MCC
Features
omponents
21201 Itasca Street Chatsworth
!"#
$
% !"#
BCW68G
PNP Small
Signal Transistor
330mW
SOT-23
A
D
l
Ideally Suited for Automatic Insertion
l
150
o
C Junction Temperature
l
Low Current, Low Frequency
l
Epitaxial Planar Die Construction
Mechanical Data
l
Case: SOT-23, Molded Plastic
l
Terminals: Solderable per MIL-STD-202, Method 208
l
Marking: DG
l
Weight: 0.008 grams ( approx.)
Maximum Ratings @ 25
o
C Unless Otherwise Specified
F
E
C
B
Charateristic
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current(DC)
Peak Collector Current
Base Current(DC)
Peak Base Current
Power Dissipation@T
s
=79
o
C
Thermal Resistance, Junction to
Ambient Air
Thermal Resistance, Junction to
Soldering Point
Operating & Storage Temperature
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
CM
I
B
I
BM
P
d
R
θJA
R
θJS
Value
-45
-60
-5
-800
-1000
-100
-200
330
285
(1)
215
Unit
V
G
H
J
V
V
mA
mA
mA
mA
mW
o
DIM
A
B
C
D
E
F
G
H
J
K
K
DIMENSIONS
INCHES
MIN
.110
.083
.047
.035
.070
.018
.0005
.035
.003
.015
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
.120
.098
.055
.041
.081
.024
.0039
.044
.007
.020
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
C/W
C/W
o
o
Suggested Solder
Pad Layout
.031
.800
.035
.900
.079
2.000
inches
mm
T
j
, T
STG
-55~150
C
Notes:
(1) Valid provided that leads are kept at
ambient temperature.
.037
.950
.037
.950
www.mccsemi.com
BCW68G
Electrical Characteristics
DC Current Gain
(1)
at V
CE
= 10V, I
C
= 100µA
at V
CE
= 1V, I
C
= 10mA
at V
CE
= 1V, I
C
= 100mA
at V
CE
= 2V, I
C
= 500mA
Collector-Emitter Saturation Voltage
(1)
at I
C
= 100mA, I
B
= 10mA
at I
C
= 500mA, I
B
= 50mA
Base-Emitter Saturation Voltage
(1)
at I
C
= 100mA, I
B
= 10mA
at I
C
= 500mA, I
B
= 50mA
Collector-Emitter Breakdown Voltage
at I
C
= 10mA, I
B
= 0
Collector-Base Breakdown Voltage
at I
C
= 10µA, I
B
= 0
Emitter-Base Breakdown Voltage
at I
E
= 10µA, at I
C
= 0
Collector-Base Cut-off Current
at V
CB
= 45V, I
E
= 0
at V
CB
= 45V, I
E
= 0, T
A
= 150°C
Emitter-Base Cut-off Current
at V
EB
= 4V, I
C
= 0
Gain-Bandwidth Product
at V
CE
= 5V, I
C
= 50mA, f = 20MH
Z
Collector-Base Capacitance
at V
CB
= 10V, f = 1MHz
Emitter-Base Capacitance
at V
EB
= 0.5V, f = 1MHz
Note:
(1) Pulse test: t
≤
300µs, D = 2%
MCC
(T
A
= 25°C unless otherwise noted)
Symbol
h
FE
h
FE
h
FE
h
FE
V
CEsat
V
CEsat
V
BEsat
V
BEsat
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
Min.
50
120
160
60
–
–
–
–
45
60
5
TYP.
–
–
250
–
–
–
–
–
–
–
–
Max.
–
–
400
–
0.3
0.7
1.25
2
–
–
–
Unit
–
–
–
–
V
V
V
V
V
V
V
I
CBO
I
CBO
I
EBO
f
T
C
CB
C
EB
–
–
–
–
–
–
–
–
–
200
6
60
20
20
20
–
–
–
nA
µA
nA
MHz
pF
pF
www.mccsemi.com
京公网安备 11010802033920号
EEWORLD
