Wideband Current Buffer
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | National Semiconductor（TI ） |
| Parts packaging code | DIP |
| package instruction | DIP, DIP10,.3 |
| Contacts | 10 |
| Reach Compliance Code | unknow |
| ECCN code | EAR99 |
| Amplifier type | BUFFER |
| Maximum average bias current (IIB) | 50 µA |
| Nominal bandwidth (3dB) | 25 MHz |
| Maximum bias current (IIB) at 25C | 50 µA |
| Maximum input offset voltage | 50000 µV |
| JESD-30 code | R-PDIP-T10 |
| JESD-609 code | e0 |
| length | 14.135 mm |
| Negative supply voltage upper limit | -22 V |
| Nominal Negative Supply Voltage (Vsup) | -12 V |
| Number of functions | 1 |
| Number of terminals | 10 |
| Maximum operating temperature | 70 °C |
| Minimum operating temperature | |
| Package body material | PLASTIC/EPOXY |
| encapsulated code | DIP |
| Encapsulate equivalent code | DIP10,.3 |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| power supply | +-12 V |
| Certification status | Not Qualified |
| Maximum seat height | 5.08 mm |
| Nominal slew rate | 125 V/us |
| Maximum slew rate | 10 mA |
| Supply voltage upper limit | 22 V |
| Nominal supply voltage (Vsup) | 12 V |
| surface mount | NO |
| technology | HYBRID |
| Temperature level | COMMERCIAL |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE |
| Terminal pitch | 2.54 mm |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| width | 7.62 mm |
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