IS64WV51232BLL-10BA3 datasheet, PDF

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IS64WV51232BLL-10BA3: Description512K X 32 STANDARD SRAM, 10 ns, PBGA90; Categorystorage; File Size217KB，19 Pages; ManufacturerISSI(Integrated Silicon Solution Inc.); Websitehttp://www.issi.com/

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IS64WV51232BLL-10BA3 Overview

512K X 32 STANDARD SRAM, 10 ns, PBGA90

IS64WV51232BLL-10BA3 Parametric

Parameter Name	Attribute value
Number of functions	1
Number of terminals	90
Minimum operating temperature	-40 Cel
Maximum operating temperature	125 Cel
Rated supply voltage	3.3 V
Minimum supply/operating voltage	2.4 V
Maximum supply/operating voltage	3.6 V
Processing package description	8 X 13 MM, 0.80 MM PITCH, BGA-90
each_compli	Yes
state	Active-Unconfirmed
ccess_time_max	10 ns
jesd_30_code	R-PBGA-B90
jesd_609_code	e0
storage density	1.68E7 bit
Memory IC type	STANDARD SRAM
memory width	32
moisture_sensitivity_level	3
Number of digits	524288 words
Number of digits	512K
operating mode	ASYNCHRONOUS
organize	512KX32
Packaging Materials	PLASTIC/EPOXY
ckage_code	LFBGA
packaging shape	RECTANGULAR
Package Size	GRID ARRAY, LOW PROFILE, FINE PITCH
serial parallel	PARALLEL
eak_reflow_temperature__cel_	NOT SPECIFIED
qualification_status	COMMERCIAL
seated_height_max	1.45 mm
surface mount	YES
Craftsmanship	CMOS
Temperature level	AUTOMOTIVE
terminal coating	TIN LEAD
Terminal form	BALL
Terminal spacing	0.8000 mm
Terminal location	BOTTOM
ime_peak_reflow_temperature_max__s_	NOT SPECIFIED
length	13 mm
width	8 mm

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IS61WV51232ALL/ALS

IS61WV51232BLL/BLS

IS64WV51232BLL/BLS

512K x 32 HIGH-SPEED ASYNCHRONOUS

CMOS STATIC RAM WITH 3.3V SUPPLY

FEATURES

• High-speed access times:

8, 10, 20 ns

• High-performance, low-power CMOS process

• Multiple center power and ground pins for greater

noise immunity

• Easy memory expansion with CE

and

options

•

power-down

• Fully static operation: no clock or refresh

required

• TTL compatible inputs and outputs

• Single power supply

1.65V to 2.2V (IS61WV51232Axx)

speed = 20ns for V

1.65V to 2.2V

2.4V to 3.6V (IS61/64WV51232Bxx)

speed = 10ns for V

2.4V to 3.6V

speed = 8ns for V

3.3V + 5%

• Packages available:

– 90-ball miniBGA (8mm x 13mm)

• Industrial and Automotive Temperature Support

• Lead-free available

JUNE 2016

high-speed, 16M-bit static RAMs organized as 512K words

by 32 bits. It is fabricated using

ISSI

's high-performance

CMOS technology. This highly reliable process coupled

with innovative circuit design techniques, yields high-

performance and low power consumption devices.

When

is HIGH (deselected), the device assumes a

standby mode at which the power dissipation can be re-

duced down with CMOS input levels.

Easy memory expansion is provided by using Chip Enable

and Output Enable inputs, CE

and

OE. The active LOW

Write Enable (WE)

controls both writing and reading of

the memory.

The device is packaged in the JEDEC standard 90-ball

BGA (8mm x 13mm).

DESCRIPTION

The

ISSI

IS61WV51232Axx/Bxx and IS64WV51232Bxx are

FUNCTIONAL BLOCK DIAGRAM

512K x 32

MEMORY ARRAY

A0-A18

DECODER

VDD

VSS

DQa-d

I/O

DATA

CIRCUIT

COLUMN I/O

BWa-d

CE2

CONTROL

CIRCUIT

notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest

version of this device specification before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reason-

ably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications

unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

Integrated Silicon Solution, Inc. — www.issi.com

Rev. A

06/01/2016

IS64WV51232BLL-10BA3 Related Products

	IS64WV51232BLL-10BA3	IS61WV51232ALL	IS61WV51232ALL-20BI	IS61WV51232ALS	IS61WV51232BLL	IS61WV51232BLL-10BI	IS61WV51232BLS	IS64WV51232BLL	IS64WV51232BLS
Description	512K X 32 STANDARD SRAM, 10 ns, PBGA90	512K X 32 STANDARD SRAM, 10 ns, PBGA90	512K X 32 STANDARD SRAM, 10 ns, PBGA90	512K X 32 STANDARD SRAM, 10 ns, PBGA90	512K X 32 STANDARD SRAM, 10 ns, PBGA90	512K X 32 STANDARD SRAM, 10 ns, PBGA90	512K X 32 STANDARD SRAM, 10 ns, PBGA90	512K X 32 STANDARD SRAM, 10 ns, PBGA90	512K X 32 STANDARD SRAM, 10 ns, PBGA90
Number of functions	1	1	1	1	1	1	1	1	1
Number of terminals	90	90	90	90	90	90	90	90	90
Minimum operating temperature	-40 Cel	-40 Cel	-40 Cel	-40 Cel	-40 Cel	-40 Cel	-40 Cel	-40 Cel	-40 Cel
Maximum operating temperature	125 Cel	85 Cel	85 Cel	85 Cel	85 Cel	85 Cel	85 Cel	85 Cel	85 Cel
Rated supply voltage	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
Minimum supply/operating voltage	2.4 V	2.4 V	2.4 V	2.4 V	2.4 V	2.4 V	2.4 V	2.4 V	2.4 V
Maximum supply/operating voltage	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V
Processing package description	8 X 13 MM, 0.80 MM PITCH, BGA-90	8 X 13 MM, 0.80 MM PITCH, LEAD FREE, BGA-90	8 X 13 MM, 0.80 MM PITCH, LEAD FREE, BGA-90	8 X 13 MM, 0.80 MM PITCH, LEAD FREE, BGA-90	8 X 13 MM, 0.80 MM PITCH, LEAD FREE, BGA-90	8 X 13 MM, 0.80 MM PITCH, LEAD FREE, BGA-90	8 X 13 MM, 0.80 MM PITCH, LEAD FREE, BGA-90	8 X 13 MM, 0.80 MM PITCH, LEAD FREE, BGA-90	8 X 13 MM, 0.80 MM PITCH, LEAD FREE, BGA-90
state	Active-Unconfirmed	ACTIVE	ACTIVE	ACTIVE	ACTIVE	ACTIVE	ACTIVE	ACTIVE	ACTIVE
storage density	1.68E7 bit	1.68E7 deg	1.68E7 deg	1.68E7 deg	1.68E7 deg	1.68E7 deg	1.68E7 deg	1.68E7 deg	1.68E7 deg
Memory IC type	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
memory width	32	32	32	32	32	32	32	32	32
operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
organize	512KX32	512K X 32	512K X 32	512K X 32	512K X 32	512K X 32	512K X 32	512K X 32	512K X 32
Packaging Materials	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
packaging shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package Size	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH
serial parallel	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
surface mount	YES	Yes	Yes	Yes	Yes	Yes	Yes	Yes	Yes
Craftsmanship	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	AUTOMOTIVE	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL
terminal coating	TIN LEAD	TIN SILVER COPPER	TIN SILVER COPPER	TIN SILVER COPPER	TIN SILVER COPPER	TIN SILVER COPPER	TIN SILVER COPPER	TIN SILVER COPPER	TIN SILVER COPPER
Terminal form	BALL	BALL	BALL	BALL	BALL	BALL	BALL	BALL	BALL
Terminal spacing	0.8000 mm	0.8000 mm	0.8000 mm	0.8000 mm	0.8000 mm	0.8000 mm	0.8000 mm	0.8000 mm	0.8000 mm
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Number of digits	512K	512K	512K	512K	512K	512K	512K	512K	512K
maximum access time	-	10 ns	10 ns	10 ns	10 ns	10 ns	10 ns	10 ns	10 ns
Lead-free	-	Yes	Yes	Yes	Yes	Yes	Yes	Yes	Yes
EU RoHS regulations	-	Yes	Yes	Yes	Yes	Yes	Yes	Yes	Yes

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