P370KH02DH0 datasheet, PDF - EEWORLD Datasheet

P370KH02DH0: DescriptionSilicon Controlled Rectifier, 550000mA I(T), 200V V(DRM),; CategoryAnalog mixed-signal IC Trigger device; File Size724KB，6 Pages; ManufacturerIXYS

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P370KH02DH0 Overview

Silicon Controlled Rectifier, 550000mA I(T), 200V V(DRM),

Parameter Name	Attribute value
package instruction	,
Reach Compliance Code	compli
Nominal circuit commutation break time	30 µs
Critical rise rate of minimum off-state voltage	50 V/us
Maximum DC gate trigger current	300 mA
Maximum DC gate trigger voltage	3 V
Maximum holding current	1000 mA
Maximum leakage current	75 mA
On-state non-repetitive peak current	12000 A
Maximum on-state voltage	1.51 V
Maximum on-state current	550000 A
Maximum operating temperature	125 °C
Minimum operating temperature	-40 °C
Off-state repetitive peak voltage	200 V
surface mount	NO
Trigger device type	SCR
Base Number Matches	1

	P370KH02DH0	P370KH08EN0	P370KH04EN0
Description	Silicon Controlled Rectifier, 550000mA I(T), 200V V(DRM),	Silicon Controlled Rectifier, 550000mA I(T), 800V V(DRM),	Silicon Controlled Rectifier, 550000mA I(T), 400V V(DRM),
Reach Compliance Code	compli	compli	compliant
Nominal circuit commutation break time	30 µs	10 µs	10 µs
Critical rise rate of minimum off-state voltage	50 V/us	100 V/us	100 V/us
Maximum DC gate trigger current	300 mA	300 mA	300 mA
Maximum DC gate trigger voltage	3 V	3 V	3 V
Maximum holding current	1000 mA	1000 mA	1000 mA
Maximum leakage current	75 mA	75 mA	75 mA
On-state non-repetitive peak current	12000 A	12000 A	12000 A
Maximum on-state voltage	1.51 V	1.51 V	1.51 V
Maximum on-state current	550000 A	550000 A	550000 A
Maximum operating temperature	125 °C	125 °C	125 °C
Minimum operating temperature	-40 °C	-40 °C	-40 °C
Off-state repetitive peak voltage	200 V	800 V	400 V
surface mount	NO	NO	NO
Trigger device type	SCR	SCR	SCR
Base Number Matches	1	1	1

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