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HER101L(G)

Description
High Efficiency Rectifier Diode, 1A, 50V, 30A, 1.0V, 1A, 5.0µA, 50nS
CategoryDiscrete semiconductor    High efficiency rectifier diode   
File Size1MB,2 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
Download Datasheet Parametric Compare View All

HER101L(G) Overview

High Efficiency Rectifier Diode, 1A, 50V, 30A, 1.0V, 1A, 5.0µA, 50nS

HER101L(G) Parametric

Parameter NameAttribute value
Case StyleA-405
Maximum average forward rectified curre1
Maximum recurrent peak reverse voltage50
Peak forward surge curre30
Maximum instantaneous forward voltage1.0
Maximum reverse curre5.0
TRR(nS)50
classDiodes
HER101L-HER108L
High Efficiency Rectifiers
Features
Low cost
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with Alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 1.0 A
A-405
Mechanical Data
Case:JEDEC
A-405,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight:
0.008 ounces,0.23 grams
Mounting position: Any
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
 
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
HER
101L
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@T
A
=75
HER HER HER HER HER HER HER
UNITS
102L 103L 104L 105L 106L 107L 108L
100
70
100
200
140
200
300
210
300
1.0
400
280
400
600
420
600
800
560
800
1000
700
1000
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@T
J
=125
I
FSM
30.0
A
Maximum instantaneous forw ard voltage
@ 1.0 A
Maximum reverse current
at rated DC blocking voltage
Typical reverse recovery time
Typical junction capacitance
Typical thermal resistance
@T
A
=25
@T
A
=100
(Note1)
(Note2)
(Note3)
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
T
STG
1.0
1.3
5.0
100.0
50
20
60
- 55 ---- + 150
- 55 ---- + 150
1.7
V
A
75
15
ns
pF
/W
Operating junction temperature range
Storage temperature range
NOTE: 1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
2. Measured at 1.0MH
Z
and applied rev erse v oltage of 4.0V DC.
3.Thermal resistance junction to ambient.
ht
t
p
:
//
Revision:20170701-P1
www.lgesemi
.c
o
m
mail:lge@lgesemi.com

HER101L(G) Related Products

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Case Style A-405 - A-405 - - A-405 A-405 A-405 A-405
Maximum recurrent peak reverse voltage 50 - 600 - - 800 200 400 400
Maximum instantaneous forward voltage 1.0 - 1.7 - - 1.7 1.0 1.3 1.0
TRR(nS) 50 - 75 - - 75 50 50 50
class Diodes - Diodes - - Diodes Diodes Diodes Diodes
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