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BFP360

Description
NPN Silicon RF Transistor
File Size101KB,4 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Compare View All

BFP360 Overview

NPN Silicon RF Transistor

BFP360W
NPN Silicon RF Transistor
Preliminary data
Low voltage/ low current operation
For low noise amplifiers
For Oscillators up to 3.5 GHz and Pout > 10 dBm
Low noise figure: 1.0 dB at 1.8 GHz

3
4
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Parameter
1
T
is measured on the collector lead at the soldering point to the pcb
S
2For calculation of
R
please refer to Application Note Thermal Resistance
thJA
1

Junction - soldering point
2)




2
1
VPS05605
ESD
:
E
lectro
s
tatic
d
ischarge sensitive device, observe handling precaution!
Type
BFP360W
Maximum Ratings
Parameter
Marking
Pin Configuration
FBs
1=E 2=C 3=E 4=B -
Symbol
V
CEO
V
CES
V
CBO
V
EBO
I
C
I
B
P
tot
T
j
T
A
T
stg
Symbol
R
thJS
Package
-
SOT343
Value
Unit
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
1)
T
S
6
15
15
2
35
4
210
150
-65 ... 150
-65 ... 150
Value
V
mA
mW
°C
95°C
Unit
260
K/W
Jun-16-2003

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