Silizium-Fotodiode
Silicon Photodiode
BPW 33
Wesentliche Merkmale
• Speziell geeignet für Anwendungen im Bereich
von 350 nm bis 1100 nm
• Sperrstromarm (typ. 20 pA)
• DIL-Plastikbauform mit hoher Packungsdichte
Anwendungen
• Belichtungsmesser
• Farbanalyse
Typ
Type
BPW 33
Bestellnummer
Ordering Code
Q62702-P76
Features
• Especially suitable for applications from
350 nm to 1100 nm
• Low reverse current (typ. 20 pA)
• DIL plastic package with high packing density
Applications
• Exposure meters
• Color analysis
2001-02-21
1
BPW 33
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter
Betriebs- und Lagertemperatur
Operating and storage temperature range
Sperrspannung
Reverse voltage
Verlustleistung,
T
A
= 25
°C
Total power dissipation
Symbol
Symbol
Wert
Value
– 40 … + 85
7
150
Einheit
Unit
°C
V
mW
T
op
;
T
stg
V
R
P
tot
Kennwerte
(
T
A
= 25
°C,
Normlicht A,
T
= 2856 K)
Characteristics
(
T
A
= 25
°C,
standard light A,
T
= 2856 K)
Bezeichnung
Parameter
Fotoempfindlichkeit,
V
R
= 5 V
Spectral sensitivity
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity
Spektraler Bereich der Fotoempfindlichkeit
S
= 10% von
S
max
Spectral range of sensitivity
S
= 10% of
S
max
Bestrahlungsempfindliche Fläche
Radiant sensitive area
Abmessung der bestrahlungsempfindlichen
Fläche
Dimensions of radiant sensitive area
Abstand Chipoberfläche zu Gehäuseoberfläche
Distance chip front to case surface
Halbwinkel
Half angle
Dunkelstrom,
V
R
= 1 V
Dark current
Nullpunktsteilheit,
E
= 0
Zero crossover
Spektrale Fotoempfindlichkeit,
λ
= 850 nm
Spectral sensitivity
Symbol
Symbol
Wert
Value
75 (≥ 35)
800
350 … 1100
Einheit
Unit
nA/Ix
nm
nm
S
λ
S max
λ
A
L
×
B
L
×
W
H
ϕ
7.34
2.71
×
2.71
mm
2
mm
×
mm
0.5
±
60
20 (≤ 100)
≤
2.5
0.59
mm
Grad
deg.
pA
pA/mV
A/W
I
R
S
0
S
λ
2001-02-21
2
BPW 33
Kennwerte
(
T
A
= 25
°C,
Normlicht A,
T
= 2856 K)
Characteristics
(
T
A
= 25
°C,
standard light A,
T
= 2856 K) (cont’d)
Bezeichnung
Parameter
Quantenausbeute,
λ
= 850 nm
Quantum yield
Leerlaufspannung,
E
v
= 1000 Ix
Open-circuit voltage
Kurzschlußstrom,
E
v
= 1000 Ix
Short-circuit current
Anstiegs- und Abfallzeit des Fotostromes
Rise and fall time of the photocurrent
R
L
= 1 kΩ;
V
R
= 5 V;
λ
= 850 nm;
I
p
= 70
µA
Durchlaßspannung,
I
F
= 100 mA,
E
= 0
Forward voltage
Kapazität,
V
R
= 0 V,
f
= 1 MHz,
E
= 0
Capacitance
Temperaturkoeffizient von
V
O
Temperature coefficient of
V
O
Temperaturkoeffizient von
I
SC
Temperature coefficient of
I
SC
Rauschäquivalente Strahlungsleistung
Noise equivalent power
V
R
= 1 V,
λ
= 850 nm
Nachweisgrenze,
V
R
= 1 V,
λ
= 850 nm
Detection limit
Symbol
Symbol
η
Wert
Value
0.86
440 (≥ 375)
72
1.5
Einheit
Unit
Electrons
Photon
mV
µA
µs
V
O
I
SC
t
r
,
t
f
V
F
C
0
TC
V
TC
I
NEP
1.3
630
– 2.6
0.2
4.3
×
10
– 15
V
pF
mV/K
%/K
W
-----------
-
Hz
cm
×
Hz
-------------------------
-
W
D*
6.3
×
10
13
2001-02-21
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BPW 33
Relative Spectral Sensitivity
S
rel
=
f
(λ)
100
S
rel
%
80
OHF00062
Photocurrent
I
P
=
f
(
E
v
),
V
R
= 5 V
Open-Circuit Voltage
V
O
=
f
(
E
v
)
Ι
P
10
3
µ
A
OHF01064
Total Power Dissipation
P
tot
=
f
(
T
A
)
160
mW
P
tot
140
120
100
OHF00958
10
4
mV
V
O
10
3
10
2
V
O
60
10
1
10
2
80
60
40
10
0
Ι
P
10
1
40
20
20
0
400
600
800
1000 nm 1200
λ
10
-1 0
10
10
0
10
1
10
2
10
3
lx 10
4
E
e
0
0
20
40
60
80 ˚C 100
T
A
Dark Current
I
R
=
f
(
V
R
),
E
= 0
80
OHF00073
Capacitance
C
=
f
(
V
R
),
f
= 1 MHz,
E
= 0
1000
C
pF
800
OHF01065
Dark Current
I
R
=
f
(
T
A
),
V
R
= 1 V,
E
= 0
Ι
R
10
4
pA
OHF00075
Ι
R
pA
60
10
3
700
600
40
500
400
300
10
2
20
200
100
10
1
0
0
1
2
3
4
5
6
7
8
V
R
V 10
0
-2
10
10
-1
10
0
10
1
V 10
2
V
R
10
0
0
20
40
60
80 ˚C 100
T
A
Directional Characteristics
S
rel
=
f
(ϕ)
40
30
20
10
ϕ
0
1.0
OHF01402
50
0.8
60
0.6
70
0.4
80
0.2
0
90
100
1.0
0.8
0.6
0.4
0
20
40
60
80
100
120
2001-02-21
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BPW 33
Maßzeichnung
Package Outlines
5.4 (0.213)
Cathode marking
4.0 (0.157)
3.7 (0.146)
0.6 (0.024)
0.4 (0.016)
1.2 (0.047)
0.7 (0.028)
4.9 (0.193)
4.5 (0.177)
0.8 (0.031)
0.6 (0.024)
0.6 (0.024)
0.4 (0.016)
2.2 (0.087)
1.9 (0.075)
4.3 (0.169)
Chip position
0.6 (0.024)
1.8 (0.071)
1.4 (0.055)
0.6 (0.024)
0.4 (0.016)
0.4 (0.016)
0.35 (0.014)
0.5 (0.020)
0.2 (0.008)
0.3 (0.012)
0.8 (0.031)
0.6 (0.024)
0 ... 5˚
Photosensitive area
2.65 (0.104) x 2.65 (0.104)
5.08 (0.200)
spacing
GEOY6643
Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch).
Published by OSRAM Opto Semiconductors GmbH & Co. OHG
Wernerwerkstrasse 2, D-93049 Regensburg
© All Rights Reserved.
Attention please!
The information describes the type of component and shall not be considered as assured characteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.
Packing
Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose!
Critical
components
1
, may only be used in life-support devices or systems
2
with the express written approval of OSRAM OS.
1
A critical component is a component usedin a life-support device or system whose failure can reasonably be expected
to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.
2
Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain
and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.
2001-02-21
5
3.5 (0.138)
3.0 (0.118)
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