sealed in TSOP package and 1 piece of serial

EEPROM (24C02) for Presence Detect (PD). An outline of the HB526C264EN, HB526C464EN are

168-pin socket type package (dual lead out). Therefore, the HB526C264EN, HB526C464EN make high

density mounting possible without surface mount technology. The HB526C264EN, HB526C464EN

provide common data inputs and outputs. Decoupling capacitors are mounted beside each TSOP on the

module board.

Features

•

168-pin socket type package (dual lead out)



Outline: 133.37 mm (Length)

31.75 mm (Height)

2.92/4.00 mm (Thickness)



Lead pitch: 1.27 mm

•

3.3V power supply

•

Clock frequency: 66 MHz

•

JEDEC standard outline unbuffered 8-byte DIMM

•

LVTTL interface

•

Data bus width:

64 Non parity

•

2 Banks can operates simultaneously and independently

•

Burst read/write operation and burst read/single write operation capability

•

Programmable burst length: 1/2/4/8/full page

•

Programmable burst sequence



Sequential/interleave

HB526C464EN-10IN Related Products

	HB526C464EN-10IN	HB526C264EN-10IN
Description	Synchronous DRAM Module, 4MX64, 9ns, CMOS, 133.37 X 2.92 MM, 31.75 MM HEIGHT, 1.27 MM PITCH, DIMM-168	Synchronous DRAM Module, 2MX64, 9ns, CMOS, 133.37 X 2.92 MM, 31.75 MM HEIGHT, 1.27 MM PITCH, DIMM-168
Maker	Hitachi （Renesas ）	Hitachi （Renesas ）
Parts packaging code	DIMM	DIMM
package instruction	DIMM, DIMM168	DIMM, DIMM168
Contacts	168	168
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
access mode	FOUR BANK PAGE BURST	DUAL BANK PAGE BURST
Maximum access time	9 ns	9 ns
Maximum clock frequency (fCLK)	66 MHz	66 MHz
I/O type	COMMON	COMMON
JESD-30 code	R-XDMA-N168	R-XDMA-N168
memory density	268435456 bit	134217728 bit
Memory IC Type	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE
memory width	64	64
Number of functions	1	1
Number of ports	1	1
Number of terminals	168	168
word count	4194304 words	2097152 words
character code	4000000	2000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	65 °C	65 °C
organize	4MX64	2MX64
Output characteristics	3-STATE	3-STATE
Package body material	UNSPECIFIED	UNSPECIFIED
encapsulated code	DIMM	DIMM
Encapsulate equivalent code	DIMM168	DIMM168
Package shape	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
power supply	3.3 V	3.3 V
Certification status	Not Qualified	Not Qualified
refresh cycle	4096	4096
Maximum standby current	0.032 A	0.016 A
Maximum slew rate	1.08 mA	0.8 mA
Maximum supply voltage (Vsup)	3.6 V	3.6 V
Minimum supply voltage (Vsup)	3 V	3 V
Nominal supply voltage (Vsup)	3.3 V	3.3 V
surface mount	NO	NO
technology	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL
Terminal form	NO LEAD	NO LEAD
Terminal pitch	1.27 mm	1.27 mm
Terminal location	DUAL	DUAL

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