TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
PNP POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/545
DEVICES
LEVELS
2N5151
2N5151L
2N5151U3
2N5153
2N5153L
2N5153U3
JAN
JANTX
JANTXV
JANS
ABSOLUTE MAXIMUM RATINGS
(T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
2N5151, 2N5153, L
2N5151, 2N5153, L
2N5151U3, 2N5153U3
2N5151U3, 2N5153U3
@ T
A
= +25°C
(1)
@ T
C
= +25°C
(2)
@ T
A
= +25°C
(3)
@ T
C
= +25°C
(4)
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
80
100
5.5
2.0
1.0
10
1.16
100
-65 to +200
10
1.75 (U3)
Unit
Vdc
Vdc
Vdc
Adc
P
T
W
TO-5
2N5151L, 2N5153L
(See Figure 1)
Operating & Storage Junction Temperature Range
Thermal Resistance, Junction-to Case
Note:
1)
2)
3)
4)
Derate linearly 5.7mW/°C for T
A
> +25°
Derate linearly 66.7mW/°C for T
A
> +25°
Derate linearly 6.63mW/°C for T
A
> +25°
Derate linearly 571mW/°C for T
A
> +25°
T
J
, T
stg
R
θJC
°C
°C/W
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
I
C
= 100mAdc, I
B
= 0
Emitter-Base Cutoff Current
V
EB
= 4.0Vdc, I
C
= 0
V
EB
= 5.5Vdc, I
C
= 0
Collector-Emitter Cutoff Current
V
CE
= 60Vdc, V
BE
= 0
V
CE
= 100Vdc, V
BE
= 0
Collector-Base Cutoff Current
V
CE
= 40Vdc, I
B
= 0
V
(BR)CEO
80
Vdc
Symbol
Min.
Max.
Unit
TO-39 (TO-205AD)
2N5151, 2N5153
I
EBO
1.0
1.0
µAdc
mAdc
I
CES
1.0
1.0
50
µAdc
mAdc
µAdc
U-3
2N5151U3, 2N5153U3
I
CEO
T4-LDS-0132 Rev. 1 (091476)
Page 1 of 4
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
PNP POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/545
ELECTRICAL CHARACTERISTICS
Parameters / Test Conditions
ON CHARACTERTICS
Forward-Current Transfer Ratio
I
C
= 50mAdc, V
CE
= 5Vdc
I
C
= 2.5Adc, V
CE
= 5Vdc
I
C
= 5Adc, V
CE
= 5Vdc
Symbol
Min.
Max.
Unit
2N5151
2N5153
2N5151
2N5153
2N5151
2N5153
h
FE
20
50
30
70
20
40
90
200
Collector-Emitter Saturation Voltage
I
C
= 2.5Adc, I
B
= 250mAdc
I
C
= 5.0Adc, I
B
= 500mAdc
Base-Emitter Voltage Non-Saturation
I
C
= 2.5Adc, V
CE
= 5Vdc
Base-Emitter Saturation Voltage
I
C
= 2.5Adc, I
B
= 250mAdc
I
C
= 5.0Adc, I
B
= 500mAdc
V
CE(sat)
0.75
1.5
1.45
Vdc
V
BE
Vdc
V
BE(sat)
1.45
2.2
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
I
C
= 500mAdc, V
CE
= 5Vdc, f = 10MHz
2N5151
2N5153
Common-Emitter Small-Signal Short-Circuit. Forward-Current Transfer Ratio
I
C
= 100mAdc, V
CE
= 5Vdc, f = 1kHz
2N5151
2N5153
Output Capacitance
V
CB
= 10Vdc, I
E
= 0, f = 1.0MHz
|h
fe
|
6
7
h
fe
C
obo
20
50
250
pF
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Turn-On Time
I
C
= 5Adc, I
B1
= 500mAdc
I
B2
= -500mAdc
R
L
= 6Ω
V
BE(OFF)
= 3.7Vdc
Turn-Off Time
I
C
= 5Adc, I
B1
= 500mAdc
I
B2
= -500mAdc
R
L
= 6Ω
V
BE(OFF)
= 3.7Vdc
Symbol
Min.
Max.
Unit
μs
t
on
0.5
t
off
1.5
μs
T4-LDS-0132 Rev. 1 (091476)
Page 2 of 4
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
PNP POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/545
SWITCHING CHARACTERISTICS (cont.)
Parameters / Test Conditions
Storage Time
Fall Time
I
C
= 5Adc, I
B1
= 500mAdc
I
B2
= -500mAdc
R
L
= 6Ω
V
BE(OFF)
= 3.7Vdc
Symbol
t
s
t
f
Min.
Max.
1.4
0.5
Unit
μs
μs
SAFE OPERATING AREA
DC Tests
T
C
= +25°C, 1 Cycle, t
P
= 1.0s
Test 1
V
CE
= 5.0Vdc, I
C
= 2.0Adc
Test 2
V
CE
= 32Vdc, I
C
= 310mAdc
Test 3
V
CE
= 80Vdc, I
C
= 14.5mAdc
FIGURE 1 (TO-5, TO-39)
PACKAGE DIMENSIONS
Symbol
CD
CH
HD
LC
LD
LL
LU
L
1
L
2
Q
TL
TW
r
Dimensions
Inches
Millimeters
Min
Max
Min
Max
.305
.240
.335
.335
.260
.370
7.75
6.10
8.51
8.51
6.60
9.40
Notes
6
.200 TP
.016
.021
5.08 TP
0.41
0.53
7
8, 9
See notes 8, 9, 12, 13
.016
.019
.050
.250
.050
.029
.028
.045
.034
.010
45° TP
.100
0.74
0.71
6.35
1.27
1.14
0.86
0.25
45° TP
2.54
0.41
0.48
1.27
8, 9
8, 9
8, 9
6
4, 5
3
11
7
α
P
T4-LDS-0132 Rev. 1 (091476)
Page 3 of 4
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
PNP POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/545
NOTES:
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
Dimensions are in inches.
Millimeters are given for general information only.
Beyond r (radius) maximum, TW shall be held for a minimum length of .011 inch (0.28 mm).
TL measured from maximum HD.
Outline in this zone is not controlled.
CD shall not vary more than .010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling.
Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within.007 inch (0.18 mm)
radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC.
LU applied between L1 and L2. LD applies between L2 and LL minimum. Diameter is uncontrolled in L1 and beyond LL
minimum.
All three leads.
The collector shall be electrically and mechanically connected to the case.
r (radius) applies to both inside corners of tab.
In accordance with ASME Y14.5M, diameters are equivalent to
φx
symbology.
For transistor types 2N5151 and 2N5153, LL is .5 inch (13 mm) minimum, and .75 inch (19 mm) maximum.
For transistor types 2N5151L and 2N5153L, LL is 1.5 inch (38 mm) minimum and 1.75 inch (44.4 mm) maximum.
Lead designation, depending on device type, shall be as follows: lead numbering; lead 1 = emitter, lead 2 = base, and lead 3 =
collector.
FIGURE 2 (U3)
PACKAGE DIMMENSIONS
Symbol
Min
BL
BW
CH
LH
LL1
LL2
LS1
LS2
LW1
LW2
Q1
Q2
.395
.291
.1085
.010
.220
.115
Dimensions
Inches
Max
.405
.301
.1205
.020
.230
.125
Millimeters
Min
10.04
7.40
2.76
0.25
5.59
2.93
Max
10.28
7.64
3.06
0.51
5.84
3.17
3.81 BSC
1.91 BSC
.291
.100
7.14
2.29
0.762
0.762
7.39
2.54
.150 BSC
.075 BSC
.281
.090
.030
.030
NOTES:
1
2
3
Dimensions are in inches.
Millimeters are given for general information only.
Terminal 1 - collector, terminal 2 - base, terminal 3 - emitter
T4-LDS-0132 Rev. 1 (091476)
Page 4 of 4
京公网安备 11010802033920号
EEWORLD
