SEMICONDUCTOR
KBJ25
Single-Phase Bridge Rectifier, 25A
KBJ2504 Thru KBJ2512
RoHS
RoHS
N
ell
High Power Products
20.5
17.5
Ø
3
.3
31
9.5
0.8
6
All dimensions in millimeters
FEATURES
UL recognition file number E320098
Typical IR less than 2.0 µA
High surge current capability
Low thermal resistance
Compliant to RoHS
Isolation voltage up to 2500V
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave
rectification for big power supply, field supply for DC motor,
industrial automation applications.
PRIMARY CHARACTERRISTICS
I
F(AV)
V
RRM
I
FSM
I
R
V
F
T
J max.
25A
400V to 1200V
300A
5
µA
1.10V
150ºC
ADVANTAGE
International standard package
Epoxy meets UL 94 V-O flammability rating
Small volume, light weight
Small thermal resistance
High heat-conduction rate
Low temperature rise
Weight:
10g (0.35 ozs)
Page 1 of 3
3.3
10.2
7.6
7.6
SEMICONDUCTOR
KBJ25
RoHS
RoHS
N
ell
High Power Products
MAJOR RATINGS AND CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
KBJ25
PARAMETER
SYMBOL
UNIT
04
Maximum repetitive peak reverse voltage
Peak reverse non-repetitive voltage
Maximum DC blocking voltage
Maximum average forward rectified output current
Peak forward surge current single sine-wave superimposed on
rated load
Rating (non-repetitive, for t greater than 1 ms and less than 8.3 ms)
for fusing
RMS isolation voltage from case to leads
Operating junction storage temperature range
Storage temperature range
I
2
t
V
ISO
T
J
T
STG
V
RRM
V
RSM
V
DC
I
F(AV)
I
FSM
06
600
700
600
08
800
900
800
25
300
10
1000
1100
1000
12
1200
1300
1200
V
V
V
A
A
400
500
400
374
2500
-40
to 150
-40
to 125
A
2
s
V
ºC
ºC
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
PARAMETER
TEST
CONDITIONS
I
F = 12.5A
T
A = 25°C
T
A = 150°C
SYMBOL
KBJ25
UNIT
04
V
F
I
R
06
08
1.10
5
500
10
12
V
µA
Maximum instantaneous forward drop per diode
Maximum reverse DC current at rated DC blocking
voltage per diod
THERMAL AND MECHANICAC
(T
A
= 25°C unless otherwise noted)
KBJ25
PARAMETER
TEST CONDITIONS
SYMBOL
UNIT
04
Typical thermal resistance
junction to case
Mounting
torque
± 10 %
06
08
1.9
10
12
°C/W
Single-side heat dissipation, sine
half wave
A mounting compound is recommended
and the torque should be rechecked after
a period of
3
hours to allow for the spread
of the compound.
R
θJC
(1)
to heatsink M3
2.5
Nm
Approximate weight
10
g
Notes
(1) With heatsink, single side heat dissipation, half sine wave.
(2) M3 screw.
Device code
KBJ
25
10
3
1
2
3
-
-
-
Module type: “KBJ” Package,1Ø Bridge
I
F(AV)
rating:"25" for
25A
Voltage code:code x
100 =
V
RRM
Page 2 of 3
SEMICONDUCTOR
KBJ25
RoHS
RoHS
N
ell
High Power Products
On-state current and voltage
100
Peak on-state current (A)
10
1.0
0.1
0.01
0
0.2 0.4 0.6
0.8 1.0 1.2
1.4 1.6 1.8
Peak on-state voltage (V)
Case temperature vs on-state average current
50
On-state average current (A)
40
30
20
10
0
0
50
100
150
case temperature (℃)
On-state surge current vs cycles
500
On-state surge current (A)
400
300
200
100
0
1
10
100
Cycles @50Hz
Page 3 of 3
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