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I583-1R3-26.000

Description
2.0 mm x 2.5 mm Ceramic Package SMD TCXO
File Size47KB,2 Pages
ManufacturerILSI
Websitehttp://www.ilsiamerica.com
Download Datasheet View All

I583-1R3-26.000 Overview

2.0 mm x 2.5 mm Ceramic Package SMD TCXO

2.0 mm x 2.5 mm Ceramic Package SMD TCXO
I583/I783 Series
Product Features:
Low Current Consumption
Ultra Miniature Package
RoHS Compliant
Compatible with Leadfree Processing
Applications:
Server & Storage
CDMA/WCDMA
802.11 / Wifi
T1/E1, T3/E3
2.0+/-0.2
2.50+/- 0.2
4
3
1
2
Frequency
Output Level
Clipped Sinewave
Output Load
Clipped Sinewave
Frequency Stability
Vs Temperature
Vs Voltage
Vs Load(5%)
Frequency Tolerance @ 25
C
Aging
Supply Voltage
Current
Voltage Control (I783)
Operating
Storage
Harmonics
Phase Noise
(Contact Sales Channel for other available frequencies)
1.1 Max.
0.6
2
0.8 V p-p Min.
10K Ohms / 10 pF
1
0.10
See Frequency Stability Table
0.2 ppm Max.
.0.2
ppm Max.
2
.0 ppm (After 2 Reflow)
nd
4
3
0.5
0.10
Recommended Pad Layout
1 ppm / Year Max.
2.80
See Supply Voltage Table , tolerance
5%
4
3
0.6
2.0 mA Max.
1.5 VDC
1.0 VDC,
5.0 ppm Min. (Custom Available)
See Operating Temperature Table
-40
C to +85
C
-8.0 dBc Max.
-130 dBc/Hz @ 1KHz
2.3
1
2
1.4
No pattern area
Pin
1
2
3
4
Connection
Vcontrol / N.C.
GND
Output
Vcc
Dimension Units: mm
Package
Part Number Guide
Operating Temperature
7 = 0 C to +50 C
1 = 0 C to +70 C
3 = -20 C to +70 C
5 = -30 C to +85 C
Sample Part Number: I583-5P8-26.000 Mhz
FrequencyStability vs Temperature
Supply Voltage
P =
2.0
ppm
Q =
2.5
ppm
R =
3.0
ppm
J =
5.0
ppm
3 = 3.3 V
7 = 3.0 V
8 = 2.8 V
2 = 2.7 V
1 = 1.8 V
Frequency
I583 (Clipped Sinewave TCXO)
I783 (Clipped Sinewave TCVCXO)
- 26.000 MHz
NOTE: A 0.01 µF bypass capacitor is recommended between Vcc (pin 4) and GND (pin 2) to minimize power supply noise.
** Not available for all temperature ranges.
ILSI
America
Phone: 775-851-8880 • Fax: 775-851-8882• e-mail: e-mail@ilsiamerica.com • www.ilsiamerica.com
11/07/12_B
Specifications subject to change without notice
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