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BCW65B

Description
800 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size49KB,5 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

BCW65B Overview

800 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR

BCW65B Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInfineon
Parts packaging codeSOT-23
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.8 A
Collector-emitter maximum voltage32 V
ConfigurationSINGLE
Minimum DC current gain (hFE)160
JEDEC-95 codeTO-236
JESD-30 codeR-PDSO-G3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.35 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)170 MHz
Base Number Matches1
BCW65, BCW66
NPN Silicon AF Transistor
For general AF applications
High current gain
Low collector-emitter saturation voltage
Complementary types: BCW67, BCW68 (PNP)
3




2
1
VPS05161
Type
BCW65A
BCW65B
BCW65C
BCW66F
BCW66G
BCW66H
Maximum Ratings
Parameter
Marking
EAs
EBs
ECs
EFs
EGs
EHs
1=B
1=B
1=B
1=B
1=B
1=B
Pin Configuration
2=E
2=E
2=E
2=E
2=E
2=E
3=C
3=C
3=C
3=C
3=C
3=C
Package
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
Symbol
V
CEO
V
CBO
V
EBO
BCW65
32
60
5
800
1
100
200
330
150
BCW66
45
75
5
Unit
V
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Peak collector current
Base current
Peak base current
Total power dissipation
,
T
S
= 79 °C
Junction temperature
Storage temperature
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
mA
A
mA
mW
°C
-65 ... 150
Thermal Resistance
Junction - soldering point
1)
R
thJS

215
K/W
1For calculation of
R
thJA
please refer to Application Note Thermal Resistance
1
Jul-10-2001

BCW65B Related Products

BCW65B BCW65 BCW65A BCW65C BCW66 BCW66H BCW66F BCW66G
Description 800 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR 800 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR 800 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR 800 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR 800 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR 800 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR 800 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR SMALL SIGNAL TRANSISTOR
Reach Compliance Code unknown compli unknow compli compli compli compli compli
Maximum collector current (IC) 0.8 A 0.8 A 0.8 A 0.8 A 0.8 A 0.8 A 0.8 A 0.8 A
Configuration SINGLE Single SINGLE SINGLE Single SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 160 100 100 250 100 250 100 160
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Polarity/channel type NPN NPN NPN NPN NPN NPN NPN NPN
Maximum power dissipation(Abs) 0.35 W 0.65 W 0.3 W 0.35 W 0.65 W 0.3 W 0.35 W 0.35 W
surface mount YES YES YES YES YES YES YES YES
Nominal transition frequency (fT) 170 MHz 100 MHz 170 MHz 170 MHz 100 MHz 170 MHz 170 MHz 170 MHz
Is it Rohs certified? conform to - conform to conform to conform to conform to conform to conform to
Maker Infineon Infineon Infineon Infineon Infineon - Infineon Infineon
Parts packaging code SOT-23 - SOT-23 SOT-23 - SOT-23 SOT-23 SOT-23
package instruction SMALL OUTLINE, R-PDSO-G3 , SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 - SMALL OUTLINE, R-PDSO-G3 SOT-23, 3 PIN SOT-23, 3 PIN
Contacts 3 - 3 3 - 3 3 3
ECCN code EAR99 - EAR99 EAR99 - EAR99 EAR99 EAR99
Collector-emitter maximum voltage 32 V - 32 V 32 V - 45 V 45 V 45 V
JEDEC-95 code TO-236 - TO-236 TO-236 - TO-236 TO-236 TO-236
JESD-30 code R-PDSO-G3 - R-PDSO-G3 R-PDSO-G3 - R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
Humidity sensitivity level 1 - 1 1 1 1 1 1
Number of components 1 - 1 1 - 1 1 1
Number of terminals 3 - 3 3 - 3 3 3
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Certification status Not Qualified - Not Qualified Not Qualified - Not Qualified Not Qualified Not Qualified
Terminal form GULL WING - GULL WING GULL WING - GULL WING GULL WING GULL WING
Terminal location DUAL - DUAL DUAL - DUAL DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications AMPLIFIER - AMPLIFIER AMPLIFIER - AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON - SILICON SILICON - SILICON SILICON SILICON
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