SID40N03
Elektronische Bauelemente
36A, 30V,R
DS(ON)
21m
Ω
N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
Description
The SID40N03 provide the designer with the best combination
of fast switching, ruggedized device design, low on-resistance
and cost-effectiveness.
The TO-251 is universally preferred for all commercial-industrial
surface mount applications and
suited for low voltage applications
5.6
±0.2
6.6
±0.2
5.3
±0.2
TO-251
2.3
±0.1
0.5
±0.05
7.0
±0.2
such as DC/DC converters.
7.0
±0.2
1.2
±0.3
0.75
±0.15
Features
* Repetitive Avalanche Rated
* Dynamic dv/dt Rating
0.6
±0.1
2.3
REF.
0.5
±0.1
*
Simple Drive Requirement
*
Fast Switching
G
D
S
Dimensions in millimeters
D
G
Marking Code: 40N03
XXXX(Date Code)
S
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current,V
GS
@10V
Continuous Drain Current,V
GS
@10V
Pulsed Drain Current
1
Symbol
V
DS
V
GS
I
D
@T
C
=25
C
I
D
@T
C
=100
C
I
DM
P
D
@T
C
=25
C
o
o
o
Ratings
30
± 20
36
25
150
50
0.4
Unit
V
V
A
A
A
W
W/ C
o
o
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Tj, Tstg
-55~+150
C
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Symbol
Max.
Max.
Rthj-c
Rthj-a
Ratings
2.5
110
o
o
Unit
C /W
C /W
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Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of
5
SID40N03
Elektronische Bauelemente
36A, 30V,R
DS(ON)
21m
Ω
N-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25 C Unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25
C
)
Drain-Source Leakage Current(Tj=150
C
)
Static Drain-Source On-Resistance
o
o
o
Symbol
BV
DSS
BV
DS
/ Tj
V
GS(th)
I
GSS
I
DSS
Min.
30
_
Typ.
_
Max.
_
Unit
V
V/ C
V
nA
uA
uA
o
Test Condition
V
GS
=0V, I
D
=250uA
Reference to 25 C, I
D
=1mA
V
DS
=V
GS,
I
D
=250uA
V
GS
=
±
20V
V
DS
=30V,V
GS
=0
V
DS
=24V,V
GS
=0
V
GS
=10V, I
D
=18A
V
GS
=4.5V, I
D
=14A
o
0.037
_
_
_
_
_
1.0
_
_
_
_
3.0
±
100
25
250
21
30
_
_
_
R
D S (O N )
Qg
Qgs
Qgd
Td
(ON)
Tr
Td
(Off)
Tf
Ciss
Coss
Crss
Gfs
18
24
17
3
10
7.2
60
22.5
10
800
380
133
26
_
_
_
_
_
_
_
_
_
_
_
m
Ω
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Forward Transconductance
nC
I
D
=18A
V
DS
=24V
V
GS
= 5V
_
_
_
_
V
DD
=15V
I
D
=18A
nS
V
GS
=10V
R
G
=3.3
Ω
R
D
=0.83
Ω
_
_
_
pF
V
GS
=0V
V
DS
=25V
f=1.0MHz
_
_
S
V
DS
=10V, I
D
=18A
Source-Drain Diode
Parameter
Forward On Voltage
2
Continuous Source Current(Body Diode)
Pulsed Source Current(Body Diode)
1
Symbol
V
SD
I
S
Min.
_
_
Typ.
_
_
_
Max.
1.3
Unit
V
A
A
Test Condition
I
S
=36 A, V
GS
=0V.Tj=25C
V
D
=V
G
=0V,V
S
=1.3 V
o
36
150
I
SM
_
Notes: 1.Pulse width limited by safe operating area.
2. Pulse width
≦
300us, dutycycle
≦
2%.
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 2 of
5
SID40N03
Elektronische Bauelemente
36A, 30V,R
DS(ON)
21m
Ω
N-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Maximum Drain Current
v.s. Case Temperature
http://www.SeCoSGmbH.com/
Fig 6. Type Power Dissipation
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page
3
of
5
SID40N03
Elektronische Bauelemente
36A, 30V,R
DS(ON)
21m
Ω
N-Channel Enhancement Mode Power Mos.FET
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
Fig 11. Forward Characteristics of
Reverse Diode
http://www.SeCoSGmbH.com/
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page
4
of
5
SID40N03
Elektronische Bauelemente
36A, 30V,R
DS(ON)
21m
Ω
N-Channel Enhancement Mode Power Mos.FET
Fig 13. Switching Time Circuit
Fig 14. Switching Time Waveform
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
http://www.SeCoSGmbH.com/
01
-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page
5
of
5
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