30KPA350A datasheet, PDF - EEWORLD Datasheet

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30KPA350A: DescriptionTVS Diode, 30000W, 391.00V, 428.1V, 350V, 2uA, 53.4A, 567.0V; CategoryDiscrete semiconductor Transient suppression diode; File Size1MB，3 Pages; ManufacturerLGE; Websitehttp://www.luguang.cn/web_en/index.html

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30KPA350A Overview

TVS Diode, 30000W, 391.00V, 428.1V, 350V, 2uA, 53.4A, 567.0V

30KPA350A Parametric

Parameter Name	Attribute value
Case Style	R-6
Ppk(W)	30000
MIN_(V)	391.00
MAX_(V)	428.1
Vwm_(V)	350
Ir_(uA)	2
Ippm_(A)	53.4
Vc_(V)	567.0
class	Diodes

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30KPA Series

Axial Lead

Transient Voltage Suppressors

R-6/P600

Reverse Voltage: 28 to 320 V

Peak Pulse Power: 30000 W

Features

●

Glass passivated chip

30000 W peak pulse power capability with a

10/1000 μs waveform, repetitive rate (duty

cycle):0.01 %

Low leakage

Uni and Bidirectional unit

Excellent clamping capability

Very fast response time

RoHS compliant

Case: Molded plastic

Epoxy: UL 94V-0 rate flame retardant

Lead: Solderable per MIL-STD-202, method

208 guranteed

Polarity: Color band denotes cathode end

except Bipolar

Mounting position: Any

●

1.000 [25.40]

MIN

DIA.

0.052 1.32

0.048 1.22

[ ]

Mechanical Data

●

0.360 9.14

0.340 8.64

[ ]

DIA.

0.360 9.14

0.340 8.64

[ ]

●

1.000 [25.40]

MIN

Dimensions :

inch [ mm ]

●

Maximum Ratings(T

=25℃ unless otherwise noted)

Parameter

Peak power dissipation with a 10/1000μs waveform

(1)

Peak pulse current with a 10/1000μs waveform

(1)

Power dissipation on infinite heatsink at T

= 75 °C

Peak forward surge current, 8.3 ms single half sine-

wave unidirectional only

(2)

Operating junction and storage temperature range

Note:

(1)Non-repetitive current pulse per Fig.5 and derated above T

= 25 °C per Fig.1

(2)Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum

Value

Symbol

30000

See Next Table

8.0

FSM

, T

STG

500

- 55 to +175

Unit

°C

Revision:20170701-P1

www.lgesem i

mail:lge@lgesemi.com

30KPA350A Related Products

	30KPA350A	30KPA300A	30KPA300CA	30KPA320A	30KPA320CA	30KPA350CA	30KPA360A	30KPA360CA
Description	TVS Diode, 30000W, 391.00V, 428.1V, 350V, 2uA, 53.4A, 567.0V	TVS Diode, 30000W, 334.00V, 367.4V, 300V, 2uA, 62.0A, 484.0V	TVS Diode, 30000W, 334.00V, 367.4V, 300V, 2uA, 62.0A, 484.0V	TVS Diode, 30000W, 357.40V, 392.4V, 320V, 2uA, 57.2A, 530.0V	TVS Diode, 30000W, 357.40V, 392.4V, 320V, 2uA, 57.2A, 530.0V	TVS Diode, 30000W, 391.00V, 428.1V, 350V, 2uA, 53.4A, 567.0V	TVS Diode, 30000W, 402.10V, 440.3V, 360V, 2uA, 47.3A, 640.0V	TVS Diode, 30000W, 402.10V, 440.3V, 360V, 2uA, 47.3A, 640.0V
Case Style	R-6	R-6	R-6	R-6	R-6	R-6	R-6	R-6
Ppk(W)	30000	30000	30000	30000	30000	30000	30000	30000
MIN_(V)	391.00	334.00	334.00	357.40	357.40	391.00	402.10	402.10
MAX_(V)	428.1	367.4	367.4	392.4	392.4	428.1	440.3	440.3
Vwm_(V)	350	300	300	320	320	350	360	360
Ir_(uA)	2	2	2	2	2	2	2	2
Ippm_(A)	53.4	62.0	62.0	57.2	57.2	53.4	47.3	47.3
Vc_(V)	567.0	484.0	484.0	530.0	530.0	567.0	640.0	640.0
class	Diodes	Diodes	Diodes	Diodes	Diodes	Diodes	Diodes	Diodes

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