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UF5404(G)

Description
High Efficiency Rectifier Diode, 3A, 400V, 150A, 1.0V, 3A, 10µA, 50nS
CategoryDiscrete semiconductor    High efficiency rectifier diode   
File Size665KB,2 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
Download Datasheet Parametric Compare View All

UF5404(G) Overview

High Efficiency Rectifier Diode, 3A, 400V, 150A, 1.0V, 3A, 10µA, 50nS

UF5404(G) Parametric

Parameter NameAttribute value
Case StyleDO-27
Maximum average forward rectified curre3
Maximum recurrent peak reverse voltage400
Peak forward surge curre150
Maximum instantaneous forward voltage1.0
Maximum reverse curre10
TRR(nS)50
classDiodes
UF5400G-UF5408G
Glass Passivated Rectifiers
DO - 27
Features
Glass passivated junction
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition
94V-0
v
Mechanical Data
Case:JEDEC DO-27,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.041 ounces,1.15 grams
Mounting position: Any
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
UF
UF
UF
UF
UF
UF
UF
UF
UF
UNITS
5400G 5401G 5402G 5403G 5404G 5405G 5406G 5407G 5408G
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@T
A
=75
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
100
70
100
200
140
200
300
210
300
400
280
400
3.0
500
350
500
600
420
600
800
560
800
1000
700
1000
V
V
V
A
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@T
J
=125
I
FSM
150.0
A
Maximum instantaneous forw ard voltage
v
at 3.0 A
Maximum reverse current
at rated DC blocking voltage
Maximum reverse recovery time
Typical junction capacitance
Typical thermal resistance
@T
A
=25
@T
A
=100
(Note1)
(Note2)
(Note3)
V
F
I
R
t
rr
C
J
R
θJA
T
J
T
STG
1.0
10.0
100.0
50
45
20
- 55 ---- + 175
- 55 ---- + 175
1.7
V
A
75
ns
pF
/W
Operating junction temperature range
Storage temperature range
NOTE: 1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
2. Measured at 1.0MHZ and applied rev erse v oltage of 4.0V DC.
3. Thermal
resistance junction
to
ambient.
Revision:20170301-P1
ht
t
p
:
//
www.lgesem i
.c
o
m
mail:lge@lgesemi.com

UF5404(G) Related Products

UF5404(G) UF5403(G) UF5407(G) UF5400(G) UF5401(G) UF5402(G) UF5405(G) UF5406(G) UF5408(G)
Description High Efficiency Rectifier Diode, 3A, 400V, 150A, 1.0V, 3A, 10µA, 50nS High Efficiency Rectifier Diode, 3A, 300V, 150A, 1.0V, 3A, 10µA, 50nS High Efficiency Rectifier Diode, 3A, 800V, 150A, 1.7V, 3A, 10µA, 75nS High Efficiency Rectifier Diode, 3A, 50V, 150A, 1.0V, 3A, 10µA, 50nS High Efficiency Rectifier Diode, 3A, 100V, 150A, 1.0V, 3A, 10µA, 50nS High Efficiency Rectifier Diode, 3A, 200V, 150A, 1.0V, 3A, 10µA, 50nS High Efficiency Rectifier Diode, 3A, 500V, 150A, 1.7V, 3A, 10µA, 75nS High Efficiency Rectifier Diode, 3A, 600V, 150A, 1.7V, 3A, 10µA, 75nS High Efficiency Rectifier Diode, 3A, 1000V, 150A, 1.7V, 3A, 10µA, 75nS
Case Style DO-27 DO-27 DO-27 DO-27 DO-27 DO-27 DO-27 DO-27 DO-27
Maximum recurrent peak reverse voltage 400 300 800 50 100 200 500 600 1000
Maximum instantaneous forward voltage 1.0 1.0 1.7 1.0 1.0 1.0 1.7 1.7 1.7
TRR(nS) 50 50 75 50 50 50 75 75 75
class Diodes Diodes Diodes Diodes Diodes Diodes Diodes Diodes Diodes
Maximum average forward rectified curre 3 3 3 - 3 3 3 3 -
Peak forward surge curre 150 150 150 - 150 150 150 150 -
Maximum reverse curre 10 10 10 - 10 10 10 10 -
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