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ST303C12DH3

Description
Silicon Controlled Rectifier, 190000mA I(T), 1200V V(DRM)
CategoryAnalog mixed-signal IC    Trigger device   
File Size133KB,9 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric View All

ST303C12DH3 Overview

Silicon Controlled Rectifier, 190000mA I(T), 1200V V(DRM)

ST303C12DH3 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
package instruction,
Reach Compliance Codeunknow
ECCN codeEAR99
Nominal circuit commutation break time30 µs
Maximum DC gate trigger current200 mA
Maximum DC gate trigger voltage3 V
Maximum holding current600 mA
Maximum leakage current50 mA
On-state non-repetitive peak current8300 A
Maximum on-state voltage2.16 V
Maximum on-state current190000 A
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Off-state repetitive peak voltage1200 V
Trigger device typeSCR
Bulletin I25186 rev. A 05/94
ST303C..L SERIES
INVERTER GRADE THYRISTORS
Features
Metal case with ceramic insulator
International standard case TO-200AC (B-PUK)
All diffused design
Center amplifying gate
Guaranteed high dV/dt
Guaranteed high dI/dt
High surge current capibility
Low thermal impedance
High speed performance
Hockey Puk Version
515A
TypicalApplications
Inverters
Choppers
Induction heating
All types of force-commutated converters
case style TO-200AC (B-PUK)
Major Ratings and Characteristics
Parameters
I
T(AV)
@ T
hs
I
T(RMS)
@ T
hs
I
TSM
@ 50Hz
@ 60Hz
I
2
t
@ 50Hz
@ 60Hz
V
DRM
/V
RRM
t
q
range (*)
T
J
ST303C..L
515
55
995
25
7950
8320
316
289
400 to 1200
10 to 30
- 40 to 125
Units
A
°C
A
°C
A
A
KA
2
s
KA
2
s
V
µs
°
C
(*) t
q
= 10 to 20µs for 400 to 800V devices
t
q
= 15 to 30µs for 1000 to 1200V devices
www.irf.com
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