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BUR22

Description
Bipolar Transistors;NPN;40A;250V;TO-3
CategoryDiscrete semiconductor   
File Size209KB,2 Pages
ManufacturerInchange Semiconductor
Download Datasheet View All

BUR22 Overview

Bipolar Transistors;NPN;40A;250V;TO-3

isc
Silicon NPN Power Transistor
DESCRIPTION
·Low
Collector Saturation Voltage-
: V
CE(
sat
)
= 1.0V (Max.) @I
C
= 20A
·High
Switching Speed
·High
DC Current Gain-
: h
FE
= 10(Min.) @I
C
= 20A
·Minimum
Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed
for high current, high speed, high power applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
350
250
7
40
50
8
250
200
-65~200
UNIT
V
V
V
A
A
A
W
BUR22
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
0.7
UNIT
℃/W
isc website
www.iscsemi.com
1
isc & iscsemi
is registered trademark

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