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IRFR9310TR

Description
1.8 A, 400 V, 7 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA
Categorysemiconductor    Discrete semiconductor   
File Size3MB,7 Pages
ManufacturerKersemi Electronic
Websitehttp://www.kersemi.com
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IRFR9310TR Overview

1.8 A, 400 V, 7 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA

IRFR9310TR Parametric

Parameter NameAttribute value
Number of terminals2
Minimum breakdown voltage400 V
Processing package descriptionLead FREE, Plastic, DPAK-3
Lead-freeYes
EU RoHS regulationsYes
stateTRANSFERRED
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingMATTE Tin OVER Nickel
Terminal locationsingle
Packaging MaterialsPlastic/Epoxy
structureSingle WITH BUILT-IN diode
Shell connectionDRAIN
Number of components1
transistor applicationsswitch
Transistor component materialssilicon
Channel typeP channel
field effect transistor technologyMetal-OXIDE SEMICONDUCTOR
operating modeENHANCEMENT
Transistor typeuniversal power supply
Maximum leakage current1.8 A
Rated avalanche energy92 mJ
Maximum drain on-resistance7 ohm
Maximum leakage current pulse7.2 A
IRFR9310, IRFU9310, SiHFR9310, SiHFU9310
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
- 400
V
GS
= - 10 V
13
3.2
5.0
Single
7.0
FEATURES
P-Channel
Surface Mount (IRFR9310/SiHFR9310)
Straight Lead (IRFU9310/SiHFU9310)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
S
D PAK
(TO-252)
IPAK
(TO-251)
G
D
P-Channel MOSFET
Third generation Power MOSFETs from Vishay utilize
advanced processing techniques to achieve low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU/SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
DPAK (TO-252)
IRFR9310PbF
SiHFR9310-E3
IRFR9310
SiHFR9310
DPAK (TO-252)
IRFR9310TRLPbF
a
SiHFR9310TL-E3
a
IRFR9310TRL
a
SiHFR9310TL
a
DPAK (TO-252)
IRFR9310TRPbF
a
SiHFR9310T-E3
a
IRFR9310TR
a
SiHFR9310T
a
DPAK (TO-252)
IRFR9310TRRPbF
a
SiHFR9310TR-E3
a
-
-
IPAK (TO-251)
IRFU9310PbF
SiHFU9310-E3
IRFU9310
SiHFU9310
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain
Linear Derating Factor
Single Pulse Avalanche Energy
b
Repetitive Avalanche Current
a
Repetitive Avalanche Energy
a
Maximum Power Dissipation
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Current
a
V
GS
at - 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
E
AS
I
AR
E
AR
P
D
dV/dt
T
J
, T
stg
LIMIT
- 400
± 20
- 1.8
- 1.1
- 7.2
0.40
92
- 1.8
5.0
50
- 24
- 55 to + 150
300
d
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
T
C
= 25 °C
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
J
= 25 °C, L = 57 mH, R
G
= 25
Ω,
I
AS
= - 1.8 A (see fig. 12).
c. I
SD
- 1.1 A, dI/dt
450 A/µs, V
DD
V
DS
, T
J
150 °C.
d. 1.6 mm from case.
www.kersemi.com
1

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Description 1.8 A, 400 V, 7 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA 1.8 A, 400 V, 7 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA 1.8 A, 400 V, 7 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA 1.8 A, 400 V, 7 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA 1.8 A, 400 V, 7 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA 1.8 A, 400 V, 7 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA 1.8 A, 400 V, 7 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA 1.8 A, 400 V, 7 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA 1.8 A, 400 V, 7 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA 1.8 A, 400 V, 7 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA
Number of terminals 2 2 2 2 2 2 2 2 2 2
Minimum breakdown voltage 400 V 400 V 400 V 400 V 400 V 400 V 400 V 400 V 400 V 400 V
Processing package description Lead FREE, Plastic, DPAK-3 Lead FREE, Plastic, DPAK-3 Lead FREE, Plastic, DPAK-3 Lead FREE, Plastic, DPAK-3 Lead FREE, Plastic, DPAK-3 Lead FREE, Plastic, DPAK-3 Lead FREE, Plastic, DPAK-3 Lead FREE, Plastic, DPAK-3 Lead FREE, Plastic, DPAK-3 Lead FREE, Plastic, DPAK-3
Lead-free Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes
EU RoHS regulations Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes
state TRANSFERRED TRANSFERRED TRANSFERRED TRANSFERRED TRANSFERRED TRANSFERRED TRANSFERRED TRANSFERRED TRANSFERRED TRANSFERRED
packaging shape Rectangle Rectangle Rectangle Rectangle Rectangle Rectangle Rectangle Rectangle Rectangle Rectangle
Package Size SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
surface mount Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
terminal coating MATTE Tin OVER Nickel MATTE Tin OVER Nickel MATTE Tin OVER Nickel MATTE Tin OVER Nickel MATTE Tin OVER Nickel MATTE Tin OVER Nickel MATTE Tin OVER Nickel MATTE Tin OVER Nickel MATTE Tin OVER Nickel MATTE Tin OVER Nickel
Terminal location single single single single single single single single single single
Packaging Materials Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy
structure Single WITH BUILT-IN diode Single WITH BUILT-IN diode Single WITH BUILT-IN diode Single WITH BUILT-IN diode Single WITH BUILT-IN diode Single WITH BUILT-IN diode Single WITH BUILT-IN diode Single WITH BUILT-IN diode Single WITH BUILT-IN diode Single WITH BUILT-IN diode
Shell connection DRAIN DRAIN DRAIN DRAIN DRAIN DRAIN DRAIN DRAIN DRAIN DRAIN
Number of components 1 1 1 1 1 1 1 1 1 1
transistor applications switch switch switch switch switch switch switch switch switch switch
Transistor component materials silicon silicon silicon silicon silicon silicon silicon silicon silicon silicon
Channel type P channel P channel P channel P channel P channel P channel P channel P channel P channel P channel
field effect transistor technology Metal-OXIDE SEMICONDUCTOR Metal-OXIDE SEMICONDUCTOR Metal-OXIDE SEMICONDUCTOR Metal-OXIDE SEMICONDUCTOR Metal-OXIDE SEMICONDUCTOR Metal-OXIDE SEMICONDUCTOR Metal-OXIDE SEMICONDUCTOR Metal-OXIDE SEMICONDUCTOR Metal-OXIDE SEMICONDUCTOR Metal-OXIDE SEMICONDUCTOR
operating mode ENHANCEMENT ENHANCEMENT ENHANCEMENT ENHANCEMENT ENHANCEMENT ENHANCEMENT ENHANCEMENT ENHANCEMENT ENHANCEMENT ENHANCEMENT
Transistor type universal power supply universal power supply universal power supply universal power supply universal power supply universal power supply universal power supply universal power supply universal power supply universal power supply
Maximum leakage current 1.8 A 1.8 A 1.8 A 1.8 A 1.8 A 1.8 A 1.8 A 1.8 A 1.8 A 1.8 A
Rated avalanche energy 92 mJ 92 mJ 92 mJ 92 mJ 92 mJ 92 mJ 92 mJ 92 mJ 92 mJ 92 mJ
Maximum drain on-resistance 7 ohm 7 ohm 7 ohm 7 ohm 7 ohm 7 ohm 7 ohm 7 ohm 7 ohm 7 ohm
Maximum leakage current pulse 7.2 A 7.2 A 7.2 A 7.2 A 7.2 A 7.2 A 7.2 A 7.2 A 7.2 A 7.2 A
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