UNISONIC TECHNOLOGIES CO., LTD
UTT2N10-H
1.6A, 100V
MOSFET
DESCRIPTION
POWER MOSFET
HEXFET POWER
3
The UTC
UTT2N10-H
is an N-channel Power MOSFET, it uses
UTC’s advanced technology to provide the customers with high
switching speed and low gate charge.
The UTC
UTT2N10-H
is suitable for Load/system switch.
1
2
SOT-23-3
(JEDEC TO-236)
FEATURES
* R
DS(ON)
≤ 220 mΩ @ V
GS
=10V, I
D
=1.6A
R
DS(ON)
≤ 235 mΩ @ V
GS
=4.5V, I
D
=1.3A
* High switching speed
* Low gate charge
SYMBOL
3.Drain
1.Gate
2.Source
ORDERING INFORMATION
Package
SOT-23-3
Pin Assignment
3
1
2
G
S
D
Packing
Tape Reel
Ordering Number
Lead Free
Halogen Free
UTT2N10L-AE2-R
UTT2N10G-AE2-R
Note: Pin Assignment: G: Gate
S: Source
D: Drain
UTT2N10G-AE2-R
(1)Packing Type
(2)Package Type
(3)Green Package
(1) R: Tape Reel
(2) AE2: SOT-23-3
(3) G: Halogen Free and Lead Free, L: Lead Free
MARKING
2NAH
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QW-R209-082.C
UTT2N10-H
ABSOLUTE MAXIMUM RATING
(T
C
=25°С, unless otherwise specified)
PARAMETER
POWER MOSFET
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
100
V
Gate-Source Voltage
V
GSS
±16
V
Continuous
I
D
2
A
Drain Current
Pulsed (Note 2)
I
DM
4
A
Avalanche Energy (Note 3)
Single Pulsed (Note 3)
E
AS
0.1
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
2.1
V/ns
Power Dissipation
P
D
0.3
W
Junction Temperature
T
J
+150
°C
Storage Temperature Range
T
STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L = 0.1mH, I
AS
= 1.3A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25°C.
4. I
SD
≤ 2.0A, di/dt ≤ 100 A/μs, V
DD
≤ V
(BR)DSS
, T
J
= 25°C.
THERMAL DATA
PARAMETER
UNIT
°C/W
°C/W
SYMBOL
RATINGS
Junction to Ambient
θ
JA
177
Junction to Case
θ
JC
140 (Note)
Note: Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
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QW-R209-082.C
UTT2N10-H
ELECTRICAL CHARACTERISTICS
(T
J
=25°С, unless otherwise specified)
SYMBOL
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
TEST CONDITIONS
V
GS
=0V, I
D
=250µA
V
DS
=100V,V
GS
=0V
V
GS
=±16V
V
DS
=V
GS
, I
D
=250µA
V
GS
=10V, I
D
=1.6A
V
GS
=4.5V, I
D
=1.3A
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Drain to Source On-state Resistance
POWER MOSFET
MIN
100
TYP MAX UNIT
V
µA
nA
V
mΩ
mΩ
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
1
±100
1.0
2.5
220
235
310
25
20
10
2
1
4
17
32
25
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
Output Capacitance
C
OSS
V
DS
=25V,V
GS
=0V, f=1.0MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge (Note 1)
Q
G
V
DS
=80V, V
GS
=10V, I
D
=2A,
Gate Source Charge
Q
GS
I
G
=1mA (Note 1, 2)
Gate Drain Charge
Q
GD
Turn-ON Delay Time (Note 1)
t
D(ON)
Turn-ON Rise Time
t
R
V
DD
=50V, V
GS
=10V, I
D
=2A,
R
G
=25Ω (Note 1, 2)
Turn-OFF Delay Time
t
D(OFF)
Turn-OFF Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Continuous Drain-Source Diode
I
S
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
Drain-Source Diode Forward Voltage (Note 1)
V
SD
I
S
=2A, V
GS
=0V
Reverse Recovery Time (Note 1)
t
rr
I
S
=2A,V
GS
=0V, dI/dt=100A/µs
Reverse Recovery Charge
Q
rr
Notes: 1. Pulse Test : Pulse width ≤ 1000μs, Duty cycle ≤ 2%.
2. Essentially independent of operating ambient temperature.
2
4
1.4
46
48
A
A
V
ns
nC
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UTT2N10-H
TEST CIRCUITS AND WAVEFORMS
POWER MOSFET
V
GS
Same Type
as DUT
Q
G
V
DS
V
GS
DUT
Q
GS
Q
GD
Charge
Gate Charge Test Circuit
Gate Charge Waveforms
V
DS
R
G
R
D
90%
V
GS
V
DS
10%
DUT
V
GS
t
d(ON)
t
ON
t
R
t
d(OFF)
t
F
t
OFF
Resistive Switching Test Circuit
Resistive Switching Waveforms
V
DS
R
G
BV
DSS
L
I
AS
E
AS
= 1 LI
AS2
2
BV
DSS
BV
DSS
-V
DD
I
D
I
D
(t)
t
P
DUT
V
DD
V
DD
V
DS
(t)
Time
t
P
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
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TYPICAL CHARACTERISTICS
POWER MOSFET
4
Drain Current vs. Drain-Source
Voltage
3
Drain-Source On-Resistance vs.
Gate-Source Voltage
Note:
1.T
A
=25°C
2.Pulse test
V
GS
=4V~10V
Drain Current, I
D
(A)
3
3V
Drain-Source On-Resistance,
R
DS(ON)
(Ω)
2
I
D
=1A
2A
2
Note:
1.T
A
=25°C
2.Pulse test
2.5V
0
0 0.5 1 0.5 2 2.5
1
1
0
3 3.5 4 4.5
2
2.5
3
3.5
4
4.5
5
Drain-Source Voltage, V
DS
(V)
Gate-Source Voltage, V
GS
(V)
Gate Charge Characteristics
12
1000
V
DS
=80V
V
GS
=10V
I
D
=2A
Pulsed
Capacitance Characteristics
Gate-Source Voltage, V
GS
(V)
10
8
6
4
2
Capacitance, C (pF)
CISS
100
COSS
CRSS
0
0
2
4
6
8
10
Total Gate Charge, Q
G
(nC)
Drain-Source On-Resistance vs.
Junction Temperature
10
0
10
20
30
40
50
Drain-Source Voltage, V
DS
(V)
Breakdown Voltage vs. Junction
Temperature
I
D
=0.25mA
Pulsed
0.5
1.4
0.4
Drain-Source Breakdown Voltage
Normalized
75
100
125
150
Drain-Source On-Resistance,
R
DS(ON)
(Ω)
V
GS
=10V
I
D
=1.6A
Pulsed
1.2
0.3
1
0.2
0.1
25
50
Junction Temperature, T
J
(°C)
0.8
25
50
75
100
125
150
Junction Temperature, T
J
(°C)
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QW-R209-082.C
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