UF5405(G) datasheet, PDF - EEWORLD Datasheet

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UF5405(G): DescriptionHigh Efficiency Rectifier Diode, 3A, 500V, 150A, 1.7V, 3A, 10µA, 75nS; CategoryDiscrete semiconductor High efficiency rectifier diode; File Size665KB，2 Pages; ManufacturerLGE; Websitehttp://www.luguang.cn/web_en/index.html

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UF5405(G) Overview

High Efficiency Rectifier Diode, 3A, 500V, 150A, 1.7V, 3A, 10µA, 75nS

UF5405(G) Parametric

Parameter Name	Attribute value
Case Style	DO-27
Maximum average forward rectified curre	3
Maximum recurrent peak reverse voltage	500
Peak forward surge curre	150
Maximum instantaneous forward voltage	1.7
Maximum reverse curre	10
TRR(nS)	75
class	Diodes

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UF5400G-UF5408G

Glass Passivated Rectifiers

DO - 27

Features

Glass passivated junction

Low leakage

Low forward voltage drop

High current capability

Easily cleaned with alcohol,Isopropanol

and similar solvents

The plastic material carries U/L recognition

94V-0

v

Mechanical Data

Case:JEDEC DO-27,molded plastic

Terminals: Axial lead ,solderable per

MIL- STD-202,Method 208

Polarity: Color band denotes cathode

Weight: 0.041 ounces,1.15 grams

Mounting position: Any

Dimensions in millimeters

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25

ambient temperature unless otherwise specified.

Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.

UF

UNITS

5400G 5401G 5402G 5403G 5404G 5405G 5406G 5407G 5408G

Maximum recurrent peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Maximum average forw ard rectified current

9.5mm lead length,

@T

A

=75

V

RRM

V

RMS

V

DC

I

F(AV)

50

35

50

100

70

100

200

140

200

300

210

300

400

280

400

3.0

500

350

500

600

420

600

800

560

800

1000

700

1000

V

A

Peak forw ard surge current

8.3ms single half-sine-w ave

superimposed on rated load

@T

J

=125

I

FSM

150.0

A

Maximum instantaneous forw ard voltage

v

at 3.0 A

Maximum reverse current

at rated DC blocking voltage

Maximum reverse recovery time

Typical junction capacitance

Typical thermal resistance

@T

A

=25

@T

A

=100

(Note1)

(Note2)

(Note3)

V

F

I

R

t

rr

C

J

R

θJA

T

J

T

STG

1.0

10.0

100.0

50

45

20

- 55 ---- + 175

1.7

V

A

75

ns

pF

/W

Operating junction temperature range

Storage temperature range

NOTE: 1. Measured with I

F

=0.5A, I

R

=1A, I

rr

=0.25A.

2. Measured at 1.0MHZ and applied rev erse v oltage of 4.0V DC.

3. Thermal

resistance junction

to

ambient.

Revision:20170301-P1

ht

t

p

:

//

www.lgesem i

.c

o

m

mail:lge@lgesemi.com

UF5405(G) Related Products

	UF5405(G)	UF5403(G)	UF5407(G)	UF5400(G)	UF5401(G)	UF5402(G)	UF5404(G)	UF5406(G)	UF5408(G)
Description	High Efficiency Rectifier Diode, 3A, 500V, 150A, 1.7V, 3A, 10µA, 75nS	High Efficiency Rectifier Diode, 3A, 300V, 150A, 1.0V, 3A, 10µA, 50nS	High Efficiency Rectifier Diode, 3A, 800V, 150A, 1.7V, 3A, 10µA, 75nS	High Efficiency Rectifier Diode, 3A, 50V, 150A, 1.0V, 3A, 10µA, 50nS	High Efficiency Rectifier Diode, 3A, 100V, 150A, 1.0V, 3A, 10µA, 50nS	High Efficiency Rectifier Diode, 3A, 200V, 150A, 1.0V, 3A, 10µA, 50nS	High Efficiency Rectifier Diode, 3A, 400V, 150A, 1.0V, 3A, 10µA, 50nS	High Efficiency Rectifier Diode, 3A, 600V, 150A, 1.7V, 3A, 10µA, 75nS	High Efficiency Rectifier Diode, 3A, 1000V, 150A, 1.7V, 3A, 10µA, 75nS
Case Style	DO-27	DO-27	DO-27	DO-27	DO-27	DO-27	DO-27	DO-27	DO-27
Maximum recurrent peak reverse voltage	500	300	800	50	100	200	400	600	1000
Maximum instantaneous forward voltage	1.7	1.0	1.7	1.0	1.0	1.0	1.0	1.7	1.7
TRR(nS)	75	50	75	50	50	50	50	75	75
class	Diodes	Diodes	Diodes	Diodes	Diodes	Diodes	Diodes	Diodes	Diodes
Maximum average forward rectified curre	3	3	3	-	3	3	3	3	-
Peak forward surge curre	150	150	150	-	150	150	150	150	-
Maximum reverse curre	10	10	10	-	10	10	10	10	-

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