Phase control thyristor
Features
●
Vacuum closed tube
gallium aluminum diffusion process.
Field gate structure.
Excellent dynamic characteristic.
Big current denisty.
Disc ceramic cold-press encapsulation.
The min imum allowed working temperature
Tjmi=-40℃ .
Double cooling &series-parallel.
Maximum junction temperature
Tjmi=-125℃.
I
T(AV)
Type
@T
C
=70℃
A
KP250A
KP300A
KP300A
KP300A
KP350A
KP360A
KP400A
KP400A
KP440A
KP470A
KP480A
KP500A
KP500A
KP500A
KP540A
KP540A
KP600A
KP600A
KP600A
KP700A
KP700A
KP760A
KP770A
KP800A
250
300
300
300
350
360
400
400
440
470
480
500
500
500
540
540
600
600
600
700
700
760
770
800
VDRM/V
RRM
●
●
●
●
●
●
●
I
TSM
10ms
kV
5
5
5.5
4.5
6.3
7
7
6
4.5
8
8
9.5
7.6
8.5
7
9.5
9
10
12.1
13
15
12
12.6
VTM
@VTM
&
T
C
=25℃
V
TO
RF
Tjm
RthjC
K/W
0.008
0.008
0.045
0.035
0.080
0.045
0.045
0.030
0.030
0.08
0.045
0.040
0.040
0.030
0.030
0.045
0.040
0.030
0.022
0.040
0.019
0.050
0.030
0.020
RthjCH
K/W
0.02
0.000
0.014
0.08
0.020
0.014
0.014
0.008
0.008
0.020
0.0140
0.0105
0.0105
0.008
0.008
0.0140
0.0105
0.080
0.050
0.0105
0.0045
0.0140
0.008
0.005
Tjm
℃
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
F±10%
KN
5
5
7
15
5
7
7
15
15
5
7
11
11
15
15
7
11
15
24
11
30
7
15
24
Outline
V
1400-1800
1800-2400
2400-3000
6800-7500
700-1600
1400-1800
1800-2400
4400-5200
5400-6500
200-600
1200-1600
1800-2400
2400-3000
2800-3600
3400-4200
800-1400
1400-1800
2400-3000
6800-7500
1200-1600
6800-7500
200-600
1800-2400
V
1.62
1.69
1.79
2.70
1.36
1.65
1.87
2.80
2.25
1.16
1.45
2.21
1.85
1.88
2.36
1.38
1.70
2.08
2.90
1.49
2.73
1.23
1.87
A
600
600
600
500
600
900
900
1000
500
600
600
1500
900
1000
1000
900
1500
1500
1000
900
1000
900
1500
1000
V
0.93
0.92
0.98
1.45
0.85
0.90
0.94
1.20
1.20
0.75
0.96
0.92
0.99
1.03
1.00
0.82
0.88
μΩ
1.15
1.29
1.35
2.50
0.64
0.77
1.036
1.60
2.10
0.36
0.59
0.86
0.95
0.85
1.36
0.48
0.52
0.68
1.55
0.40
1.33
0.33
0.63
1.015
1.06
1.35
0.99
1.40
0.73
0.92
5400-6500
11.5
2.26
1.24
Revision:20190101-P1
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