BD440/442
BD440/442
Medium Power Linear and Switching
Applications
• Complement to BD439, BD441 respectively
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
: BD440
: BD442
V
CES
Collector-Emitter Voltage
: BD440
: BD442
Collector-Emitter Voltage
: BD440
: BD442
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
Parameter
1
TO-126
2.Collector
3.Base
1. Emitter
Value
- 60
- 80
- 60
- 80
- 60
- 80
-5
-4
-7
-1
36
150
- 65 ~ 1 50
Units
V
V
V
V
V
V
V
A
A
A
W
°C
°C
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
V
CEO
(sus)
Parameter
Collector-Emitter Sustaining Voltage
: BD440
: BD442
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
: BD440
: BD442
: BD440
: BD442
: BD440
: BD442
: BD440
: BD442
: BD440
: BD442
Test Condition
I
C
= - 100mA, I
B
= 0
V
CB
= - 60V, I
E
= 0
V
CB
= - 80V, I
E
= 0
V
CE
= - 60V, V
BE
= 0
V
CE
= - 80V, V
BE
= 0
V
EB
= - 5V, I
C
= 0
V
CE
= - 5V, I
C
= - 10mA
V
CE
= - 1V, I
C
= - 500mA
V
CE
= - 1V, I
C
= - 2A
I
C
= - 2A, I
B
= - 0.2A
V
CE
= - 5V, I
C
= - 10mA
V
CE
= -1 V, I
C
= - 2A
V
CE
= - 1V, I
C
= - 250mA
3
-0.58
- 1.5
20
15
40
40
25
15
140
140
140
140
Min.
-60
-80
- 100
- 100
- 100
- 100
-1
Typ.
Max.
Units
V
V
µA
µA
µA
µA
mA
I
CBO
I
CES
I
EBO
h
FE
V
CE
(sat)
V
BE
(on)
f
T
* Collector-Emitter Saturation Voltage
* Base-Emitter ON Voltage
Current Gain Bandwidth Product
- 0.8
V
V
V
MHz
* Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
BD440/442
Typical Characteristics
1000
-1
100
V
CE
(sat)[V], SATURATION VOLTAGE
V
CE
= -1V
I
C
= 10 I
B
h
FE
, DC CURRENT GAIN
-0.1
10
1
-0.01
-0.1
-1
-10
-0.01
-0.1
-1
-10
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Collector-Emitter Saturation Voltage
-5.0
-4.5
1000
V
CE
= -1V
I
C
[A], COLLECTOR CURRENT
-4.0
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
-0.0
-0.0
C
CBO
(pF), COLLECTOR BASE CAPACITANCE
100
10
-0.3
-0.5
-0.8
-1.0
-1.3
-1.5
-1.8
-2.0
1
-0.1
-1
-10
-100
V
BE
[V], BASE-EMITTER VOLTAGE
V
CB
[V], COLLECTOR BASE VOLTAGE
Figure 3. Base-Emitter On Voltage
Figure 4. Collector-Base Capacitance
48
42
I
C
[A], COLLECTOR CURRENT
I
C
MAX. (Pulsed)
10
ms
1m
s
DC
10
0
µ
s
P
C
[W], POWER DISSIPATION
-10
1
µ
s
10
µ
s
36
I
C
Max. (Continuous)
30
24
-1
18
12
-0.1
-1
-10
BD440
BD442
-100
6
0
0
25
50
o
75
100
125
150
175
200
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
T
C
[ C], CASE TEMPERATURE
Figure 5. Safe Operating Area
Figure 6. Power Derating
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
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E
2
CMOS™
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FACT Quiet Series™
DISCLAIMER
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®
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OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
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®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER
®
SMART START™
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®
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or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
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2. A critical component is any component of a life support
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2001 Fairchild Semiconductor Corporation
Rev. H2
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