NPN Silicon AF Transistors
BCW 65
BCW 66
q
For general AF applications
q
High current gain
q
Low collector-emitter saturation voltage
q
Complementary types: BCW 67, BCW 68 (PNP)
Type
BCW 65 A
BCW 65 B
BCW 65 C
BCW 66 F
BCW 66 G
BCW 66 H
Marking
EAs
EBs
ECs
EFs
EGs
EHs
Ordering Code
(tape and reel)
Q62702-C1516
Q62702-C1612
Q62702-C1479
Q62702-C1892
Q62702-C1526
Q62702-C1632
Pin Configuration
1
2
3
B
E
C
Package
1)
SOT-23
1)
For detailed information see chapter Package Outlines.
Semiconductor Group
1
5.91
BCW 65
BCW 66
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current
Base current
Peak base current
Total power dissipation,
T
S
= 79 ˚C
Junction temperature
Storage temperature range
Thermal Resistance
Junction - ambient
1)
Junction - soldering point
R
th JA
R
th JS
≤
285
≤
215
Symbol
BCW 65
V
CE0
V
CB0
V
EB0
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
32
60
5
Values
BCW 66
45
75
5
800
1
100
200
330
150
– 65 … + 150
Unit
V
mA
A
mA
mW
˚C
K/W
1)
Package mounted on epoxy pcb 40 mm
×
40 mm
×
1.5 mm/6 cm
2
Cu.
Semiconductor Group
2
BCW 65
BCW 66
Electrical Characteristics
at
T
A
= 25 ˚C, unless otherwise specified.
Parameter
Symbol
min.
DC characteristics
Collector-emitter breakdown voltage
I
C
= 10 mA
BCW 65
BCW 66
Collector-base breakdown voltage
I
C
= 10
µ
A
BCW 65
BCW 66
Emitter-base breakdown voltage,
I
E
= 10
µ
A
Collector cutoff current
V
CB
= 32 V
V
CB
= 45 V
V
CB
= 32 V,
T
A
= 150 ˚C
V
CB
= 45 V,
T
A
= 150 ˚C
BCW 65
BCW 66
BCW 65
BCW 66
I
EB0
h
FE
35
50
80
75
110
180
100
160
250
35
60
100
–
–
–
–
–
–
160
250
350
–
–
–
–
–
–
–
–
–
250
400
630
–
–
–
V
(BR)CE0
32
45
V
(BR)CB0
60
75
V
(BR)EB0
I
CB0
–
–
–
–
–
–
–
–
–
–
20
20
20
20
20
nA
nA
µ
A
µ
A
nA
–
5
–
–
–
–
–
–
–
–
–
–
V
Values
typ.
max.
Unit
Emitter-base cutoff current,
V
EB
= 4 V
DC current gain
1)
I
C
= 100
µ
A,
V
CE
= 10 V
BCW 65 A, BCW 66 F
BCW 65 B, BCW 66 G
BCW 65 C, BCW 66 H
I
C
= 10 mA,
V
CE
= 1 V
BCW 65 A, BCW 66 F
BCW 65 B, BCW 66 G
BCW 65 C, BCW 66 H
I
C
= 100 mA,
V
CE
= 1 V
BCW 65 A, BCW 66 F
BCW 65 B, BCW 66 G
BCW 65 C, BCW 66 H
I
C
= 500 mA,
V
CE
= 2 V
BCW 65 A, BCW 66 F
BCW 65 B, BCW 66 G
BCW 65 C, BCW 66 H
1)
Pulse test:
t
≤
300
µ
s,
D
= 2 %.
Semiconductor Group
3
BCW 65
BCW 66
Electrical Characteristics
at
T
A
= 25 ˚C, unless otherwise specified.
Parameter
Symbol
min.
DC characteristics
Collector-emitter saturation voltage
1)
I
C
= 100 mA,
I
B
= 10 mA
I
C
= 500 mA,
I
B
= 50 mA
Base-emitter saturation voltage
1)
I
C
= 100 mA,
I
B
= 10 mA
I
C
= 500 mA,
I
B
= 50 mA
AC characteristics
Transition frequency
I
C
= 50 mA,
V
CE
= 5 V,
f
= 20 MHz
Output capacitance
V
CB
= 10 V,
f
= 1 MHz
Input capacitance
V
EB
= 0.5 V,
f
= 1 MHz
f
T
C
obo
C
ibo
–
–
–
170
6
60
–
–
–
MHz
pF
V
CEsat
–
–
V
BEsat
–
–
–
–
1.25
2
–
–
0.3
0.7
V
Values
typ.
max.
Unit
1)
Pulse test:
t
≤
300
µ
s,
D
= 2 %.
Semiconductor Group
4
BCW 65
BCW 66
Total power dissipation
P
tot
=
f
(T
A
*;
T
S
)
* Package mounted on epoxy
Transition frequency
f
T
=
f
(I
C
)
V
CE
= 5 V
Permissible pulse load
P
tot max
/P
tot DC
=
f
(t
p
)
Collector cutoff current
I
CB0
=
f
(T
A
)
V
CB
=
V
CEmax
Semiconductor Group
5
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