DATA SHEET
SEMICONDUCTOR
KBJ4005G THRU KBJ410G
4.0A GLASS PASSIVATED BRIDGE RECTIFIER
KBJ(mm)
FEATURES
•Glass
Passivated Die Construction
•High
Case Dielectric Strength of 1500VRMS
•Low
Reverse Leakage Current
•Surge
Overload Rating to 120A Peak
•Ideal
for Printed Circuit Board Applications
•Plastic
Material - UL Flammability
Classification 94V-0
•UL
Listed Under Recognized Component Index,
File Number E94661
•High
temperature soldering : 260
O
C / 10 seconds at terminals
•Pb
free product at available : 99% Sn above meet RoHS
environment substance directive request
P
N
H
C
A
B
_
K
J
L
M
E
D
R
G
KBJ
Dim
Min
Max
25.20
24.80
A
15.30
14.70
B
C
400 Nominal
D
17.20
17.80
1.10
0.90
E
7.70
7.30
G
H
3.10ψ 3.40ψ
J
3.30
3.70
2.10
1.90
K
9.70
9.30
L
2.90
2.50
M
N
3.40
3.80
P
4.40
4.80
0.80
0.60
R
All Dimensions in mm
MECHANICAL DATA
•Case:
Molded Plastic
•Terminals:
Plated Leads, Solderable per
MIL-STD-202, Method 208
•Polarity:
Molded on Body
•Mounting:
Through Hole for #6 Screw
•Mounting
Torque: 5.0 in-lbs Maximum
•Approx.
Weight: 4.6 grams
•Marking:
Type Number
Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
KBJ
4005G
50
35
KBJ
401G
100
70
KBJ
402G
200
140
KBJ
404G
400
280
4.0
150
1.0
5.0
500
40
5.5
-55 to +150
KBJ
406G
600
420
KBJ
408G
800
560
KBJ
410G
1000
700
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current @ TC = 100°C
Non-Repetitive Peak Forward Surge Current, 8.3 ms single
half-sine-wave superimposed on rated load
(JEDEC method)
Forward Voltage per element @ IF = 4.0A
Peak Reverse Current @TC = 25°C
at Rated DC Blocking Voltage @ TC = 125°C
Typical Junction Capacitance per Element (Note 1)
Typical Thermal Resistance (Note 2)
Operating and Storage Temperature Range
Symbol
VRRM
VRWM
VR
VR(RMS)
IO
IFSM
VFM
IRM
CJ
RθJA
Tj, TSTG
Unit
V
V
A
A
V
μA
PF
℃/W
℃
Notes: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
2. Thermal resistance from junction to case per element. Unit mounted on 300 x 300 x 1.6mm aluminum plate heat sink.
http://www.yeashin.com
1
REV.02 20120305
DEVICE CHARACTERISTICS
KBJ4005G THRU KBJ410G
5
4
I
F
, INSTANTANEOUS FORWARD CURRENT (A)
6
10
T
J
= 150°C
T
J
= 25°C
I
O
, AVERAGE RECTIFIED CURRENT (A)
1.0
3
2
1
Resistive or
Inductive load
0.1
0
25
50
75
100
125
150
Pulse width = 300µs
0.01
0
0.4
0.8
1.2
1.6
1.8
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
T
C
, CASE TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
180
1000
I
FSM
, PEAK FWD SURGE CURRENT (A)
T
j
= 150°C
120
C
j
, JUNCTION CAPACITANCE (pF)
160
Single half-sine-wave
(JEDEC method)
f = 1MHz
T
j
= 25°C
80
100
40
0
1
10
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Max Non-Repetitive Surge Current
100
10
0.1
1.0
10
100
V
R
, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
I
R
, INSTANTANEOUS REVERSE CURRENT (µA)
1000
T
J
= 150°C
100
T
J
= 125°C
T
J
= 100°C
10
1.0
T
J
= 25°C
0.1
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics
http://www.yeashin.com
2
REV.02 20120305
Power technology
京公网安备 11010802033920号
EEWORLD
