KTC3880S
NPN Silicon Epitaxial Planar Transistor
A
SOT-23
Dim
E
FEATURES
Small reverse transfer capacitance.
Low noise figure.
K
B
Min
2.70
1.10
Max
3.10
1.50
A
B
C
D
E
G
H
J
1.0 Typical
0.4 Typical
0.35
1.80
0.02
2.20
0.48
2.00
0.1
2.60
APPLICATIONS
High frequency Low noise amplifier application.
VHF band amplifier application.
C
D
G
H
J
0.1 Typical
K
All Dimensions in mm
ORDERING INFORMATION
Type No.
KTC3880S
Marking
AQR/AQO/AQY
Package Code
SOT-23
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
E
P
C
T
j,
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction and Storage Temperature
Value
40
30
4
20
-20
150
-55 to +150
Units
V
V
V
mA
mA
mW
℃
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
Parameter
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
Reverse Transfer Capacitance
Collector-Base Time Constant
Noise figure
Power Gain
Symbol
I
CBO
I
EBO
h
FE
f
T
C
re
C
C
.rbb
NF
G
pe
Test conditions
V
CB
=18V,I
E
=0
V
EB
=4V,I
C
=0
V
CE
=6V,I
C
=1mA
V
CE
=6V, I
C
= 1mA
V
CB
=6V,I
E
=0,f=1MHz
V
CB
=6V,I
E
=-1mA
f=30MHz
V
CC
=6V,I
E
=-1mA,
f=100KHz
2.5
15
18
40
300
550
0.7
30
5.0
MIN
TYP
MAX
0.5
0.5
200
MHz
pF
pS
UNIT
μA
μA
dB
CLASSIFICATION
Rank
Range
Marking
OF
h
FE
R
40-80
AQR
O
70-140
AQO
Y
100-200
AQY
ht
t
p
:
//
Revision:20170701-P1
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