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UT2N10G-TN3-T

Description
Power Field-Effect Transistor, 2A I(D), 100V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252,
CategoryDiscrete semiconductor    The transistor   
File Size174KB,4 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
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UT2N10G-TN3-T Overview

Power Field-Effect Transistor, 2A I(D), 100V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252,

UT2N10G-TN3-T Parametric

Parameter NameAttribute value
MakerUNISONIC TECHNOLOGIES CO.,LTD
package instructionSMALL OUTLINE, R-PSSO-G2
Reach Compliance Codecompli
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (ID)2 A
Maximum drain-source on-resistance1.05 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-252
JESD-30 codeR-PSSO-G2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)5 A
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
UNISONIC TECHNOLOGIES CO., LTD
UT2N10
Preliminary
Power MOSFET
2 Amps,100 Volts
N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC
UT2N10
is N-Channel enhancement mode silicon gate
power FET.it uses a special gate oxide designed to provide full rated
conductance at gate biases through 3V ~ 5V and facilitate true on-off
power control directly from logic circuit supply voltages.
The UTC
UT2N10
is universally applied in logic level (5V) driving
sources, such as automotive switching, solenoid drivers and
programmable controllers.
FEATURES
* 2A, 100V
* R
DS(ON)
= 1.050Ω
* Design Optimized for 5V Gate Drives
* Can be Driven Directly from QMOS, NMOS, TTL Circuits
* Compatible with Automotive Drive Requirements
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* Majority Carrier Device
SYMBOL
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
1 of 4
QW-R502-511.c

UT2N10G-TN3-T Related Products

UT2N10G-TN3-T UT2N10G-T92-R UT2N10L-T92-R UT2N10L-TN3-T
Description Power Field-Effect Transistor, 2A I(D), 100V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, Power Field-Effect Transistor, 2A I(D), 100V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, Power Field-Effect Transistor, 2A I(D), 100V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, Power Field-Effect Transistor, 2A I(D), 100V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252,
Maker UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD
package instruction SMALL OUTLINE, R-PSSO-G2 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code compli compli compli compli
ECCN code EAR99 EAR99 EAR99 EAR99
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 100 V 100 V 100 V 100 V
Maximum drain current (ID) 2 A 2 A 2 A 2 A
Maximum drain-source on-resistance 1.05 Ω 1.05 Ω 1.05 Ω 1.05 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-252 TO-92 TO-92 TO-252
JESD-30 code R-PSSO-G2 O-PBCY-T3 O-PBCY-T3 R-PSSO-G2
Number of components 1 1 1 1
Number of terminals 2 3 3 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR ROUND ROUND RECTANGULAR
Package form SMALL OUTLINE CYLINDRICAL CYLINDRICAL SMALL OUTLINE
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 5 A 5 A 5 A 5 A
surface mount YES NO NO YES
Terminal form GULL WING THROUGH-HOLE THROUGH-HOLE GULL WING
Terminal location SINGLE BOTTOM BOTTOM SINGLE
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
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