KTC3875 datasheet, PDF - EEWORLD Datasheet

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KTC3875: DescriptionBipolar transistor, 50V, 0.15A, 80MHZ, -55-150℃; CategoryDiscrete semiconductor Bipolar transistor; File Size1MB，2 Pages; ManufacturerLGE; Websitehttp://www.luguang.cn/web_en/index.html

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KTC3875 Overview

Bipolar transistor, 50V, 0.15A, 80MHZ, -55-150℃

KTC3875 Parametric

Parameter Name	Attribute value
polarity	NPN
Collector-emitter breakdown voltage	50
Collector Current - Continuous	0.15
DC current gain - Mi	70
DC current gain - Max	700
Transition frequency	80
Package	SOT-23
Storage Temperature Range	-55-150
class	Transistors

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KTC3875

NPN Silicon Epitaxial Planar Transistor

FEATURES

Complementary To KTA1504.

Excellent H

FE

Linearity.

Low noise.

K

A

SOT-23

Dim

E

B

Min

2.70

1.10

Max

3.10

1.50

A

B

C

D

E

G

H

J

1.0 Typical

0.4 Typical

0.35

1.80

0.02

2.20

0.48

2.00

0.1

2.60

APPLICATIONS

General purpose application, switching application.

D

G

H

J

0.1 Typical

ORDERING INFORMATION

Type No.

KTC3875

Marking

ALO/ALY/ALG/ALL

Package Code

SOT-23

C

K

All Dimensions in mm

MAXIMUM RATING

@ Ta=25℃ unless otherwise specified

Symbol

V

CBO

V

CEO

V

EBO

I

C

I

B

P

C

T

j,

T

stg

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Base Current

Collector Power Dissipation

Junction and Storage Temperature

Value

60

50

5

150

30

150

-55 to +150

Units

V

mA

mW

℃

ELECTRICAL CHARACTERISTICS

@ Ta=25℃ unless otherwise specified

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Transition frequency

Collector output capacitance

Noise figure

Symbol

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

EBO

h

FE

V

CE(sat)

f

T

C

ob

NF

Test conditions

I

C

=100μA,I

E

=0

I

C

=1mA,I

B

=0

I

E

=100μA,I

C

=0

V

CB

=60V,I

E

=0

V

EB

=5V,I

C

=0

V

CE

=6V,I

C

=2mA

I

C

=100mA, I

B

=10mA

V

CE

=10V, I

C

= 1mA

V

CB

=10V,I

E

=0,f=1MHz

V

CE

=6V,I

C

=0.1mA,

F=1KHz,R

g

=10KΩ

80

2.0

1.0

3.5

10

70

0.1

MIN

60

50

5

0.1

700

0.25

V

MHz

pF

dB

TYP

MAX

UNIT

V

μA

CLASSIFICATION

Rank

Range

Marking

OF

O

70-140

ALO

h

FE

Y

120-240

ALY

GR

200-400

ALG

BL

350-700

ALL

ht

t

p

:

//

Revision:20170701-P1

www.lgesemi

.c

o

m

mail:lge@lgesemi.com

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