BD239/A/B/C
BD239/A/B/C
Medium Power Linear and Switching
Applications
• Complement to BD240/A/B/C respectively
1
TO-220
2.Collector
3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CEO
Parameter
Collector-Emitter Voltage
: BD239
: BD239A
: BD239B
: BD239C
Collector-Emitter Voltage
: BD239
: BD239A
: BD239B
: BD239C
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
1.Base
Value
45
60
80
100
55
70
90
115
5
2
4
0.6
30
150
- 65 ~ 150
Units
V
V
V
V
V
V
V
V
V
A
A
A
W
°C
°C
V
CER
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
V
CEO
(sus)
Parameter
*Collector-Emitter Sustaining Voltage
: BD239
: BD239A
: BD239B
: BD239C
Collector Cut-off Current
: BD239/A
: BD239B/C
I
CES
Collector Cut-off Current
: BD239
: BD239A
: BD239B
: BD239C
I
EBO
h
FE
V
CE
(sat)
V
BE
(on)
Emitter Cut-off Current
*DC Current Gain
*Collector-Emitter Saturation Voltage
*Base-Emitter ON Voltage
V
CE
= 45V, V
BE
= 0
V
CE
= 60V, V
BE
= 0
V
CE
= 80V, V
BE
= 0
V
CE
= 100V, V
BE
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 4V, I
C
= 0.2A
V
CE
= 4V, I
C
= 1A
I
C
= 1A, I
B
= 0.2A
V
CE
= 4V, I
C
= 1A
40
15
0.7
1.3
V
V
0.2
0.2
0.2
0.2
1
mA
mA
mA
mA
mA
V
CE
= 30V, I
B
= 0
V
CE
= 60V, I
B
= 0
0.3
0.3
mA
mA
Test Condition
I
C
= 30mA, I
B
= 0
Min.
45
60
80
100
Typ.
Max.
Units
V
V
V
V
I
CEO
* Pulse Test: PW=350µs, duty Cycle≤2.0% Pulsed
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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©2000 Fairchild Semiconductor International
Rev. E
NXP MCU
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