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KSC2331

Description
Bipolar transistor, 60V, 0.7A, 30MHZ, -55-150℃
CategoryDiscrete semiconductor    Bipolar transistor   
File Size1MB,2 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
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KSC2331 Overview

Bipolar transistor, 60V, 0.7A, 30MHZ, -55-150℃

KSC2331 Parametric

Parameter NameAttribute value
polarityNPN
Collector-emitter breakdown voltage60
Collector Current - Continuous0.7
DC current gain - Mi40
DC current gain - Max240
Transition frequency30
PackageTO-92L
Storage Temperature Range-55-150
classTransistors
KSC2331
TO-92L Transistor (NPN)
TO-92L
1.EMITTER
4.700
5.100
2.COLLECTOR
7.800
8.200
Features
1
2
3
3.BASE
0.600
0.800
Complement to KSA931
High collector-Base Voltage: V
CBO
=80V
Collector current: I
C
=700mA
Collector dissipation: P
C
=1W
MAXIMUM RATINGS (T
A
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power D
issipation
Junction Temperature
Storage Temperature
Value
80
60
8
700
1
150
-55-150
Units
V
V
V
mA
W
3.700
4.100
0.350
0.550
13.800
14.200
1.270 TYP
2.440
2.640
0.000
0.300
1.600
0.350
0.450
1.280
1.580
4.000
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Collector output capacitance
Transition frequency
Symbol
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
C
ob
f
T
Test
conditions
MIN
80
60
8
0.1
0.1
40
240
0.7
1.2
8
30
V
V
pF
MHz
TYP
MAX
UNIT
V
V
V
μA
μA
I
C
= 100μA,I
E
=0
I
C
= 10mA,I
B
=0
I
E
= 10μA,I
C
=0
V
CB
=60V,I
E
=0
V
EB
=5V,I
C
=0
V
CE
=2V,I
C
=50mA
I
C
=500m A,I
B
=50mA
I
C
=500mA,I
B
=50mA
V
CB
=10V,I
E
=0,f=1MHz
V
CE
=10V,I
C
=50mA
CLASSIFICATION OF h
FE
Rank
Range
R
40-80
O
70-140
Y
120-240
Revision:20170701-P1
ht
t
p
:
//
www.lgesem i
.c
o
m
mail:lge@lgesemi.com

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