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P370KH08EN0

Description
Silicon Controlled Rectifier, 550000mA I(T), 800V V(DRM),
CategoryAnalog mixed-signal IC    Trigger device   
File Size724KB,6 Pages
ManufacturerIXYS
Related ProductsFound1parts with similar functions to P370KH08EN0
Download Datasheet Parametric Compare View All

P370KH08EN0 Overview

Silicon Controlled Rectifier, 550000mA I(T), 800V V(DRM),

P370KH08EN0 Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codecompli
Nominal circuit commutation break time10 µs
Critical rise rate of minimum off-state voltage100 V/us
Maximum DC gate trigger current300 mA
Maximum DC gate trigger voltage3 V
Maximum holding current1000 mA
Maximum leakage current75 mA
On-state non-repetitive peak current12000 A
Maximum on-state voltage1.51 V
Maximum on-state current550000 A
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Off-state repetitive peak voltage800 V
surface mountNO
Trigger device typeSCR
Base Number Matches1

P370KH08EN0 Related Products

P370KH08EN0 P370KH02DH0 P370KH04EN0
Description Silicon Controlled Rectifier, 550000mA I(T), 800V V(DRM), Silicon Controlled Rectifier, 550000mA I(T), 200V V(DRM), Silicon Controlled Rectifier, 550000mA I(T), 400V V(DRM),
Reach Compliance Code compli compli compliant
Nominal circuit commutation break time 10 µs 30 µs 10 µs
Critical rise rate of minimum off-state voltage 100 V/us 50 V/us 100 V/us
Maximum DC gate trigger current 300 mA 300 mA 300 mA
Maximum DC gate trigger voltage 3 V 3 V 3 V
Maximum holding current 1000 mA 1000 mA 1000 mA
Maximum leakage current 75 mA 75 mA 75 mA
On-state non-repetitive peak current 12000 A 12000 A 12000 A
Maximum on-state voltage 1.51 V 1.51 V 1.51 V
Maximum on-state current 550000 A 550000 A 550000 A
Maximum operating temperature 125 °C 125 °C 125 °C
Minimum operating temperature -40 °C -40 °C -40 °C
Off-state repetitive peak voltage 800 V 200 V 400 V
surface mount NO NO NO
Trigger device type SCR SCR SCR
Base Number Matches 1 1 1

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