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SM4003

Description
1 A, 200 V, SILICON, SIGNAL DIODE, DO-213AB
Categorysemiconductor    Discrete semiconductor   
File Size481KB,2 Pages
ManufacturerOlitech Electronics
Websitehttp://olitech-elec.com/En_index.asp
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SM4003 Overview

1 A, 200 V, SILICON, SIGNAL DIODE, DO-213AB

SM4003 Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionPLASTIC, SM-1, 2 PIN
stateACTIVE
packaging shapeROUND
Package SizeLONG FORM
surface mountYes
Terminal formWRAP AROUND
Terminal locationEND
Packaging MaterialsPLASTIC/EPOXY
structureSINGLE
Shell connectionISOLATED
Diode component materialsSILICON
Diode typeSIGNAL DIODE
Maximum repetitive peak reverse voltage200 V
Maximum average forward current1 A
Email: info@olitech-elec.com
Website: www.olitech-elec.com
SM4001 THRU SM4007
SURFACE MOUNT GLASS PASSIVATED SILICON RECTIFIER
VOLTAGE RANGE
-50 to 1000 Volts
FORWARD CURRENT
1.0 A
FEATURES
For surface mounted applications
Glass passivated chip junction
Low leakage current
Plastic package has underwrites laboratory flammability
Classification 94V-0
High temperature soldering guaranteed
250℃/10 second at terminals
Plastic case MELF (DO-213AB)
MECHANICAL DATA
Case: molded plastic
Polarity: band indicate cathode
Mounting position: Any
Weight: 0.12 grams
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load
For capacitive load derate current by 20%
SYMBOLS
SM
4001
50
35
50
SM
4002
100
70
100
SM
4003
200
140
200
SM
4004
400
280
400
1.0
30
1.1
5.0
100
15
50
-65 to +150
3
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current at T
T
=100℃
Peak Forward Surge Current
8.3ms single half sine wave superimposed on
rated load (JEDEC method)
Maximum Instantaneous Forward Voltage at 1.0A
Maximum DC Reverse Current
at rated DC Blocking Voltage at
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance (Note 2)
Operating and Storage Temperature Range
T
A
= 25℃
T
A
= 125℃
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
R
θJT
T
rr
T
J
,T
STG
SM
4005
600
420
600
SM
4006
800
560
800
SM
4007
1000
700
1000
UNIT
Volts
Volts
Volts
Amps
Amps
Volts
µA
PF
℃/W
Notes:
1)
2)
3)
Measured at 1 MHz and applied reverse voltage of 4 V D.C
Thermal resistance from junction to terminal 6.0 mm copper pads to each terminal
Thermal resistance junction to terminal 6.0 mm copper pads to each terminal
3
Page:P2-P1
OLITECH ELECTRONICS CO. LTD.

SM4003 Related Products

SM4003 SM4001 SM4004 SM4002 SM4006 SM4005 SM4007
Description 1 A, 200 V, SILICON, SIGNAL DIODE, DO-213AB 1 A, 50 V, SILICON, SIGNAL DIODE 1 A, 400 V, SILICON, SIGNAL DIODE 1 A, 100 V, SILICON, SIGNAL DIODE 1 A, SILICON, SIGNAL DIODE 1 A, SILICON, SIGNAL DIODE SIGNAL DIODE
Number of terminals 2 2 2 2 - - -
Number of components 1 1 1 1 - - -
state ACTIVE DISCONTINUED DISCONTINUED DISCONTINUED - - ACTIVE
packaging shape ROUND Rectangle Rectangle round - - -
Package Size LONG FORM SMALL OUTLINE SMALL OUTLINE LONG FORM - - -
surface mount Yes Yes Yes Yes - - -
Terminal form WRAP AROUND C BEND C BEND WRAP AROUND - - -
Terminal location END pair pair END - - -
Packaging Materials PLASTIC/EPOXY Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy - - -
structure SINGLE single single single - - -
Diode component materials SILICON silicon silicon silicon - - -
Diode type SIGNAL DIODE Signal diode Signal diode Signal diode - - Signal diode
Maximum repetitive peak reverse voltage 200 V 50 V 400 V 100 V - - -
Maximum average forward current 1 A 1 A 1 A 1 A - - -

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