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2SC4073

Description
Bipolar Transistors;NPN;5A;400V;TO-220F
CategoryDiscrete semiconductor   
File Size206KB,2 Pages
ManufacturerInchange Semiconductor
Download Datasheet Parametric View All

2SC4073 Overview

Bipolar Transistors;NPN;5A;400V;TO-220F

2SC4073 Parametric

Parameter NameAttribute value
MakerInchange Semiconductor
package instruction,
Reach Compliance Codeunknow
ECCN codeEAR99
isc
Silicon NPN Power Transistor
2SC4073
DESCRIPTION
·Collector-Emitter
Breakdown Voltage-
: V
(BR)CEO
= 400V(Min)
·High
Switching Speed
·Minimum
Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed
for switching regulator and general purpose
applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
C
T
J
T
stg
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
Storage Temperature
VALUE
500
400
10
5
10
2
30
150
-55~150
UNIT
V
V
V
A
A
A
W
isc website
www.iscsemi.com
1
isc & iscsemi
is registered trademark

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