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30KPA320A

Description
TVS Diode, 30000W, 357.40V, 392.4V, 320V, 2uA, 57.2A, 530.0V
CategoryDiscrete semiconductor    Transient suppression diode   
File Size1MB,3 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
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30KPA320A Overview

TVS Diode, 30000W, 357.40V, 392.4V, 320V, 2uA, 57.2A, 530.0V

30KPA320A Parametric

Parameter NameAttribute value
Case StyleR-6
Ppk(W)30000
MIN_(V)357.40
MAX_(V)392.4
Vwm_(V)320
Ir_(uA)2
Ippm_(A)57.2
Vc_(V)530.0
classDiodes
30KPA Series
Axial Lead
Transient Voltage Suppressors
R-6/P600
Reverse Voltage: 28 to 320 V
Peak Pulse Power: 30000 W
Features
Glass passivated chip
30000 W peak pulse power capability with a
10/1000 μs waveform, repetitive rate (duty
cycle):0.01 %
Low leakage
Uni and Bidirectional unit
Excellent clamping capability
Very fast response time
RoHS compliant
Case: Molded plastic
Epoxy: UL 94V-0 rate flame retardant
Lead: Solderable per MIL-STD-202, method
208 guranteed
Polarity: Color band denotes cathode end
except Bipolar
Mounting position: Any
1.000 [25.40]
MIN
DIA.
0.052 1.32
0.048 1.22
[ ]
Mechanical Data
0.360 9.14
0.340 8.64
[ ]
DIA.
0.360 9.14
0.340 8.64
[ ]
1.000 [25.40]
MIN
Dimensions :
inch [ mm ]
Maximum Ratings(T
A
=25℃ unless otherwise noted)
Parameter
Peak power dissipation with a 10/1000μs waveform
(1)
Peak pulse current with a 10/1000μs waveform
(1)
Power dissipation on infinite heatsink at T
L
= 75 °C
Peak forward surge current, 8.3 ms single half sine-
wave unidirectional only
(2)
Operating junction and storage temperature range
Note:
(1)Non-repetitive current pulse per Fig.5 and derated above T
A
= 25 °C per Fig.1
(2)Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum
Value
Symbol
P
PP
30000
I
PP
See Next Table
P
D
8.0
I
FSM
T
J
, T
STG
500
- 55 to +175
Unit
W
A
W
A
°C
ht
t
p
:
//
Revision:20170701-P1
www.lgesem i
.c
o
m
mail:lge@lgesemi.com

30KPA320A Related Products

30KPA320A 30KPA300A 30KPA300CA 30KPA320CA 30KPA350A 30KPA350CA 30KPA360A 30KPA360CA
Description TVS Diode, 30000W, 357.40V, 392.4V, 320V, 2uA, 57.2A, 530.0V TVS Diode, 30000W, 334.00V, 367.4V, 300V, 2uA, 62.0A, 484.0V TVS Diode, 30000W, 334.00V, 367.4V, 300V, 2uA, 62.0A, 484.0V TVS Diode, 30000W, 357.40V, 392.4V, 320V, 2uA, 57.2A, 530.0V TVS Diode, 30000W, 391.00V, 428.1V, 350V, 2uA, 53.4A, 567.0V TVS Diode, 30000W, 391.00V, 428.1V, 350V, 2uA, 53.4A, 567.0V TVS Diode, 30000W, 402.10V, 440.3V, 360V, 2uA, 47.3A, 640.0V TVS Diode, 30000W, 402.10V, 440.3V, 360V, 2uA, 47.3A, 640.0V
Case Style R-6 R-6 R-6 R-6 R-6 R-6 R-6 R-6
Ppk(W) 30000 30000 30000 30000 30000 30000 30000 30000
MIN_(V) 357.40 334.00 334.00 357.40 391.00 391.00 402.10 402.10
MAX_(V) 392.4 367.4 367.4 392.4 428.1 428.1 440.3 440.3
Vwm_(V) 320 300 300 320 350 350 360 360
Ir_(uA) 2 2 2 2 2 2 2 2
Ippm_(A) 57.2 62.0 62.0 57.2 53.4 53.4 47.3 47.3
Vc_(V) 530.0 484.0 484.0 530.0 567.0 567.0 640.0 640.0
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